CMOS Mean Free Path Solution

STEP 0: Pre-Calculation Summary
Formula Used
Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
L = Vc/Ec
This formula uses 3 Variables
Variables Used
Mean Free Path - (Measured in Meter) - Mean Free Path is defined as the average distance travelled by a moving particle between successive impacts, which modifies its direction or energy or other particle properties.
Critical Voltage in CMOS - (Measured in Volt) - Critical Voltage in CMOS is the minimum phase to the neutral voltage which glows and appears all along the line conductor.
Critical Electric Field - (Measured in Volt per Meter) - Critical Electric Field is defined as the electric force per unit charge.
STEP 1: Convert Input(s) to Base Unit
Critical Voltage in CMOS: 2.79 Volt --> 2.79 Volt No Conversion Required
Critical Electric Field: 0.004 Volt per Millimeter --> 4 Volt per Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
L = Vc/Ec --> 2.79/4
Evaluating ... ...
L = 0.6975
STEP 3: Convert Result to Output's Unit
0.6975 Meter -->697.5 Millimeter (Check conversion ​here)
FINAL ANSWER
697.5 Millimeter <-- Mean Free Path
(Calculation completed in 00.004 seconds)

Credits

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Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 900+ more calculators!
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Verified by Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
​ Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
​ Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
​ Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
​ Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
​ Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
​ Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
​ Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
​ Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
​ Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
​ Go PN Junction Length = Depletion Region Width+Effective Channel Length
Voltage at Minimum EDP
​ Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
​ Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
CMOS Mean Free Path
​ Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Width of Source Diffusion
​ Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
​ Go Area of Source Diffusion = Length of Source*Transition Width

CMOS Mean Free Path Formula

Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
L = Vc/Ec

What are the effects of temperature on reverse saturation current and barrier voltage?

Temperature has a significant impact on the reverse saturation current and barrier voltage in thin film transistors. An increase in temperature typically Result in an increase in reverse saturation current and a decrease in barrier voltage. This is because higher temperatures lead to increased gas kinetic energy, which can facilitate the injection of charge carriers into the depletion region of the transistor.

How to Calculate CMOS Mean Free Path?

CMOS Mean Free Path calculator uses Mean Free Path = Critical Voltage in CMOS/Critical Electric Field to calculate the Mean Free Path, CMOS Mean Free Path refers to the average distance that free charge carriers (electrons or holes) can travel in a semiconductor material without colliding with each other or with the surrounding lattice atoms. Mean Free Path is denoted by L symbol.

How to calculate CMOS Mean Free Path using this online calculator? To use this online calculator for CMOS Mean Free Path, enter Critical Voltage in CMOS (Vc) & Critical Electric Field (Ec) and hit the calculate button. Here is how the CMOS Mean Free Path calculation can be explained with given input values -> 697500 = 2.79/4.

FAQ

What is CMOS Mean Free Path?
CMOS Mean Free Path refers to the average distance that free charge carriers (electrons or holes) can travel in a semiconductor material without colliding with each other or with the surrounding lattice atoms and is represented as L = Vc/Ec or Mean Free Path = Critical Voltage in CMOS/Critical Electric Field. Critical Voltage in CMOS is the minimum phase to the neutral voltage which glows and appears all along the line conductor & Critical Electric Field is defined as the electric force per unit charge.
How to calculate CMOS Mean Free Path?
CMOS Mean Free Path refers to the average distance that free charge carriers (electrons or holes) can travel in a semiconductor material without colliding with each other or with the surrounding lattice atoms is calculated using Mean Free Path = Critical Voltage in CMOS/Critical Electric Field. To calculate CMOS Mean Free Path, you need Critical Voltage in CMOS (Vc) & Critical Electric Field (Ec). With our tool, you need to enter the respective value for Critical Voltage in CMOS & Critical Electric Field and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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