Concentration of Holes in Valence Band Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

Energy Band & Charge Carrier

Electrons & Holes

Semiconductor Carriers

SSD Junction

✖Effective Density of State in Valence Band is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited.ⓘ Effective Density of State in Valence Band [N_v]			+10% -10%
✖Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.ⓘ Fermi Function [f_E]			+10% -10%

✖Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.ⓘ Concentration of Holes in Valence Band [p₀]

⎘ Copy

👎

Formula

✖

Concentration of Holes in Valence Band

Formula

`"p"_{"0"} = "N"_{"v"}*(1-"f"_{"E"})`

Example

`"2.3E^11/m³"="2.4e11/m³"*(1-"0.022")`

Calculator

LaTeX

Reset

👍

Download Energy Band & Charge Carrier Formulas PDF PDF Image

Concentration of Holes in Valence Band Solution

STEP 0: Pre-Calculation Summary

Formula Used

Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)
p₀ = N_v*(1-f_E)
This formula uses 3 Variables

Variables Used

Holes Concentration in Valance Band - (Measured in 1 per Cubic Meter) - Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.
Effective Density of State in Valence Band - (Measured in 1 per Cubic Meter) - Effective Density of State in Valence Band is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited.
Fermi Function - Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

STEP 1: Convert Input(s) to Base Unit

Effective Density of State in Valence Band: 240000000000 1 per Cubic Meter --> 240000000000 1 per Cubic Meter No Conversion Required
Fermi Function: 0.022 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

p₀ = N_v*(1-f_E) --> 240000000000*(1-0.022)

Evaluating ... ...

p₀ = 234720000000

STEP 3: Convert Result to Output's Unit

234720000000 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

234720000000 ≈ 2.3E+11 1 per Cubic Meter <-- Holes Concentration in Valance Band

(Calculation completed in 00.008 seconds)

You are here -

Home » Engineering » Electronics » Solid State Devices » Energy Band & Charge Carrier » Concentration of Holes in Valence Band

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

Concentration of Holes in Valence Band Formula

Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)
p₀ = N_v*(1-f_E)

Does valence band contain holes?

Holes reside in the valence band, a level below the conduction band. Doping with an electron acceptor, an atom which may accept an electron, creates a deficiency of electrons, the same as an excess of holes. Since holes are positive charge carriers, an electron acceptor dopant is also known as a P-type dopant.

How to Calculate Concentration of Holes in Valence Band?

Concentration of Holes in Valence Band calculator uses Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function) to calculate the Holes Concentration in Valance Band, The Concentration of Holes in Valence Band formula is defined as acceptor creates one hole in the valence band, and the hole concentration, p, in the valence band of a p-type semiconductor is approximately equal to the acceptor concentration, Na. Holes Concentration in Valance Band is denoted by p₀ symbol.

How to calculate Concentration of Holes in Valence Band using this online calculator? To use this online calculator for Concentration of Holes in Valence Band, enter Effective Density of State in Valence Band (N_v) & Fermi Function (f_E) and hit the calculate button. Here is how the Concentration of Holes in Valence Band calculation can be explained with given input values -> 2.3E+11 = 240000000000*(1-0.022).

FAQ

What is Concentration of Holes in Valence Band?

The Concentration of Holes in Valence Band formula is defined as acceptor creates one hole in the valence band, and the hole concentration, p, in the valence band of a p-type semiconductor is approximately equal to the acceptor concentration, Na and is represented as p₀ = N_v*(1-f_E) or Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function). Effective Density of State in Valence Band is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited & Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

How to calculate Concentration of Holes in Valence Band?

The Concentration of Holes in Valence Band formula is defined as acceptor creates one hole in the valence band, and the hole concentration, p, in the valence band of a p-type semiconductor is approximately equal to the acceptor concentration, Na is calculated using Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function). To calculate Concentration of Holes in Valence Band, you need Effective Density of State in Valence Band (N_v) & Fermi Function (f_E). With our tool, you need to enter the respective value for Effective Density of State in Valence Band & Fermi Function and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search