## Maximum Depletion Depth Solution

STEP 0: Pre-Calculation Summary
Formula Used
Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))
xdm = sqrt((2*[Permitivity-silicon]*modulus(2*Φf))/([Charge-e]*NA))
This formula uses 2 Constants, 2 Functions, 3 Variables
Constants Used
[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
modulus - Modulus of a number is the remainder when that number is divided by another number., modulus
Variables Used
Maximum Depletion Depth - (Measured in Meter) - Maximum Depletion Depth refers to the maximum extent to which the depletion region extends into the semiconductor material of the device under certain operating conditions.
Bulk Fermi Potential - (Measured in Volt) - Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.
Doping Concentration of Acceptor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.
STEP 1: Convert Input(s) to Base Unit
Bulk Fermi Potential: 0.25 Volt --> 0.25 Volt No Conversion Required
Doping Concentration of Acceptor: 1.32 Electrons per Cubic Centimeter --> 1320000 Electrons per Cubic Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
xdm = sqrt((2*[Permitivity-silicon]*modulus(2*Φf))/([Charge-e]*NA)) --> sqrt((2*[Permitivity-silicon]*modulus(2*0.25))/([Charge-e]*1320000))
Evaluating ... ...
xdm = 7437907.45302539
STEP 3: Convert Result to Output's Unit
7437907.45302539 Meter --> No Conversion Required
7437907.45302539 7.4E+6 Meter <-- Maximum Depletion Depth
(Calculation completed in 00.004 seconds)
You are here -
Home »

## Credits

Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
banuprakash has created this Calculator and 50+ more calculators!
Verified by Dipanjona Mallick
Heritage Insitute of technology (HITK), Kolkata
Dipanjona Mallick has verified this Calculator and 50+ more calculators!

## <MOS Transistor Calculators

Sidewall Voltage Equivalence Factor
​ Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
Fermi Potential for P Type
​ Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Equivalent Large Signal Junction Capacitance
​ Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
Zero Bias Sidewall Junction Capacitance per Unit Length
​ Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

## Maximum Depletion Depth Formula

Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))
xdm = sqrt((2*[Permitivity-silicon]*modulus(2*Φf))/([Charge-e]*NA))

## How is the depletion region formed in a MOSFET?

The depletion region is formed when a voltage is applied to the gate terminal, creating an electric field that repels majority carriers (electrons or holes) away from the interface.

## How to Calculate Maximum Depletion Depth?

Maximum Depletion Depth calculator uses Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor)) to calculate the Maximum Depletion Depth, The Maximum Depletion Depth formula is defined as the maximum extent to which the depletion region extends into the semiconductor material of the device under certain operating conditions. Maximum Depletion Depth is denoted by xdm symbol.

How to calculate Maximum Depletion Depth using this online calculator? To use this online calculator for Maximum Depletion Depth, enter Bulk Fermi Potential f) & Doping Concentration of Acceptor (NA) and hit the calculate button. Here is how the Maximum Depletion Depth calculation can be explained with given input values -> 7.4E+6 = sqrt((2*[Permitivity-silicon]*modulus(2*0.25))/([Charge-e]*1320000)).

### FAQ

What is Maximum Depletion Depth?
The Maximum Depletion Depth formula is defined as the maximum extent to which the depletion region extends into the semiconductor material of the device under certain operating conditions and is represented as xdm = sqrt((2*[Permitivity-silicon]*modulus(2*Φf))/([Charge-e]*NA)) or Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor)). Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material & Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.
How to calculate Maximum Depletion Depth?
The Maximum Depletion Depth formula is defined as the maximum extent to which the depletion region extends into the semiconductor material of the device under certain operating conditions is calculated using Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor)). To calculate Maximum Depletion Depth, you need Bulk Fermi Potential f) & Doping Concentration of Acceptor (NA). With our tool, you need to enter the respective value for Bulk Fermi Potential & Doping Concentration of Acceptor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
Let Others Know