## Channel Resistance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)
Rch = Lt/Wt*1/(μn*Qon)
This formula uses 5 Variables
Variables Used
Channel Resistance - (Measured in Ohm) - Channel Resistance refers to the resistance offered by the semiconductor material in the channel through which the current flows between the source and drain terminals.
Transistor's Length - (Measured in Meter) - Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Transistor's Width - (Measured in Meter) - Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Carrier Density - (Measured in Electrons per Cubic Meter) - Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.
STEP 1: Convert Input(s) to Base Unit
Transistor's Length: 3.2 Micrometer --> 3.2E-06 Meter (Check conversion ​here)
Transistor's Width: 5.5 Micrometer --> 5.5E-06 Meter (Check conversion ​here)
Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Carrier Density: 0.0056 Electrons per Cubic Meter --> 0.0056 Electrons per Cubic Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Rch = Lt/Wt*1/(μn*Qon) --> 3.2E-06/5.5E-06*1/(30*0.0056)
Evaluating ... ...
Rch = 3.46320346320346
STEP 3: Convert Result to Output's Unit
3.46320346320346 Ohm --> No Conversion Required
3.46320346320346 3.463203 Ohm <-- Channel Resistance
(Calculation completed in 00.004 seconds)
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## Credits

Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
banuprakash has created this Calculator and 50+ more calculators!
Dayananda Sagar College Of Engineering (DSCE), Banglore
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## <MOS IC Fabrication Calculators

Body Effect in MOSFET
​ Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))
Drain Current of MOSFET at Saturation Region
​ Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)
Channel Resistance
​ Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)
MOSFET Unity-Gain Frequency
​ Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

## Channel Resistance Formula

Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)
Rch = Lt/Wt*1/(μn*Qon)

## Why is channel resistance important in MOSFETs?

Channel resistance plays a critical role in determining the performance of MOSFETs, influencing factors such as power dissipation, speed, and overall efficiency of electronic circuits.

## How to Calculate Channel Resistance?

Channel Resistance calculator uses Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density) to calculate the Channel Resistance, The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals. Channel Resistance is denoted by Rch symbol.

How to calculate Channel Resistance using this online calculator? To use this online calculator for Channel Resistance, enter Transistor's Length (Lt), Transistor's Width (Wt), Electron Mobility n) & Carrier Density (Qon) and hit the calculate button. Here is how the Channel Resistance calculation can be explained with given input values -> 3.463203 = 3.2E-06/5.5E-06*1/(30*0.0056).

### FAQ

What is Channel Resistance?
The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals and is represented as Rch = Lt/Wt*1/(μn*Qon) or Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density). Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Electron Mobility describes how quickly electrons can move through the material in response to an electric field & Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.
How to calculate Channel Resistance?
The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals is calculated using Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density). To calculate Channel Resistance, you need Transistor's Length (Lt), Transistor's Width (Wt), Electron Mobility n) & Carrier Density (Qon). With our tool, you need to enter the respective value for Transistor's Length, Transistor's Width, Electron Mobility & Carrier Density and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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