Drain Current in Saturation Region in MOS Transistor Calculator

✖Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.ⓘ Channel Width [W]			+10% -10%
✖Saturation Electron Drift Velocity represents the electron drift velocity at saturation in a MOSFET that is at low electric fields.ⓘ Saturation Electron Drift Velocity [V_d(sat)]			+10% -10%
✖A Charge is the fundamental property of forms of matter that exhibit electrostatic attraction or repulsion in the presence of other matter.ⓘ Charge [q]			+10% -10%
✖Short Channel Parameter is a parameter (potentially model-specific) used to describe a characteristic of the channel region in a short-channel MOSFET.ⓘ Short Channel Parameter [n_x]			+10% -10%
✖Effective Channel Length is the portion of the channel that actively conducts current when the transistor is operating.ⓘ Effective Channel Length [L_eff]			+10% -10%

✖Saturation Region Drain Current is the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode.ⓘ Drain Current in Saturation Region in MOS Transistor [I_D(sat)]

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Drain Current in Saturation Region in MOS Transistor

Formula

`"I"_{"D(sat)"} = "W"*"V"_{"d(sat)"}*int("q"*"n"_{"x"},x,0,"L"_{"eff"})`

Example

`"184.2744A"="2.678m"*"5.773m/s"*int("0.3C"*"5.12",x,0,"7.76m")`

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Drain Current in Saturation Region in MOS Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
I_D(sat) = W*V_d(sat)*int(q*n_x,x,0,L_eff)
This formula uses 1 Functions, 6 Variables

Functions Used

int - The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis., int(expr, arg, from, to)

Variables Used

Saturation Region Drain Current - (Measured in Ampere) - Saturation Region Drain Current is the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode.
Channel Width - (Measured in Meter) - Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.
Saturation Electron Drift Velocity - (Measured in Meter per Second) - Saturation Electron Drift Velocity represents the electron drift velocity at saturation in a MOSFET that is at low electric fields.
Charge - (Measured in Coulomb) - A Charge is the fundamental property of forms of matter that exhibit electrostatic attraction or repulsion in the presence of other matter.
Short Channel Parameter - Short Channel Parameter is a parameter (potentially model-specific) used to describe a characteristic of the channel region in a short-channel MOSFET.
Effective Channel Length - (Measured in Meter) - Effective Channel Length is the portion of the channel that actively conducts current when the transistor is operating.

STEP 1: Convert Input(s) to Base Unit

Channel Width: 2.678 Meter --> 2.678 Meter No Conversion Required
Saturation Electron Drift Velocity: 5.773 Meter per Second --> 5.773 Meter per Second No Conversion Required
Charge: 0.3 Coulomb --> 0.3 Coulomb No Conversion Required
Short Channel Parameter: 5.12 --> No Conversion Required
Effective Channel Length: 7.76 Meter --> 7.76 Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D(sat) = W*V_d(sat)*int(q*n_x,x,0,L_eff) --> 2.678*5.773*int(0.3*5.12,x,0,7.76)

Evaluating ... ...

I_D(sat) = 184.27442601984

STEP 3: Convert Result to Output's Unit

184.27442601984 Ampere --> No Conversion Required

FINAL ANSWER

184.27442601984 ≈ 184.2744 Ampere <-- Saturation Region Drain Current

(Calculation completed in 00.004 seconds)

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Created by Vignesh Naidu

Vellore Institute of Technology (VIT), Vellore,Tamil Nadu

Vignesh Naidu has created this Calculator and 25+ more calculators!

Verified by Dipanjona Mallick

Heritage Insitute of technology (HITK), Kolkata

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< 21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Pull down Current in Linear Region

Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))

Node Voltage at Given Instance

Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)

Pull down Current in Saturation Region

Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)

Saturation Time

Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)

Drain Current Flowing through MOS Transistor

Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)

Time Delay when NMOS Operates in Linear Region

Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)

Depletion Region Charge Density

Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))

Depth of Depletion Region Associated with Drain

Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))

Drain Current in Saturation Region in MOS Transistor

Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)

Fermi Potential for P Type

Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Maximum Depletion Depth

Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))

Fermi Potential for N Type

Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)

Equivalent Large Signal Capacitance

Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)

Built in Potential at Depletion Region

Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))

Depth of Depletion Region Associated with Source

Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))

Substrate Bias Coefficient

Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance

Average Power Dissipated over Period of Time

Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)

Equivalent Large Signal Junction Capacitance

Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Work Function in MOSFET

Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)

Zero Bias Sidewall Junction Capacitance per Unit Length

Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Drain Current in Saturation Region in MOS Transistor Formula

Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
I_D(sat) = W*V_d(sat)*int(q*n_x,x,0,L_eff)

What are the Applications of Drain Current in Saturation Region in MOS Transistor ?

1. Linear Amplifiers: MOSFETs operating in saturation can be used as voltage amplifiers. By applying a small input voltage change at the gate, you can control a larger change in the drain current, resulting in a amplified output voltage at the drain. This forms the basis for various linear amplifier circuits used in signal processing applications like audio amplifiers or sensor signal conditioning.

2. Analog Switches: The MOSFET's ability to be turned "on" (saturation) and "off" (cut-off) based on the gate voltage makes it suitable for analog signal switching applications. By controlling the gate voltage, you can selectively allow or block an analog signal from passing between the drain and source terminals. This is used in circuits like multiplexers, sample-and-hold circuits, and data acquisition systems.

How to Calculate Drain Current in Saturation Region in MOS Transistor?

Drain Current in Saturation Region in MOS Transistor calculator uses Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length) to calculate the Saturation Region Drain Current, The Drain Current in Saturation Region in MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode. Saturation Region Drain Current is denoted by I_D(sat) symbol.

How to calculate Drain Current in Saturation Region in MOS Transistor using this online calculator? To use this online calculator for Drain Current in Saturation Region in MOS Transistor, enter Channel Width (W), Saturation Electron Drift Velocity (V_d(sat)), Charge (q), Short Channel Parameter (n_x) & Effective Channel Length (L_eff) and hit the calculate button. Here is how the Drain Current in Saturation Region in MOS Transistor calculation can be explained with given input values -> 184.2744 = 2.678*5.773*int(0.3*5.12,x,0,7.76).

FAQ

What is Drain Current in Saturation Region in MOS Transistor?

The Drain Current in Saturation Region in MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode and is represented as I_D(sat) = W*V_d(sat)*int(q*n_x,x,0,L_eff) or Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length). Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle, Saturation Electron Drift Velocity represents the electron drift velocity at saturation in a MOSFET that is at low electric fields, A Charge is the fundamental property of forms of matter that exhibit electrostatic attraction or repulsion in the presence of other matter, Short Channel Parameter is a parameter (potentially model-specific) used to describe a characteristic of the channel region in a short-channel MOSFET & Effective Channel Length is the portion of the channel that actively conducts current when the transistor is operating.

How to calculate Drain Current in Saturation Region in MOS Transistor?

The Drain Current in Saturation Region in MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode is calculated using Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length). To calculate Drain Current in Saturation Region in MOS Transistor, you need Channel Width (W), Saturation Electron Drift Velocity (V_d(sat)), Charge (q), Short Channel Parameter (n_x) & Effective Channel Length (L_eff). With our tool, you need to enter the respective value for Channel Width, Saturation Electron Drift Velocity, Charge, Short Channel Parameter & Effective Channel Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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