Body Effect in MOSFET Calculator

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✖Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).ⓘ Threshold Voltage with Zero Body Bias [V_th]			+10% -10%
✖Body Effect Parameter is a parameter that characterizes the sensitivity of the threshold voltage of MOSFET.ⓘ Body Effect Parameter [γ]			+10% -10%
✖Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.ⓘ Bulk Fermi Potential [Φ_f]			+10% -10%
✖Voltage Applied to Body is the voltage applied to the body terminal. This voltage can have a significant impact on the behavior and performance of the MOSFET.ⓘ Voltage Applied to Body [V_bs]			+10% -10%

✖Threshold Voltage with Substrate is a crucial parameter that defines the point at which the transistor begins to conduct current from the source to the drain.ⓘ Body Effect in MOSFET [V_t]

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Formula

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Body Effect in MOSFET

Formula

`"V"_{"t"} = "V"_{"th"}+"γ"*(sqrt(2*"Φ"_{"f"}+"V"_{"bs"})-sqrt(2*"Φ"_{"f"}))`

Example

`"3.962586V"="3.4V"+"0.56"*(sqrt(2*"0.25V"+"2.43V")-sqrt(2*"0.25V"))`

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Body Effect in MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))
V_t = V_th+γ*(sqrt(2*Φ_f+V_bs)-sqrt(2*Φ_f))
This formula uses 1 Functions, 5 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Threshold Voltage with Substrate - (Measured in Volt) - Threshold Voltage with Substrate is a crucial parameter that defines the point at which the transistor begins to conduct current from the source to the drain.
Threshold Voltage with Zero Body Bias - (Measured in Volt) - Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).
Body Effect Parameter - Body Effect Parameter is a parameter that characterizes the sensitivity of the threshold voltage of MOSFET.
Bulk Fermi Potential - (Measured in Volt) - Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.
Voltage Applied to Body - (Measured in Volt) - Voltage Applied to Body is the voltage applied to the body terminal. This voltage can have a significant impact on the behavior and performance of the MOSFET.

STEP 1: Convert Input(s) to Base Unit

Threshold Voltage with Zero Body Bias: 3.4 Volt --> 3.4 Volt No Conversion Required
Body Effect Parameter: 0.56 --> No Conversion Required
Bulk Fermi Potential: 0.25 Volt --> 0.25 Volt No Conversion Required
Voltage Applied to Body: 2.43 Volt --> 2.43 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_t = V_th+γ*(sqrt(2*Φ_f+V_bs)-sqrt(2*Φ_f)) --> 3.4+0.56*(sqrt(2*0.25+2.43)-sqrt(2*0.25))

Evaluating ... ...

V_t = 3.96258579757846

STEP 3: Convert Result to Output's Unit

3.96258579757846 Volt --> No Conversion Required

FINAL ANSWER

3.96258579757846 ≈ 3.962586 Volt <-- Threshold Voltage with Substrate

(Calculation completed in 00.020 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Body Effect in MOSFET Formula

What is the role of the body effect parameter?

The body effect parameter quantifies the sensitivity of the threshold voltage to changes in the source-to-body voltage. It is part of the equation that describes the effective threshold voltage.

How to Calculate Body Effect in MOSFET?

Body Effect in MOSFET calculator uses Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)) to calculate the Threshold Voltage with Substrate, The Body Effect in MOSFET is defined as the phenomena that describes how the voltage applied to the semiconductor substrate (body) affects the behavior of the transistor. The body effect occurs due to the change in the threshold voltage of the MOSFET when the voltage between the source and the substrate is varied. Threshold Voltage with Substrate is denoted by V_t symbol.

How to calculate Body Effect in MOSFET using this online calculator? To use this online calculator for Body Effect in MOSFET, enter Threshold Voltage with Zero Body Bias (V_th), Body Effect Parameter (γ), Bulk Fermi Potential (Φ_f) & Voltage Applied to Body (V_bs) and hit the calculate button. Here is how the Body Effect in MOSFET calculation can be explained with given input values -> 3.962586 = 3.4+0.56*(sqrt(2*0.25+2.43)-sqrt(2*0.25)).

FAQ

What is Body Effect in MOSFET?

The Body Effect in MOSFET is defined as the phenomena that describes how the voltage applied to the semiconductor substrate (body) affects the behavior of the transistor. The body effect occurs due to the change in the threshold voltage of the MOSFET when the voltage between the source and the substrate is varied and is represented as V_t = V_th+γ*(sqrt(2*Φ_f+V_bs)-sqrt(2*Φ_f)) or Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)). Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal), Body Effect Parameter is a parameter that characterizes the sensitivity of the threshold voltage of MOSFET, Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material & Voltage Applied to Body is the voltage applied to the body terminal. This voltage can have a significant impact on the behavior and performance of the MOSFET.

How to calculate Body Effect in MOSFET?

The Body Effect in MOSFET is defined as the phenomena that describes how the voltage applied to the semiconductor substrate (body) affects the behavior of the transistor. The body effect occurs due to the change in the threshold voltage of the MOSFET when the voltage between the source and the substrate is varied is calculated using Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)). To calculate Body Effect in MOSFET, you need Threshold Voltage with Zero Body Bias (V_th), Body Effect Parameter (γ), Bulk Fermi Potential (Φ_f) & Voltage Applied to Body (V_bs). With our tool, you need to enter the respective value for Threshold Voltage with Zero Body Bias, Body Effect Parameter, Bulk Fermi Potential & Voltage Applied to Body and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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