🔍
🔍

## Credits

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 500+ more calculators!
Vishwakarma Government Engineering College (VGEC), Ahmedabad
Urvi Rathod has verified this Calculator and 1000+ more calculators!

## Critical Electric Field CMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
critical_electric_field = (2*critical voltage)/Mobility of electron
Ec = (2*Vc)/µn
This formula uses 2 Variables
Variables Used
critical voltage - critical voltage the minimum phase to the neutral voltage which glows and appears all along the line conductor (Measured in Volt)
Mobility of electron - Mobility of electron is defined as the magnitude of average drift velocity per unit electric field. (Measured in Meter² per Volt Second)
STEP 1: Convert Input(s) to Base Unit
critical voltage: 3 Volt --> 3 Volt No Conversion Required
Mobility of electron: 100 Meter² per Volt Second --> 100 Meter² per Volt Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ec = (2*Vc)/µn --> (2*3)/100
Evaluating ... ...
Ec = 0.06
STEP 3: Convert Result to Output's Unit
0.06 Volt per Meter --> No Conversion Required
FINAL ANSWER
0.06 Volt per Meter <-- critical electric field
(Calculation completed in 00.016 seconds)

## < 10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

### Critical Electric Field CMOS Formula

critical_electric_field = (2*critical voltage)/Mobility of electron
Ec = (2*Vc)/µn

## What is transistor?

In electronics, a transistor is a semiconductor device commonly used to amplify or switch electronic signals. The transistor is the fundamental building block of computers, and all other modern electronic devices. Some transistors are packaged individually but most are found in integrated circuits.

## How to Calculate Critical Electric Field CMOS?

Critical Electric Field CMOS calculator uses critical_electric_field = (2*critical voltage)/Mobility of electron to calculate the critical electric field, The Critical Electric Field CMOS formula is defined as the electric force per unit charge. The direction of the field is taken to be the direction of the force it would exert on a positive test charge. critical electric field and is denoted by Ec symbol.

How to calculate Critical Electric Field CMOS using this online calculator? To use this online calculator for Critical Electric Field CMOS, enter critical voltage (Vc) and Mobility of electron n) and hit the calculate button. Here is how the Critical Electric Field CMOS calculation can be explained with given input values -> 0.06 = (2*3)/100.

### FAQ

What is Critical Electric Field CMOS?
The Critical Electric Field CMOS formula is defined as the electric force per unit charge. The direction of the field is taken to be the direction of the force it would exert on a positive test charge and is represented as Ec = (2*Vc)/µn or critical_electric_field = (2*critical voltage)/Mobility of electron. critical voltage the minimum phase to the neutral voltage which glows and appears all along the line conductor and Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
How to calculate Critical Electric Field CMOS?
The Critical Electric Field CMOS formula is defined as the electric force per unit charge. The direction of the field is taken to be the direction of the force it would exert on a positive test charge is calculated using critical_electric_field = (2*critical voltage)/Mobility of electron. To calculate Critical Electric Field CMOS, you need critical voltage (Vc) and Mobility of electron n). With our tool, you need to enter the respective value for critical voltage and Mobility of electron and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate critical electric field?
In this formula, critical electric field uses critical voltage and Mobility of electron. We can use 10 other way(s) to calculate the same, which is/are as follows -
• dynamic_power = Drain Voltage^2*frequency*Capacitance
• drain_voltage = sqrt(dynamic power/frequency*Capacitance)
• static_power = static current*Drain Voltage
• static_current = Static power/Drain Voltage
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
• threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
• potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
• potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Critical Electric Field CMOS calculator used?
Among many, Critical Electric Field CMOS calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList} Let Others Know
LinkedIn
Email
WhatsApp
Copied!