Instantaneous Drain Current using Voltage between Drain and Source Calculator

✖Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).ⓘ Transconductance Parameter [K_n]			+10% -10%
✖Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.ⓘ Voltage across Oxide [V_ox]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%
✖The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.ⓘ Voltage between Gate and Source [V_gs]			+10% -10%

✖Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.ⓘ Instantaneous Drain Current using Voltage between Drain and Source [i_d]

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Formula

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Instantaneous Drain Current using Voltage between Drain and Source

Formula

`"i"_{"d"} = "K"_{"n"}*("V"_{"ox"}-"V"_{"t"})*"V"_{"gs"}`

Example

`"17.48907mA"="2.95mA/V²"*("3.775V"-"2V")*"3.34V"`

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Instantaneous Drain Current using Voltage between Drain and Source Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source
i_d = K_n*(V_ox-V_t)*V_gs
This formula uses 5 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.
Transconductance Parameter - (Measured in Ampere per Square Volt) - Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).
Voltage across Oxide - (Measured in Volt) - Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.

STEP 1: Convert Input(s) to Base Unit

Transconductance Parameter: 2.95 Milliampere per Square Volt --> 0.00295 Ampere per Square Volt (Check conversion here)
Voltage across Oxide: 3.775 Volt --> 3.775 Volt No Conversion Required
Threshold Voltage: 2 Volt --> 2 Volt No Conversion Required
Voltage between Gate and Source: 3.34 Volt --> 3.34 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_d = K_n*(V_ox-V_t)*V_gs --> 0.00295*(3.775-2)*3.34

Evaluating ... ...

i_d = 0.017489075

STEP 3: Convert Result to Output's Unit

0.017489075 Ampere -->17.489075 Milliampere (Check conversion here)

FINAL ANSWER

17.489075 ≈ 17.48907 Milliampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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< 18 Transistor Amplifier Characteristics Calculators

Current Flowing through Induced Channel in Transistor given Oxide Voltage

Go Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source

Overall Effective Voltage of MOSFET Transconductance

Go Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel)))

Current Entering Drain Terminal of MOSFET at Saturation

Go Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2

Input Voltage given Signal Voltage

Go Fundamental Component Voltage = (Finite Input Resistance/(Finite Input Resistance+Signal Resistance))*Small Signal Voltage

Transconductance Parameter of MOS Transistor

Go Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source)

Instantaneous Drain Current using Voltage between Drain and Source

Go Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source

Drain Current of Transistor

Go Drain Current = (Fundamental Component Voltage+Total Instantaneous Drain Voltage)/Drain Resistance

Total Instantaneous Drain Voltage

Go Total Instantaneous Drain Voltage = Fundamental Component Voltage-Drain Resistance*Drain Current

Input Voltage in Transistor

Go Fundamental Component Voltage = Drain Resistance*Drain Current-Total Instantaneous Drain Voltage

Transconductance of Transistor Amplifiers

Go MOSFET Primary Transconductance = (2*Drain Current)/(Voltage across Oxide-Threshold Voltage)

Signal Current in Emitter given Input Signal

Go Signal Current in Emitter = Fundamental Component Voltage/Emitter Resistance

Transconductance using Collector Current of Transistor Amplifier

Go MOSFET Primary Transconductance = Collector Current/Threshold Voltage

Input Resistance of Common-Collector Amplifier

Go Input Resistance = Fundamental Component Voltage/Base Current

Output Resistance of Common Gate Circuit given Test-Voltage

Go Finite Output Resistance = Test Voltage/Test Current

Amplifier Input of Transistor Amplifier

Go Amplifier Input = Input Resistance*Input Current

DC Current Gain of Amplifier

Go DC Current Gain = Collector Current/Base Current

Input Resistance of Common-Gate Circuit

Go Input Resistance = Test Voltage/Test Current

Test Current of Transistor Amplifier

Go Test Current = Test Voltage/Input Resistance

< 18 CV Actions of Common Stage Amplifiers Calculators

Output Voltage of Controlled Source Transistor

Go DC Component of Gate to Source Voltage = (Voltage Gain*Electric Current-Short Circuit Transconductance*Differential Output Signal)*(1/Final Resistance+1/Resistance of Primary Winding in Secondary)

Input Resistance of Common-Base Circuit

Go Input Resistance = (Emitter Resistance*(Finite Output Resistance+Load Resistance))/(Finite Output Resistance+(Load Resistance/(Collector Base Current Gain+1)))

Output Resistance at Another Drain of Controlled Source Transistor

Go Drain Resistance = Resistance of Secondary Winding in Primary+2*Finite Resistance+2*Finite Resistance*MOSFET Primary Transconductance*Resistance of Secondary Winding in Primary

Output Resistance of Emitter-Degenerated CE Amplifier

Go Drain Resistance = Finite Output Resistance+(MOSFET Primary Transconductance*Finite Output Resistance)*(1/Emitter Resistance+1/Small Signal Input Resistance)

Input Resistance of Common Emitter Amplifier given Small-Signal Input Resistance

Go Input Resistance = (1/Base Resistance+1/Base Resistance 2+1/(Small Signal Input Resistance+(Collector Base Current Gain+1)*Emitter Resistance))^-1

Output Resistance of CS Amplifier with Source Resistance

Go Drain Resistance = Finite Output Resistance+Source Resistance+(MOSFET Primary Transconductance*Finite Output Resistance*Source Resistance)

Input Resistance of Common-Emitter Amplifier given Emitter Resistance

Go Input Resistance = (1/Base Resistance+1/Base Resistance 2+1/((Total Resistance+Emitter Resistance)*(Collector Base Current Gain+1)))^-1

Instantaneous Drain Current using Voltage between Drain and Source

Go Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source

Transconductance in Common Source Amplifier

Go MOSFET Primary Transconductance = Unity Gain Frequency*(Gate to Source Capacitance+Capacitance Gate to Drain)

Input Resistance of Common Emitter Amplifier

Go Input Resistance = (1/Base Resistance+1/Base Resistance 2+1/Small Signal Input Resistance)^-1

Input Impedance of Common-Base Amplifier

Go Input Impedance = (1/Emitter Resistance+1/Small Signal Input Resistance)^(-1)

Signal Current in Emitter given Input Signal

Go Signal Current in Emitter = Fundamental Component Voltage/Emitter Resistance

Transconductance using Collector Current of Transistor Amplifier

Go MOSFET Primary Transconductance = Collector Current/Threshold Voltage

Fundamental Voltage in Common-Emitter Amplifier

Go Fundamental Component Voltage = Input Resistance*Base Current

Input Resistance of Common-Collector Amplifier

Go Input Resistance = Fundamental Component Voltage/Base Current

Resistance of Emitter in Common-Base Amplifier

Go Emitter Resistance = Input Voltage/Emitter Current

Emitter Current of Common-Base Amplifier

Go Emitter Current = Input Voltage/Emitter Resistance

Load Voltage of CS Amplifier

Go Load Voltage = Voltage Gain*Input Voltage

Instantaneous Drain Current using Voltage between Drain and Source Formula

Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source
i_d = K_n*(V_ox-V_t)*V_gs

What is MOSFET and its application?

MOSFET is used for switching or amplifying signals. The ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. MOSFETs are now even more common than BJTs (bipolar junction transistors) in digital and analog circuits.

How to Calculate Instantaneous Drain Current using Voltage between Drain and Source?

Instantaneous Drain Current using Voltage between Drain and Source calculator uses Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source to calculate the Drain Current, The Instantaneous drain current using voltage between drain and source indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. However, the rated maximum drain current should not be allowed to flow to the chip. Drain Current is denoted by i_d symbol.

How to calculate Instantaneous Drain Current using Voltage between Drain and Source using this online calculator? To use this online calculator for Instantaneous Drain Current using Voltage between Drain and Source, enter Transconductance Parameter (K_n), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs) and hit the calculate button. Here is how the Instantaneous Drain Current using Voltage between Drain and Source calculation can be explained with given input values -> 17311.22 = 0.00295*(3.775-2)*3.34.

FAQ

What is Instantaneous Drain Current using Voltage between Drain and Source?

The Instantaneous drain current using voltage between drain and source indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. However, the rated maximum drain current should not be allowed to flow to the chip and is represented as i_d = K_n*(V_ox-V_t)*V_gs or Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source. Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L), Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals & The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.

How to calculate Instantaneous Drain Current using Voltage between Drain and Source?

The Instantaneous drain current using voltage between drain and source indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. However, the rated maximum drain current should not be allowed to flow to the chip is calculated using Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source. To calculate Instantaneous Drain Current using Voltage between Drain and Source, you need Transconductance Parameter (K_n), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs). With our tool, you need to enter the respective value for Transconductance Parameter, Voltage across Oxide, Threshold Voltage & Voltage between Gate and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current?

In this formula, Drain Current uses Transconductance Parameter, Voltage across Oxide, Threshold Voltage & Voltage between Gate and Source. We can use 1 other way(s) to calculate the same, which is/are as follows -

Drain Current = (Fundamental Component Voltage+Total Instantaneous Drain Voltage)/Drain Resistance

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