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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 500+ more calculators!
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Oxide Thickness Solution

STEP 0: Pre-Calculation Summary
Formula Used
oxide_thickness = Permittivity of Oxide Layer*transition width*Gate length/Gate Capacitance
tox = εox*W*L/Cg
This formula uses 4 Variables
Variables Used
Permittivity of Oxide Layer- Permittivity of Oxide Layer is the parameter of oxide layer
transition width - transition width As the drain-to-source voltage increases, the triode region transitions to the saturation (Measured in Nanometer)
Gate length - Gate length is the measurement or extent of something from end to end. (Measured in Meter)
Gate Capacitance - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor. (Measured in Farad)
STEP 1: Convert Input(s) to Base Unit
Permittivity of Oxide Layer: 6 --> No Conversion Required
transition width: 3 Nanometer --> 3E-09 Meter (Check conversion here)
Gate length: 20 Meter --> 20 Meter No Conversion Required
Gate Capacitance: 4 Farad --> 4 Farad No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
tox = εox*W*L/Cg --> 6*3E-09*20/4
Evaluating ... ...
tox = 9E-08
STEP 3: Convert Result to Output's Unit
9E-08 Meter -->90 Nanometer (Check conversion here)
FINAL ANSWER
90 Nanometer <-- Oxide thickness
(Calculation completed in 00.017 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Oxide Thickness Formula

oxide_thickness = Permittivity of Oxide Layer*transition width*Gate length/Gate Capacitance
tox = εox*W*L/Cg

How many transistors does a Static RAM use?

Static RAM makes use of six transistors. It also needs to be said that, under Static RAM, read and write operations make use of the same port.

How to Calculate Oxide Thickness?

Oxide Thickness calculator uses oxide_thickness = Permittivity of Oxide Layer*transition width*Gate length/Gate Capacitance to calculate the Oxide thickness, The Oxide Thickness(Tox) formula is defined as is the thickness of silicon oxide film that provides the same electrical performance. Oxide thickness and is denoted by tox symbol.

How to calculate Oxide Thickness using this online calculator? To use this online calculator for Oxide Thickness, enter Permittivity of Oxide Layer (εox), transition width (W), Gate length (L) and Gate Capacitance (Cg) and hit the calculate button. Here is how the Oxide Thickness calculation can be explained with given input values -> 90 = 6*3E-09*20/4.

FAQ

What is Oxide Thickness?
The Oxide Thickness(Tox) formula is defined as is the thickness of silicon oxide film that provides the same electrical performance and is represented as tox = εox*W*L/Cg or oxide_thickness = Permittivity of Oxide Layer*transition width*Gate length/Gate Capacitance. Permittivity of Oxide Layer is the parameter of oxide layer, transition width As the drain-to-source voltage increases, the triode region transitions to the saturation, Gate length is the measurement or extent of something from end to end and Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.
How to calculate Oxide Thickness?
The Oxide Thickness(Tox) formula is defined as is the thickness of silicon oxide film that provides the same electrical performance is calculated using oxide_thickness = Permittivity of Oxide Layer*transition width*Gate length/Gate Capacitance. To calculate Oxide Thickness, you need Permittivity of Oxide Layer (εox), transition width (W), Gate length (L) and Gate Capacitance (Cg). With our tool, you need to enter the respective value for Permittivity of Oxide Layer, transition width, Gate length and Gate Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Oxide thickness?
In this formula, Oxide thickness uses Permittivity of Oxide Layer, transition width, Gate length and Gate Capacitance. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Oxide Thickness calculator used?
Among many, Oxide Thickness calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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