Drain Current of MOSFET at Saturation Region Calculator

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✖Transconductance Parameter is defined as the ratio of the change in the output current to the change in the input voltage of a device.ⓘ Transconductance Parameter [β]			+10% -10%
✖Gate Source Voltage refers to the potential difference between the gate terminal and the source terminal of the device. This voltage plays a crucial role in controlling the conductivity of the MOSFET.ⓘ Gate Source Voltage [V_gs]			+10% -10%
✖Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).ⓘ Threshold Voltage with Zero Body Bias [V_th]			+10% -10%
✖Channel Length Modulation Factor where the effective channel length increases with an increase in the drain-to-source voltage.ⓘ Channel Length Modulation Factor [λ_i]			+10% -10%
✖Drain Source Voltage is the voltage accross drain and source terminal.ⓘ Drain Source Voltage [V_ds]			+10% -10%

✖Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.ⓘ Drain Current of MOSFET at Saturation Region [I_d]

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Formula

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Drain Current of MOSFET at Saturation Region

Formula

`"I"_{"d"} = "β"/2*("V"_{"gs"}-"V"_{"th"})^2*(1+"λ"_{"i"}*"V"_{"ds"})`

Example

`"0.013718A"="0.0025S"/2*("2.45V"-"3.4V")^2*(1+"9"*"1.24V")`

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Drain Current of MOSFET at Saturation Region Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)
I_d = β/2*(V_gs-V_th)^2*(1+λ_i*V_ds)
This formula uses 6 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.
Transconductance Parameter - (Measured in Siemens) - Transconductance Parameter is defined as the ratio of the change in the output current to the change in the input voltage of a device.
Gate Source Voltage - (Measured in Volt) - Gate Source Voltage refers to the potential difference between the gate terminal and the source terminal of the device. This voltage plays a crucial role in controlling the conductivity of the MOSFET.
Threshold Voltage with Zero Body Bias - (Measured in Volt) - Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).
Channel Length Modulation Factor - Channel Length Modulation Factor where the effective channel length increases with an increase in the drain-to-source voltage.
Drain Source Voltage - (Measured in Volt) - Drain Source Voltage is the voltage accross drain and source terminal.

STEP 1: Convert Input(s) to Base Unit

Transconductance Parameter: 0.0025 Siemens --> 0.0025 Siemens No Conversion Required
Gate Source Voltage: 2.45 Volt --> 2.45 Volt No Conversion Required
Threshold Voltage with Zero Body Bias: 3.4 Volt --> 3.4 Volt No Conversion Required
Channel Length Modulation Factor: 9 --> No Conversion Required
Drain Source Voltage: 1.24 Volt --> 1.24 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = β/2*(V_gs-V_th)^2*(1+λ_i*V_ds) --> 0.0025/2*(2.45-3.4)^2*(1+9*1.24)

Evaluating ... ...

I_d = 0.013718

STEP 3: Convert Result to Output's Unit

0.013718 Ampere --> No Conversion Required

FINAL ANSWER

0.013718 Ampere <-- Drain Current

(Calculation completed in 00.020 seconds)

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Created by banuprakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

banuprakash has created this Calculator and 50+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Drain Current of MOSFET at Saturation Region Formula

Why is channel length modulation factor included in the drain current equation?

Including the channel length modulation factor in the equation accounts for the reduction in effective channel length as the drain voltage increases, providing a more accurate representation of the MOSFET behavior in the saturation region.

How to Calculate Drain Current of MOSFET at Saturation Region?

Drain Current of MOSFET at Saturation Region calculator uses Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage) to calculate the Drain Current, The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage . Drain Current is denoted by I_d symbol.

How to calculate Drain Current of MOSFET at Saturation Region using this online calculator? To use this online calculator for Drain Current of MOSFET at Saturation Region, enter Transconductance Parameter (β), Gate Source Voltage (V_gs), Threshold Voltage with Zero Body Bias (V_th), Channel Length Modulation Factor (λ_i) & Drain Source Voltage (V_ds) and hit the calculate button. Here is how the Drain Current of MOSFET at Saturation Region calculation can be explained with given input values -> 0.013718 = 0.0025/2*(2.45-3.4)^2*(1+9*1.24).

FAQ

What is Drain Current of MOSFET at Saturation Region?

The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage and is represented as I_d = β/2*(V_gs-V_th)^2*(1+λ_i*V_ds) or Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage). Transconductance Parameter is defined as the ratio of the change in the output current to the change in the input voltage of a device, Gate Source Voltage refers to the potential difference between the gate terminal and the source terminal of the device. This voltage plays a crucial role in controlling the conductivity of the MOSFET, Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal), Channel Length Modulation Factor where the effective channel length increases with an increase in the drain-to-source voltage & Drain Source Voltage is the voltage accross drain and source terminal.

How to calculate Drain Current of MOSFET at Saturation Region?

The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage is calculated using Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage). To calculate Drain Current of MOSFET at Saturation Region, you need Transconductance Parameter (β), Gate Source Voltage (V_gs), Threshold Voltage with Zero Body Bias (V_th), Channel Length Modulation Factor (λ_i) & Drain Source Voltage (V_ds). With our tool, you need to enter the respective value for Transconductance Parameter, Gate Source Voltage, Threshold Voltage with Zero Body Bias, Channel Length Modulation Factor & Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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