## Drain Current in Saturation Region in MOS Transistor Solution

STEP 0: Pre-Calculation Summary
Formula Used
Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
ID(sat) = W*Vd(sat)*int(q*nx,x,0,Leff)
This formula uses 1 Functions, 6 Variables
Functions Used
int - The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis., int(expr, arg, from, to)
Variables Used
Saturation Region Drain Current - (Measured in Ampere) - Saturation Region Drain Current is the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode.
Channel Width - (Measured in Meter) - Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.
Saturation Electron Drift Velocity - (Measured in Meter per Second) - Saturation Electron Drift Velocity represents the electron drift velocity at saturation in a MOSFET that is at low electric fields.
Charge - (Measured in Coulomb) - A Charge is the fundamental property of forms of matter that exhibit electrostatic attraction or repulsion in the presence of other matter.
Short Channel Parameter - Short Channel Parameter is a parameter (potentially model-specific) used to describe a characteristic of the channel region in a short-channel MOSFET.
Effective Channel Length - (Measured in Meter) - Effective Channel Length is the portion of the channel that actively conducts current when the transistor is operating.
STEP 1: Convert Input(s) to Base Unit
Channel Width: 2.678 Meter --> 2.678 Meter No Conversion Required
Saturation Electron Drift Velocity: 5.773 Meter per Second --> 5.773 Meter per Second No Conversion Required
Charge: 0.3 Coulomb --> 0.3 Coulomb No Conversion Required
Short Channel Parameter: 5.12 --> No Conversion Required
Effective Channel Length: 7.76 Meter --> 7.76 Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ID(sat) = W*Vd(sat)*int(q*nx,x,0,Leff) --> 2.678*5.773*int(0.3*5.12,x,0,7.76)
Evaluating ... ...
ID(sat) = 184.27442601984
STEP 3: Convert Result to Output's Unit
184.27442601984 Ampere --> No Conversion Required
184.27442601984 โ 184.2744 Ampere <-- Saturation Region Drain Current
(Calculation completed in 00.020 seconds)
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Created by Vignesh Naidu
Vellore Institute of Technology (VIT), Vellore,Tamil Nadu
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Heritage Insitute of technology (HITK), Kolkata
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## < 20 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor
Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
Pull down Current in Linear Region
Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))
Pull down Current in Saturation Region
Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)
Saturation Time
Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)
Drain Current Flowing through MOS Transistor
Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)
Time Delay when NMOS Operates in Linear Region
Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)
Depletion Region Charge Density
Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))
Depth of Depletion Region Associated with Drain
Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage)) /([Charge-e]*Doping Concentration of Acceptor))
Drain Current in Saturation Region in MOS Transistor
Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
Fermi Potential for P Type
Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Maximum Depletion Depth
Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))
Fermi Potential for N Type
Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)
Equivalent Large Signal Capacitance
Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)
Built in Potential at Depletion Region
Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))
Depth of Depletion Region Associated with Source
Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))
Substrate Bias Coefficient
Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance
Average Power Dissipated over Period of Time
Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)
Equivalent Large Signal Junction Capacitance
Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
Work Function in MOSFET
Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)
Zero Bias Sidewall Junction Capacitance per Unit Length
Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

## Drain Current in Saturation Region in MOS Transistor Formula

Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
ID(sat) = W*Vd(sat)*int(q*nx,x,0,Leff)

## What are the Applications of Drain Current in Saturation Region in MOS Transistor ?

1. Linear Amplifiers: MOSFETs operating in saturation can be used as voltage amplifiers. By applying a small input voltage change at the gate, you can control a larger change in the drain current, resulting in a amplified output voltage at the drain. This forms the basis for various linear amplifier circuits used in signal processing applications like audio amplifiers or sensor signal conditioning.

2. Analog Switches: The MOSFET's ability to be turned "on" (saturation) and "off" (cut-off) based on the gate voltage makes it suitable for analog signal switching applications. By controlling the gate voltage, you can selectively allow or block an analog signal from passing between the drain and source terminals. This is used in circuits like multiplexers, sample-and-hold circuits, and data acquisition systems.

## How to Calculate Drain Current in Saturation Region in MOS Transistor?

Drain Current in Saturation Region in MOS Transistor calculator uses Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length) to calculate the Saturation Region Drain Current, The Drain Current in Saturation Region in MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode. Saturation Region Drain Current is denoted by ID(sat) symbol.

How to calculate Drain Current in Saturation Region in MOS Transistor using this online calculator? To use this online calculator for Drain Current in Saturation Region in MOS Transistor, enter Channel Width (W), Saturation Electron Drift Velocity (Vd(sat)), Charge (q), Short Channel Parameter (nx) & Effective Channel Length (Leff) and hit the calculate button. Here is how the Drain Current in Saturation Region in MOS Transistor calculation can be explained with given input values -> 184.2744 = 2.678*5.773*int(0.3*5.12,x,0,7.76).

### FAQ

What is Drain Current in Saturation Region in MOS Transistor?
The Drain Current in Saturation Region in MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode and is represented as ID(sat) = W*Vd(sat)*int(q*nx,x,0,Leff) or Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length). Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle, Saturation Electron Drift Velocity represents the electron drift velocity at saturation in a MOSFET that is at low electric fields, A Charge is the fundamental property of forms of matter that exhibit electrostatic attraction or repulsion in the presence of other matter, Short Channel Parameter is a parameter (potentially model-specific) used to describe a characteristic of the channel region in a short-channel MOSFET & Effective Channel Length is the portion of the channel that actively conducts current when the transistor is operating.
How to calculate Drain Current in Saturation Region in MOS Transistor?
The Drain Current in Saturation Region in MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode is calculated using Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length). To calculate Drain Current in Saturation Region in MOS Transistor, you need Channel Width (W), Saturation Electron Drift Velocity (Vd(sat)), Charge (q), Short Channel Parameter (nx) & Effective Channel Length (Leff). With our tool, you need to enter the respective value for Channel Width, Saturation Electron Drift Velocity, Charge, Short Channel Parameter & Effective Channel Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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