Gate Source Capacitance Given Overlap Capacitance Calculator

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Bipolar IC Fabrication

MOS IC Fabrication

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✖Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Width [W_t]			+10% -10%
✖Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Length [L_t]			+10% -10%
✖Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Overlap Capacitance is a parasitic capacitance that arises due to the physical overlap between the gate and the source/drain regions.ⓘ Overlap Capacitance [C_ov]			+10% -10%

✖Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET).ⓘ Gate Source Capacitance Given Overlap Capacitance [C_gs]

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Formula

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Gate Source Capacitance Given Overlap Capacitance

Formula

`"C"_{"gs"} = (2/3*"W"_{"t"}*"L"_{"t"}*"C"_{"ox"})+("W"_{"t"}*"C"_{"ov"})`

Example

`"13.75005μF"=(2/3*"5.5μm"*"3.2μm"*"3.9F")+("5.5μm"*"2.5F")`

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Gate Source Capacitance Given Overlap Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)
C_gs = (2/3*W_t*L_t*C_ox)+(W_t*C_ov)
This formula uses 5 Variables

Variables Used

Gate Source Capacitance - (Measured in Farad) - Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET).
Transistor's Width - (Measured in Meter) - Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Transistor's Length - (Measured in Meter) - Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Oxide Capacitance - (Measured in Farad) - Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.
Overlap Capacitance - (Measured in Farad) - Overlap Capacitance is a parasitic capacitance that arises due to the physical overlap between the gate and the source/drain regions.

STEP 1: Convert Input(s) to Base Unit

Transistor's Width: 5.5 Micrometer --> 5.5E-06 Meter (Check conversion here)
Transistor's Length: 3.2 Micrometer --> 3.2E-06 Meter (Check conversion here)
Oxide Capacitance: 3.9 Farad --> 3.9 Farad No Conversion Required
Overlap Capacitance: 2.5 Farad --> 2.5 Farad No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_gs = (2/3*W_t*L_t*C_ox)+(W_t*C_ov) --> (2/3*5.5E-06*3.2E-06*3.9)+(5.5E-06*2.5)

Evaluating ... ...

C_gs = 1.375004576E-05

STEP 3: Convert Result to Output's Unit

1.375004576E-05 Farad -->13.75004576 Microfarad (Check conversion here)

FINAL ANSWER

13.75004576 ≈ 13.75005 Microfarad <-- Gate Source Capacitance

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Gate Source Capacitance Given Overlap Capacitance Formula

Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)
C_gs = (2/3*W_t*L_t*C_ox)+(W_t*C_ov)

Why is Gate-Source Capacitance Important?

Gate-source capacitance impacts the high-frequency performance of MOSFETs and is essential for understanding the transistor's behavior in dynamic conditions. It influences the speed and signal integrity of MOSFET-based circuits.

How to Calculate Gate Source Capacitance Given Overlap Capacitance?

Gate Source Capacitance Given Overlap Capacitance calculator uses Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance) to calculate the Gate Source Capacitance, The Gate Source Capacitance Given Overlap Capacitance formula is defined as the capacitance between the gate and source terminals. Gate Source Capacitance is denoted by C_gs symbol.

How to calculate Gate Source Capacitance Given Overlap Capacitance using this online calculator? To use this online calculator for Gate Source Capacitance Given Overlap Capacitance, enter Transistor's Width (W_t), Transistor's Length (L_t), Oxide Capacitance (C_ox) & Overlap Capacitance (C_ov) and hit the calculate button. Here is how the Gate Source Capacitance Given Overlap Capacitance calculation can be explained with given input values -> 1.4E-5 = (2/3*5.5E-06*3.2E-06*3.9)+(5.5E-06*2.5).

FAQ

What is Gate Source Capacitance Given Overlap Capacitance?

The Gate Source Capacitance Given Overlap Capacitance formula is defined as the capacitance between the gate and source terminals and is represented as C_gs = (2/3*W_t*L_t*C_ox)+(W_t*C_ov) or Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance). Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs & Overlap Capacitance is a parasitic capacitance that arises due to the physical overlap between the gate and the source/drain regions.

How to calculate Gate Source Capacitance Given Overlap Capacitance?

The Gate Source Capacitance Given Overlap Capacitance formula is defined as the capacitance between the gate and source terminals is calculated using Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance). To calculate Gate Source Capacitance Given Overlap Capacitance, you need Transistor's Width (W_t), Transistor's Length (L_t), Oxide Capacitance (C_ox) & Overlap Capacitance (C_ov). With our tool, you need to enter the respective value for Transistor's Width, Transistor's Length, Oxide Capacitance & Overlap Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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