Drain Current after Full Scaling VLSI Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal.ⓘ Drain Current [I_D]			+10% -10%
✖Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.ⓘ Scaling Factor [Sf]			+10% -10%

✖Drain Current after Full Scaling is defined as a drain current value after reduction in dimensions of MOSFET by full scaling.ⓘ Drain Current after Full Scaling VLSI [I_D']

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Formula

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Drain Current after Full Scaling VLSI

Formula

`("I"_{"D"}"'") = "I"_{"D"}/"Sf"`

Example

`"0.710667mA"="1.066mA"/"1.5"`

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Drain Current after Full Scaling VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current after Full Scaling = Drain Current/Scaling Factor
I_D' = I_D/Sf
This formula uses 3 Variables

Variables Used

Drain Current after Full Scaling - (Measured in Ampere) - Drain Current after Full Scaling is defined as a drain current value after reduction in dimensions of MOSFET by full scaling.
Drain Current - (Measured in Ampere) - Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

STEP 1: Convert Input(s) to Base Unit

Drain Current: 1.066 Milliampere --> 0.001066 Ampere (Check conversion here)
Scaling Factor: 1.5 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D' = I_D/Sf --> 0.001066/1.5

Evaluating ... ...

I_D' = 0.000710666666666667

STEP 3: Convert Result to Output's Unit

0.000710666666666667 Ampere -->0.710666666666667 Milliampere (Check conversion here)

FINAL ANSWER

0.710666666666667 ≈ 0.710667 Milliampere <-- Drain Current after Full Scaling

(Calculation completed in 00.004 seconds)

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Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

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Dayananda Sagar College Of Engineering (DSCE), Banglore

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< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

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Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

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Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

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Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

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Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Drain Current after Full Scaling VLSI Formula

Drain Current after Full Scaling = Drain Current/Scaling Factor
I_D' = I_D/Sf

Concept of Short-Channel Effects and their influence on Drain Current in scaled MOSFETs.

Short-Channel Effects become more pronounced with scaling, impacting drain current. These effects include increased subthreshold leakage and reduced control over the channel, leading to non-ideal transistor behavior.

How to Calculate Drain Current after Full Scaling VLSI?

Drain Current after Full Scaling VLSI calculator uses Drain Current after Full Scaling = Drain Current/Scaling Factor to calculate the Drain Current after Full Scaling, The Drain Current after Full Scaling VLSI formula is defined as a drain current value after reduction in dimensions of MOSFET by full scaling. Drain Current after Full Scaling is denoted by I_D' symbol.

How to calculate Drain Current after Full Scaling VLSI using this online calculator? To use this online calculator for Drain Current after Full Scaling VLSI, enter Drain Current (I_D) & Scaling Factor (Sf) and hit the calculate button. Here is how the Drain Current after Full Scaling VLSI calculation can be explained with given input values -> 710.6667 = 0.001066/1.5.

FAQ

What is Drain Current after Full Scaling VLSI?

The Drain Current after Full Scaling VLSI formula is defined as a drain current value after reduction in dimensions of MOSFET by full scaling and is represented as I_D' = I_D/Sf or Drain Current after Full Scaling = Drain Current/Scaling Factor. Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal & Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

How to calculate Drain Current after Full Scaling VLSI?

The Drain Current after Full Scaling VLSI formula is defined as a drain current value after reduction in dimensions of MOSFET by full scaling is calculated using Drain Current after Full Scaling = Drain Current/Scaling Factor. To calculate Drain Current after Full Scaling VLSI, you need Drain Current (I_D) & Scaling Factor (Sf). With our tool, you need to enter the respective value for Drain Current & Scaling Factor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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