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## Credits

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 500+ more calculators!
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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## Area Of Source Diffusion(AS) Solution

STEP 0: Pre-Calculation Summary
Formula Used
area_of_source_diffussion = length of source*transition width
AS = D*W
This formula uses 2 Variables
Variables Used
length of source- length of source gate junction
transition width - transition width As the drain-to-source voltage increases, the triode region transitions to the saturation (Measured in Nanometer)
STEP 1: Convert Input(s) to Base Unit
length of source: 3 --> No Conversion Required
transition width: 3 Nanometer --> 3E-09 Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
AS = D*W --> 3*3E-09
Evaluating ... ...
AS = 9E-09
STEP 3: Convert Result to Output's Unit
9E-09 Square Meter -->1.3528826676E+20 Electron Cross Section (Check conversion here)
FINAL ANSWER
1.3528826676E+20 Electron Cross Section <-- Area Of Source Diffusion
(Calculation completed in 00.016 seconds)

## < 10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

### Area Of Source Diffusion(AS) Formula

area_of_source_diffussion = length of source*transition width
AS = D*W

## Discuss the process of doping?

Simply we can say that doping is the process of adding impurities. Extrinsic semiconductors are made by doping process. The two types of doped semiconductor materials are P type and N type materials.

## How to Calculate Area Of Source Diffusion(AS)?

Area Of Source Diffusion(AS) calculator uses area_of_source_diffussion = length of source*transition width to calculate the Area Of Source Diffusion, The Area Of Source Diffusion(AS) formula is defined as is the net movement of anything from a region of higher concentration to a region of lower concentration area in the Source gate. Area Of Source Diffusion and is denoted by AS symbol.

How to calculate Area Of Source Diffusion(AS) using this online calculator? To use this online calculator for Area Of Source Diffusion(AS), enter length of source (D) and transition width (W) and hit the calculate button. Here is how the Area Of Source Diffusion(AS) calculation can be explained with given input values -> 1.353E+20 = 3*3E-09.

### FAQ

What is Area Of Source Diffusion(AS)?
The Area Of Source Diffusion(AS) formula is defined as is the net movement of anything from a region of higher concentration to a region of lower concentration area in the Source gate and is represented as AS = D*W or area_of_source_diffussion = length of source*transition width. length of source gate junction and transition width As the drain-to-source voltage increases, the triode region transitions to the saturation.
How to calculate Area Of Source Diffusion(AS)?
The Area Of Source Diffusion(AS) formula is defined as is the net movement of anything from a region of higher concentration to a region of lower concentration area in the Source gate is calculated using area_of_source_diffussion = length of source*transition width. To calculate Area Of Source Diffusion(AS), you need length of source (D) and transition width (W). With our tool, you need to enter the respective value for length of source and transition width and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Area Of Source Diffusion?
In this formula, Area Of Source Diffusion uses length of source and transition width. We can use 10 other way(s) to calculate the same, which is/are as follows -
• dynamic_power = Drain Voltage^2*frequency*Capacitance
• drain_voltage = sqrt(dynamic power/frequency*Capacitance)
• static_power = static current*Drain Voltage
• static_current = Static power/Drain Voltage
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
• threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
• potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
• potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Area Of Source Diffusion(AS) calculator used?
Among many, Area Of Source Diffusion(AS) calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
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