Critical Electric Field Solution

STEP 0: Pre-Calculation Summary
Formula Used
Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Ec = (2*Vsat)/µe
This formula uses 3 Variables
Variables Used
Critical Electric Field - (Measured in Volt per Meter) - Critical Electric Field is defined as the electric force per unit charge.
Velocity Saturation - (Measured in Meter per Second) - velocity Saturation is the phenomenon where carriers approach a maximum velocity vsat when high fields are applied.
Mobility of Electron - (Measured in Square Meter per Volt per Second) - Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
STEP 1: Convert Input(s) to Base Unit
Velocity Saturation: 10.12 Millimeter per Second --> 0.01012 Meter per Second (Check conversion here)
Mobility of Electron: 49.8 Square Centimeter per Volt Second --> 0.00498 Square Meter per Volt per Second (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ec = (2*Vsat)/µe --> (2*0.01012)/0.00498
Evaluating ... ...
Ec = 4.06425702811245
STEP 3: Convert Result to Output's Unit
4.06425702811245 Volt per Meter -->0.00406425702811245 Volt per Millimeter (Check conversion here)
FINAL ANSWER
0.00406425702811245 0.004064 Volt per Millimeter <-- Critical Electric Field
(Calculation completed in 00.004 seconds)

Credits

Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
Go PN Junction Length = Depletion Region Width+Effective Channel Length
CMOS Mean Free Path
Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Voltage at Minimum EDP
Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
Width of Source Diffusion
Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
Go Area of Source Diffusion = Length of Source*Transition Width

Critical Electric Field Formula

Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Ec = (2*Vsat)/µe

What is velocity saturation?

Velocity saturation is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation.

How to Calculate Critical Electric Field?

Critical Electric Field calculator uses Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron to calculate the Critical Electric Field, The Critical Electric Field CMOS formula is defined as the electric field at which the velocity of carrier saturates. The loss of energy is because of the collisions of carriers called as scattering effect. Critical Electric Field is denoted by Ec symbol.

How to calculate Critical Electric Field using this online calculator? To use this online calculator for Critical Electric Field, enter Velocity Saturation (Vsat) & Mobility of Electron e) and hit the calculate button. Here is how the Critical Electric Field calculation can be explained with given input values -> 4.1E-6 = (2*0.01012)/0.00498.

FAQ

What is Critical Electric Field?
The Critical Electric Field CMOS formula is defined as the electric field at which the velocity of carrier saturates. The loss of energy is because of the collisions of carriers called as scattering effect and is represented as Ec = (2*Vsat)/µe or Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron. velocity Saturation is the phenomenon where carriers approach a maximum velocity vsat when high fields are applied & Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
How to calculate Critical Electric Field?
The Critical Electric Field CMOS formula is defined as the electric field at which the velocity of carrier saturates. The loss of energy is because of the collisions of carriers called as scattering effect is calculated using Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron. To calculate Critical Electric Field, you need Velocity Saturation (Vsat) & Mobility of Electron e). With our tool, you need to enter the respective value for Velocity Saturation & Mobility of Electron and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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