Area of Source Diffusion Solution

STEP 0: Pre-Calculation Summary
Formula Used
Area of Source Diffusion = Length of Source*Transition Width
As = Ds*W
This formula uses 3 Variables
Variables Used
Area of Source Diffusion - (Measured in Square Meter) - Area of Source Diffusion is defined as net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate.
Length of Source - (Measured in Meter) - Length of Source is defined as the total length observed at the source junction of the MOSFET.
Transition Width - (Measured in Meter) - Transition Width is defined as the increase in width when drain-to-source voltage increases, resulting the triode region transitioning to the saturation region.
STEP 1: Convert Input(s) to Base Unit
Length of Source: 61 Millimeter --> 0.061 Meter (Check conversion here)
Transition Width: 89.82 Millimeter --> 0.08982 Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
As = Ds*W --> 0.061*0.08982
Evaluating ... ...
As = 0.00547902
STEP 3: Convert Result to Output's Unit
0.00547902 Square Meter -->5479.02 Square Millimeter (Check conversion here)
FINAL ANSWER
5479.02 Square Millimeter <-- Area of Source Diffusion
(Calculation completed in 00.004 seconds)

Credits

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
Go PN Junction Length = Depletion Region Width+Effective Channel Length
CMOS Mean Free Path
Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Voltage at Minimum EDP
Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
Width of Source Diffusion
Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
Go Area of Source Diffusion = Length of Source*Transition Width

Area of Source Diffusion Formula

Area of Source Diffusion = Length of Source*Transition Width
As = Ds*W

What can you say about the process of doping in CMOS?

Doping in CMOS is a process of introducing impurities into the semiconductor material to modify its electrical properties. This process can enhance the performance of CMOS devices by reducing resistance, increasing mobility, and improving isolation between different components. Doping can be performed using various techniques including implantation and diffusion.

How to Calculate Area of Source Diffusion?

Area of Source Diffusion calculator uses Area of Source Diffusion = Length of Source*Transition Width to calculate the Area of Source Diffusion, The Area of Source Diffusion formula is defined as the net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate. Area of Source Diffusion is denoted by As symbol.

How to calculate Area of Source Diffusion using this online calculator? To use this online calculator for Area of Source Diffusion, enter Length of Source (Ds) & Transition Width (W) and hit the calculate button. Here is how the Area of Source Diffusion calculation can be explained with given input values -> 5.5E+9 = 0.061*0.08982.

FAQ

What is Area of Source Diffusion?
The Area of Source Diffusion formula is defined as the net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate and is represented as As = Ds*W or Area of Source Diffusion = Length of Source*Transition Width. Length of Source is defined as the total length observed at the source junction of the MOSFET & Transition Width is defined as the increase in width when drain-to-source voltage increases, resulting the triode region transitioning to the saturation region.
How to calculate Area of Source Diffusion?
The Area of Source Diffusion formula is defined as the net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate is calculated using Area of Source Diffusion = Length of Source*Transition Width. To calculate Area of Source Diffusion, you need Length of Source (Ds) & Transition Width (W). With our tool, you need to enter the respective value for Length of Source & Transition Width and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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