Channel Resistance Calculator

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MOS IC Fabrication

Bipolar IC Fabrication

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✖Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Length [L_t]			+10% -10%
✖Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Width [W_t]			+10% -10%
✖Electron Mobility describes how quickly electrons can move through the material in response to an electric field.ⓘ Electron Mobility [μ_n]			+10% -10%
✖Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.ⓘ Carrier Density [Q_on]			+10% -10%

✖Channel Resistance refers to the resistance offered by the semiconductor material in the channel through which the current flows between the source and drain terminals.ⓘ Channel Resistance [R_ch]

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Formula

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Channel Resistance

Formula

`"R"_{"ch"} = "L"_{"t"}/"W"_{"t"}*1/("μ"_{"n"}*"Q"_{"on"})`

Example

`"3.463203Ω"="3.2μm"/"5.5μm"*1/("30m²/V*s"*"0.0056electrons/m³")`

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Channel Resistance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)
R_ch = L_t/W_t*1/(μ_n*Q_on)
This formula uses 5 Variables

Variables Used

Channel Resistance - (Measured in Ohm) - Channel Resistance refers to the resistance offered by the semiconductor material in the channel through which the current flows between the source and drain terminals.
Transistor's Length - (Measured in Meter) - Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Transistor's Width - (Measured in Meter) - Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Carrier Density - (Measured in Electrons per Cubic Meter) - Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.

STEP 1: Convert Input(s) to Base Unit

Transistor's Length: 3.2 Micrometer --> 3.2E-06 Meter (Check conversion here)
Transistor's Width: 5.5 Micrometer --> 5.5E-06 Meter (Check conversion here)
Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Carrier Density: 0.0056 Electrons per Cubic Meter --> 0.0056 Electrons per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_ch = L_t/W_t*1/(μ_n*Q_on) --> 3.2E-06/5.5E-06*1/(30*0.0056)

Evaluating ... ...

R_ch = 3.46320346320346

STEP 3: Convert Result to Output's Unit

3.46320346320346 Ohm --> No Conversion Required

FINAL ANSWER

3.46320346320346 ≈ 3.463203 Ohm <-- Channel Resistance

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Channel Resistance Formula

Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)
R_ch = L_t/W_t*1/(μ_n*Q_on)

Why is channel resistance important in MOSFETs?

Channel resistance plays a critical role in determining the performance of MOSFETs, influencing factors such as power dissipation, speed, and overall efficiency of electronic circuits.

How to Calculate Channel Resistance?

Channel Resistance calculator uses Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density) to calculate the Channel Resistance, The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals. Channel Resistance is denoted by R_ch symbol.

How to calculate Channel Resistance using this online calculator? To use this online calculator for Channel Resistance, enter Transistor's Length (L_t), Transistor's Width (W_t), Electron Mobility (μ_n) & Carrier Density (Q_on) and hit the calculate button. Here is how the Channel Resistance calculation can be explained with given input values -> 3.463203 = 3.2E-06/5.5E-06*1/(30*0.0056).

FAQ

What is Channel Resistance?

The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals and is represented as R_ch = L_t/W_t*1/(μ_n*Q_on) or Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density). Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Electron Mobility describes how quickly electrons can move through the material in response to an electric field & Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.

How to calculate Channel Resistance?

The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals is calculated using Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density). To calculate Channel Resistance, you need Transistor's Length (L_t), Transistor's Width (W_t), Electron Mobility (μ_n) & Carrier Density (Q_on). With our tool, you need to enter the respective value for Transistor's Length, Transistor's Width, Electron Mobility & Carrier Density and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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