Cross-Sectional Area of Junction Calculator

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SSD Junction

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✖Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.ⓘ Total Acceptor Charge [\|Q\|]			+10% -10%
✖Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.ⓘ Charge Penetration N-type [x_no]			+10% -10%
✖Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.ⓘ Acceptor Concentration [N_a]			+10% -10%

✖The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.ⓘ Cross-Sectional Area of Junction [A_j]

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Cross-Sectional Area of Junction

Formula

`"A"_{"j"} = "|Q|"/("[Charge-e]"*"x"_{"no"}*"N"_{"a"})`

Example

`"5405.704µm²"="13C"/("[Charge-e]"*"0.019μm"*"7.9e35/m³")`

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Cross-Sectional Area of Junction Solution

STEP 0: Pre-Calculation Summary

Formula Used

Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration)
A_j = |Q|/([Charge-e]*x_no*N_a)
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Junction Area - (Measured in Square Meter) - The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.
Total Acceptor Charge - (Measured in Coulomb) - Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.
Charge Penetration N-type - (Measured in Meter) - Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.

STEP 1: Convert Input(s) to Base Unit

Total Acceptor Charge: 13 Coulomb --> 13 Coulomb No Conversion Required
Charge Penetration N-type: 0.019 Micrometer --> 1.9E-08 Meter (Check conversion here)
Acceptor Concentration: 7.9E+35 1 per Cubic Meter --> 7.9E+35 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

A_j = |Q|/([Charge-e]*x_no*N_a) --> 13/([Charge-e]*1.9E-08*7.9E+35)

Evaluating ... ...

A_j = 5.40570410906043E-09

STEP 3: Convert Result to Output's Unit

5.40570410906043E-09 Square Meter -->5405.70410906043 Square Micrometer (Check conversion here)

FINAL ANSWER

5405.70410906043 ≈ 5405.704 Square Micrometer <-- Junction Area

(Calculation completed in 00.004 seconds)

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< 16 SSD Junction Calculators

Junction Capacitance

Go Junction Capacitance = (Junction Area/2)*sqrt((2*[Charge-e]*Constant Length Offset*Doping Concentration of Base)/(Source Voltage-Source Voltage 1))

Length of P-Side Junction

Go Length of P-Side Junction = (Optical Current/([Charge-e]*Junction Area*Optical Generation Rate))-(Junction Transition Width+Diffusion Length of Transition Region)

Junction Transition Width

Go Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration)

Series Resistance in P-type

Go Series Resistance in P Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in N Junction

Series Resistance in N-type

Go Series Resistance in N Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in P Junction

Junction Voltage

Go Junction Voltage = Source Voltage-(Series Resistance in P Junction+Series Resistance in N Junction)*Electric Current

Cross-Sectional Area of Junction

Go Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration)

Acceptor Concentration

Go Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)

N-Type Width

Go Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])

Total Acceptor Charge

Go Total Acceptor Charge = [Charge-e]*Charge Penetration N-type*Junction Area*Acceptor Concentration

Donor Concentration

Go Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area)

Absorption Coefficient

Go Absorption Coefficient = (-1/Sample Thickness)*ln(Absorbed Power/Incident Power)

Absorbed Power

Go Absorbed Power = Incident Power*exp(-Sample Thickness*Absorption Coefficient)

Net Distribution of Charge

Go Net Distribution = (Donor Concentration-Acceptor Concentration)/Graded Constant

P-N Junction Length

Go Junction Length = Constant Length Offset+Effective Channel Length

Quantum Number

Go Quantum Number = [Coulomb]*Potential Well Length/3.14

Cross-Sectional Area of Junction Formula

Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration)
A_j = |Q|/([Charge-e]*x_no*N_a)

How is a semiconductor junction formed?

P-n junctions are formed by joining n-type and p-type semiconductor materials, as shown below. ... However, in a p-n junction, when the electrons and holes move to the other side of the junction, they leave behind exposed charges on dopant atom sites, which are fixed in the crystal lattice and are unable to move.

How to Calculate Cross-Sectional Area of Junction?

Cross-Sectional Area of Junction calculator uses Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration) to calculate the Junction Area, The Cross-Sectional Area of Junction formula is defined as the area of a two-dimensional shape that is obtained when a three-dimensional object - such as a cylinder - is sliced perpendicular to some specified axis at a point. Junction Area is denoted by A_j symbol.

How to calculate Cross-Sectional Area of Junction using this online calculator? To use this online calculator for Cross-Sectional Area of Junction, enter Total Acceptor Charge (|Q|), Charge Penetration N-type (x_no) & Acceptor Concentration (N_a) and hit the calculate button. Here is how the Cross-Sectional Area of Junction calculation can be explained with given input values -> 5.4E+15 = 13/([Charge-e]*1.9E-08*7.9E+35).

FAQ

What is Cross-Sectional Area of Junction?

The Cross-Sectional Area of Junction formula is defined as the area of a two-dimensional shape that is obtained when a three-dimensional object - such as a cylinder - is sliced perpendicular to some specified axis at a point and is represented as A_j = |Q|/([Charge-e]*x_no*N_a) or Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration). Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device, Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material & Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.

How to calculate Cross-Sectional Area of Junction?

The Cross-Sectional Area of Junction formula is defined as the area of a two-dimensional shape that is obtained when a three-dimensional object - such as a cylinder - is sliced perpendicular to some specified axis at a point is calculated using Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration). To calculate Cross-Sectional Area of Junction, you need Total Acceptor Charge (|Q|), Charge Penetration N-type (x_no) & Acceptor Concentration (N_a). With our tool, you need to enter the respective value for Total Acceptor Charge, Charge Penetration N-type & Acceptor Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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