Conductivity of Extrinsic Semiconductors for N-type Calculator

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✖Donor concentration is the concentration of electrons in the donor state.ⓘ Donor Concentration [N_d]			+10% -10%
✖Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.ⓘ Mobility of Electron [μ_n]			+10% -10%

✖Conductivity of extrinsic semiconductors (n-type) is the measure of the ease at which an electric charge or heat can pass through an extrinsic semiconductor material of n-type.ⓘ Conductivity of Extrinsic Semiconductors for N-type [σ_n]

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Conductivity of Extrinsic Semiconductors for N-type

Formula

`"σ"_{"n"} = "N"_{"d"}*"[Charge-e]"*"μ"_{"n"}`

Example

`"5.767836S/m"="2e17/m³"*"[Charge-e]"*"180m²/V*s"`

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Conductivity of Extrinsic Semiconductors for N-type Solution

STEP 0: Pre-Calculation Summary

Formula Used

Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron
σ_n = N_d*[Charge-e]*μ_n
This formula uses 1 Constants, 3 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Conductivity of Extrinsic Semiconductors (n-type) - (Measured in Siemens per Meter) - Conductivity of extrinsic semiconductors (n-type) is the measure of the ease at which an electric charge or heat can pass through an extrinsic semiconductor material of n-type.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration is the concentration of electrons in the donor state.
Mobility of Electron - (Measured in Square Meter per Volt per Second) - Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.

STEP 1: Convert Input(s) to Base Unit

Donor Concentration: 2E+17 1 per Cubic Meter --> 2E+17 1 per Cubic Meter No Conversion Required
Mobility of Electron: 180 Square Meter per Volt per Second --> 180 Square Meter per Volt per Second No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

σ_n = N_d*[Charge-e]*μ_n --> 2E+17*[Charge-e]*180

Evaluating ... ...

σ_n = 5.767835832

STEP 3: Convert Result to Output's Unit

5.767835832 Siemens per Meter --> No Conversion Required

FINAL ANSWER

5.767835832 ≈ 5.767836 Siemens per Meter <-- Conductivity of Extrinsic Semiconductors (n-type)

(Calculation completed in 00.004 seconds)

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< 13 Semiconductor Characteristics Calculators

Conductivity in Semiconductors

Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)

Fermi Dirac Distribution Function

Go Fermi Dirac Distribution Function = 1/(1+e^((Fermi Level Energy-Fermi Level Energy)/([BoltZ]*Temperature)))

Conductivity of Extrinsic Semiconductors for N-type

Go Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron

Conductivity of Extrinsic Semiconductor for P-Type

Go Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes

Electron Diffusion Length

Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)

Energy Band Gap

Go Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant)

Majority Carrier Concentration in Semiconductor for p-type

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Majority Carrier Concentration in Semiconductor

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Fermi Level of Intrinsic Semiconductors

Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2

Drift Current Density

Go Drift Current Density = Holes Current Density+Electron Current Density

Mobility of Charge Carriers

Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity

Saturation Voltage using Threshold Voltage

Go Saturation Voltage = Gate Source Voltage-Threshold Voltage

Electric Field due to Hall Voltage

Go Hall Electric Field = Hall Voltage/Conductor Width

Conductivity of Extrinsic Semiconductors for N-type Formula

Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron
σ_n = N_d*[Charge-e]*μ_n

What are extrinsic semiconductors?

Extrinsic semiconductors are just intrinsic semiconductors that have been doped with impurity atoms (one dimensional substitutional defects in this case). Doping is the process where semiconductors increase their electrical conductivity by introducing atoms of different elements into their lattice.

What is n-type extrinsic semiconductor?

An n-type semiconductor is created when pure semiconductors, like Si and Ge, are doped with pentavalent elements. when a semiconductor is doped with a pentavalent atom, electrons are the majority charge carriers. On the other hand, the holes are the minority charge carriers. Therefore, such extrinsic semiconductors are called n-type semiconductors. In an n-type semiconductor,
Number of free electrons >> Number of holes

How to Calculate Conductivity of Extrinsic Semiconductors for N-type?

Conductivity of Extrinsic Semiconductors for N-type calculator uses Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron to calculate the Conductivity of Extrinsic Semiconductors (n-type), Conductivity of Extrinsic Semiconductors for N-type is the measure of an electric charge which can pass through an extrinsic semiconductor material of n-type. Conductivity of Extrinsic Semiconductors (n-type) is denoted by σ_n symbol.

How to calculate Conductivity of Extrinsic Semiconductors for N-type using this online calculator? To use this online calculator for Conductivity of Extrinsic Semiconductors for N-type, enter Donor Concentration (N_d) & Mobility of Electron (μ_n) and hit the calculate button. Here is how the Conductivity of Extrinsic Semiconductors for N-type calculation can be explained with given input values -> 5.767836 = 2E+17*[Charge-e]*180.

FAQ

What is Conductivity of Extrinsic Semiconductors for N-type?

Conductivity of Extrinsic Semiconductors for N-type is the measure of an electric charge which can pass through an extrinsic semiconductor material of n-type and is represented as σ_n = N_d*[Charge-e]*μ_n or Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron. Donor concentration is the concentration of electrons in the donor state & Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.

How to calculate Conductivity of Extrinsic Semiconductors for N-type?

Conductivity of Extrinsic Semiconductors for N-type is the measure of an electric charge which can pass through an extrinsic semiconductor material of n-type is calculated using Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron. To calculate Conductivity of Extrinsic Semiconductors for N-type, you need Donor Concentration (N_d) & Mobility of Electron (μ_n). With our tool, you need to enter the respective value for Donor Concentration & Mobility of Electron and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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