Collector-Current of PNP Transistor Calculator

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✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]			+10% -10%
✖Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.ⓘ Emitter Base Junction Area [A]			+10% -10%
✖Equilibrium Concentration of N-Type is equal to the density of donor atoms because the electrons for conduction are solely given by the donor atom.ⓘ Equilibrium Concentration of N-Type [N_d]			+10% -10%
✖Diffusion Constant For PNP describes how easily these minority carriers diffuse through the semiconductor material when an electric field is applied.ⓘ Diffusion Constant For PNP [D_p]			+10% -10%
✖The base width is an important parameter affecting the transistor's characteristics, especially in terms of its operation and speed.ⓘ Base Width [W_b]			+10% -10%

✖Collector current is the current that flows through the collector terminal of the transistor and is the current that is being amplified by the transistor.ⓘ Collector-Current of PNP Transistor [I_c]

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Formula

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Collector-Current of PNP Transistor

Formula

`"I"_{"c"} = ("q"*"A"*"N"_{"d"}*"D"_{"p"})/"W"_{"b"}`

Example

`"4.921875A"=("5mC"*"1.75cm²"*"45/cm³"*"100cm²/s")/"8cm"`

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Collector-Current of PNP Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width
I_c = (q*A*N_d*D_p)/W_b
This formula uses 6 Variables

Variables Used

Collector Current - (Measured in Ampere) - Collector current is the current that flows through the collector terminal of the transistor and is the current that is being amplified by the transistor.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Emitter Base Junction Area - (Measured in Square Meter) - Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.
Equilibrium Concentration of N-Type - (Measured in 1 per Cubic Meter) - Equilibrium Concentration of N-Type is equal to the density of donor atoms because the electrons for conduction are solely given by the donor atom.
Diffusion Constant For PNP - (Measured in Square Meter Per Second) - Diffusion Constant For PNP describes how easily these minority carriers diffuse through the semiconductor material when an electric field is applied.
Base Width - (Measured in Meter) - The base width is an important parameter affecting the transistor's characteristics, especially in terms of its operation and speed.

STEP 1: Convert Input(s) to Base Unit

Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Emitter Base Junction Area: 1.75 Square Centimeter --> 0.000175 Square Meter (Check conversion here)
Equilibrium Concentration of N-Type: 45 1 per Cubic Centimeter --> 45000000 1 per Cubic Meter (Check conversion here)
Diffusion Constant For PNP: 100 Square Centimeter Per Second --> 0.01 Square Meter Per Second (Check conversion here)
Base Width: 8 Centimeter --> 0.08 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_c = (q*A*N_d*D_p)/W_b --> (0.005*0.000175*45000000*0.01)/0.08

Evaluating ... ...

I_c = 4.921875

STEP 3: Convert Result to Output's Unit

4.921875 Ampere --> No Conversion Required

FINAL ANSWER

4.921875 Ampere <-- Collector Current

(Calculation completed in 00.020 seconds)

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Credits

Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

Rahul Gupta has created this Calculator and 25+ more calculators!

Verified by Ritwik Tripathi

Vellore Institute of Technology (VIT Vellore), Vellore

Ritwik Tripathi has verified this Calculator and 100+ more calculators!

< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Collector-Current of PNP Transistor Formula

Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width
I_c = (q*A*N_d*D_p)/W_b

How does the collector current change with an increase in base current in a PNP transistor?

Assuming the transistor is operating within its active region, an increase in the base current in a PNP transistor leads to a proportionate increase in the collector current. This relationship is defined by the current gain of the transistor.

How to Calculate Collector-Current of PNP Transistor?

Collector-Current of PNP Transistor calculator uses Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width to calculate the Collector Current, The Collector-Current of PNP Transistor formula is defined as parameter in the operation of a transistor and is used to analyze and design transistor circuits. The current gain of a transistor is specified in its datasheet and can vary depending on the specific transistor model and operating various factors, such as the input biasing, load resistance, and the transistor's characteristics, impact the collector current. Collector Current is denoted by I_c symbol.

How to calculate Collector-Current of PNP Transistor using this online calculator? To use this online calculator for Collector-Current of PNP Transistor, enter Charge (q), Emitter Base Junction Area (A), Equilibrium Concentration of N-Type (N_d), Diffusion Constant For PNP (D_p) & Base Width (W_b) and hit the calculate button. Here is how the Collector-Current of PNP Transistor calculation can be explained with given input values -> 4.921875 = (0.005*0.000175*45000000*0.01)/0.08.

FAQ

What is Collector-Current of PNP Transistor?

The Collector-Current of PNP Transistor formula is defined as parameter in the operation of a transistor and is used to analyze and design transistor circuits. The current gain of a transistor is specified in its datasheet and can vary depending on the specific transistor model and operating various factors, such as the input biasing, load resistance, and the transistor's characteristics, impact the collector current and is represented as I_c = (q*A*N_d*D_p)/W_b or Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width. Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor, Equilibrium Concentration of N-Type is equal to the density of donor atoms because the electrons for conduction are solely given by the donor atom, Diffusion Constant For PNP describes how easily these minority carriers diffuse through the semiconductor material when an electric field is applied & The base width is an important parameter affecting the transistor's characteristics, especially in terms of its operation and speed.

How to calculate Collector-Current of PNP Transistor?

The Collector-Current of PNP Transistor formula is defined as parameter in the operation of a transistor and is used to analyze and design transistor circuits. The current gain of a transistor is specified in its datasheet and can vary depending on the specific transistor model and operating various factors, such as the input biasing, load resistance, and the transistor's characteristics, impact the collector current is calculated using Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width. To calculate Collector-Current of PNP Transistor, you need Charge (q), Emitter Base Junction Area (A), Equilibrium Concentration of N-Type (N_d), Diffusion Constant For PNP (D_p) & Base Width (W_b). With our tool, you need to enter the respective value for Charge, Emitter Base Junction Area, Equilibrium Concentration of N-Type, Diffusion Constant For PNP & Base Width and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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