Channel Width after Full Scaling VLSI Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure.ⓘ Channel Width [W_c]			+10% -10%
✖Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.ⓘ Scaling Factor [Sf]			+10% -10%

✖Channel Width after Full Scaling is defined as the width of the channel after reducing the dimensions of transistors by keeping electric field constant.ⓘ Channel Width after Full Scaling VLSI [W_c']

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Formula

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Channel Width after Full Scaling VLSI

Formula

`("W"_{"c"}"'") = "W"_{"c"}/"Sf"`

Example

`"1.666667μm"="2.5μm"/"1.5"`

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Channel Width after Full Scaling VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Channel Width after Full Scaling = Channel Width/Scaling Factor
W_c' = W_c/Sf
This formula uses 3 Variables

Variables Used

Channel Width after Full Scaling - (Measured in Meter) - Channel Width after Full Scaling is defined as the width of the channel after reducing the dimensions of transistors by keeping electric field constant.
Channel Width - (Measured in Meter) - Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

STEP 1: Convert Input(s) to Base Unit

Channel Width: 2.5 Micrometer --> 2.5E-06 Meter (Check conversion here)
Scaling Factor: 1.5 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

W_c' = W_c/Sf --> 2.5E-06/1.5

Evaluating ... ...

W_c' = 1.66666666666667E-06

STEP 3: Convert Result to Output's Unit

1.66666666666667E-06 Meter -->1.66666666666667 Micrometer (Check conversion here)

FINAL ANSWER

1.66666666666667 ≈ 1.666667 Micrometer <-- Channel Width after Full Scaling

(Calculation completed in 00.004 seconds)

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Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

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< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

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Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Channel Width after Full Scaling VLSI Formula

Channel Width after Full Scaling = Channel Width/Scaling Factor
W_c' = W_c/Sf

What factors influence the decision to scale the channel width?

Designers consider factors such as power consumption, transistor speed, and chip area when deciding whether to scale the channel width. The goal is to optimize performance while meeting design constraints.

How to Calculate Channel Width after Full Scaling VLSI?

Channel Width after Full Scaling VLSI calculator uses Channel Width after Full Scaling = Channel Width/Scaling Factor to calculate the Channel Width after Full Scaling, The Channel Width after Full Scaling VLSI formula is defined as the width of the channel after reducing the dimensions of transistors by keeping electric field constant. Channel Width after Full Scaling is denoted by W_c' symbol.

How to calculate Channel Width after Full Scaling VLSI using this online calculator? To use this online calculator for Channel Width after Full Scaling VLSI, enter Channel Width (W_c) & Scaling Factor (Sf) and hit the calculate button. Here is how the Channel Width after Full Scaling VLSI calculation can be explained with given input values -> 1.7E+12 = 2.5E-06/1.5.

FAQ

What is Channel Width after Full Scaling VLSI?

The Channel Width after Full Scaling VLSI formula is defined as the width of the channel after reducing the dimensions of transistors by keeping electric field constant and is represented as W_c' = W_c/Sf or Channel Width after Full Scaling = Channel Width/Scaling Factor. Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure & Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

How to calculate Channel Width after Full Scaling VLSI?

The Channel Width after Full Scaling VLSI formula is defined as the width of the channel after reducing the dimensions of transistors by keeping electric field constant is calculated using Channel Width after Full Scaling = Channel Width/Scaling Factor. To calculate Channel Width after Full Scaling VLSI, you need Channel Width (W_c) & Scaling Factor (Sf). With our tool, you need to enter the respective value for Channel Width & Scaling Factor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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