Conductivity of Extrinsic Semiconductor for P-Type Calculator

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Semiconductor Characteristics

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✖Acceptor concentration is the concentration of holes in acceptor state.ⓘ Acceptor Concentration [N_a]			+10% -10%
✖Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.ⓘ Mobility of Holes [μ_p]			+10% -10%

✖Conductivity of extrinsic semiconductors (p-type) is the measure of the ease at which an electric charge or heat can pass through an extrinsic semiconductor material of p-type.ⓘ Conductivity of Extrinsic Semiconductor for P-Type [σ_p]

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Conductivity of Extrinsic Semiconductor for P-Type

Formula

`"σ"_{"p"} = "N"_{"a"}*"[Charge-e]"*"μ"_{"p"}`

Example

`"0.240326S/m"="1e16/m³"*"[Charge-e]"*"150m²/V*s"`

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Conductivity of Extrinsic Semiconductor for P-Type Solution

STEP 0: Pre-Calculation Summary

Formula Used

Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes
σ_p = N_a*[Charge-e]*μ_p
This formula uses 1 Constants, 3 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Conductivity of Extrinsic Semiconductors (p-type) - (Measured in Siemens per Meter) - Conductivity of extrinsic semiconductors (p-type) is the measure of the ease at which an electric charge or heat can pass through an extrinsic semiconductor material of p-type.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor concentration is the concentration of holes in acceptor state.
Mobility of Holes - (Measured in Square Meter per Volt per Second) - Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.

STEP 1: Convert Input(s) to Base Unit

Acceptor Concentration: 1E+16 1 per Cubic Meter --> 1E+16 1 per Cubic Meter No Conversion Required
Mobility of Holes: 150 Square Meter per Volt per Second --> 150 Square Meter per Volt per Second No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

σ_p = N_a*[Charge-e]*μ_p --> 1E+16*[Charge-e]*150

Evaluating ... ...

σ_p = 0.240326493

STEP 3: Convert Result to Output's Unit

0.240326493 Siemens per Meter --> No Conversion Required

FINAL ANSWER

0.240326493 ≈ 0.240326 Siemens per Meter <-- Conductivity of Extrinsic Semiconductors (p-type)

(Calculation completed in 00.004 seconds)

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< 13 Semiconductor Characteristics Calculators

Conductivity in Semiconductors

Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)

Fermi Dirac Distribution Function

Go Fermi Dirac Distribution Function = 1/(1+e^((Fermi Level Energy-Fermi Level Energy)/([BoltZ]*Temperature)))

Conductivity of Extrinsic Semiconductors for N-type

Go Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron

Conductivity of Extrinsic Semiconductor for P-Type

Go Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes

Electron Diffusion Length

Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)

Energy Band Gap

Go Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant)

Majority Carrier Concentration in Semiconductor for p-type

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Majority Carrier Concentration in Semiconductor

Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration

Fermi Level of Intrinsic Semiconductors

Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2

Drift Current Density

Go Drift Current Density = Holes Current Density+Electron Current Density

Mobility of Charge Carriers

Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity

Saturation Voltage using Threshold Voltage

Go Saturation Voltage = Gate Source Voltage-Threshold Voltage

Electric Field due to Hall Voltage

Go Hall Electric Field = Hall Voltage/Conductor Width

Conductivity of Extrinsic Semiconductor for P-Type Formula

Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes
σ_p = N_a*[Charge-e]*μ_p

Explain conductivity in semiconductors.

Semiconductors are semi-good electrical conductors because although their valence band is completely filled, the energy gap between the valance band and the conduction band is not too large. Hence some electrons can bridge it to become charge carriers. The difference between semiconductors and an insulator is the magnitude of the energy gap. For semiconductors Eg < 2eV and for Insulators Eg > 2eV.It is well known to us that the conductivity of a semiconductor depends on the concentration of free electrons in it

How to Calculate Conductivity of Extrinsic Semiconductor for P-Type?

Conductivity of Extrinsic Semiconductor for P-Type calculator uses Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes to calculate the Conductivity of Extrinsic Semiconductors (p-type), The Conductivity of extrinsic semiconductor for p-type formula is defined as the conduction band electron, and valance band hole participates in electrical conduction. Conductivity of Extrinsic Semiconductors (p-type) is denoted by σ_p symbol.

How to calculate Conductivity of Extrinsic Semiconductor for P-Type using this online calculator? To use this online calculator for Conductivity of Extrinsic Semiconductor for P-Type, enter Acceptor Concentration (N_a) & Mobility of Holes (μ_p) and hit the calculate button. Here is how the Conductivity of Extrinsic Semiconductor for P-Type calculation can be explained with given input values -> 0.240326 = 1E+16*[Charge-e]*150.

FAQ

What is Conductivity of Extrinsic Semiconductor for P-Type?

The Conductivity of extrinsic semiconductor for p-type formula is defined as the conduction band electron, and valance band hole participates in electrical conduction and is represented as σ_p = N_a*[Charge-e]*μ_p or Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes. Acceptor concentration is the concentration of holes in acceptor state & Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.

How to calculate Conductivity of Extrinsic Semiconductor for P-Type?

The Conductivity of extrinsic semiconductor for p-type formula is defined as the conduction band electron, and valance band hole participates in electrical conduction is calculated using Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes. To calculate Conductivity of Extrinsic Semiconductor for P-Type, you need Acceptor Concentration (N_a) & Mobility of Holes (μ_p). With our tool, you need to enter the respective value for Acceptor Concentration & Mobility of Holes and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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