MOSFET Unity-Gain Frequency Calculator

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MOS IC Fabrication

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✖Transconductance in MOSFET is a key parameter that describes the relationship between the input voltage and the output current.ⓘ Transconductance in MOSFET [g_m]			+10% -10%
✖Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET).ⓘ Gate Source Capacitance [C_gs]			+10% -10%
✖Gate Drain Capacitance refers to the capacitance between the gate and drain terminals of the device.ⓘ Gate Drain Capacitance [C_gd]			+10% -10%

✖Unity Gain Frequency in MOSFET refers to the frequency at which the voltage gain of the device drops to 1 (0dB) in a common-source configuration with a resistive load.ⓘ MOSFET Unity-Gain Frequency [f_t]

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MOSFET Unity-Gain Frequency

Formula

`"f"_{"t"} = "g"_{"m"}/("C"_{"gs"}+"C"_{"gd"})`

Example

`"37.41497kHz"="2.2S"/("56μF"+"2.8μF")`

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MOSFET Unity-Gain Frequency Solution

STEP 0: Pre-Calculation Summary

Formula Used

Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)
f_t = g_m/(C_gs+C_gd)
This formula uses 4 Variables

Variables Used

Unity Gain Frequency in MOSFET - (Measured in Hertz) - Unity Gain Frequency in MOSFET refers to the frequency at which the voltage gain of the device drops to 1 (0dB) in a common-source configuration with a resistive load.
Transconductance in MOSFET - (Measured in Siemens) - Transconductance in MOSFET is a key parameter that describes the relationship between the input voltage and the output current.
Gate Source Capacitance - (Measured in Farad) - Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET).
Gate Drain Capacitance - (Measured in Farad) - Gate Drain Capacitance refers to the capacitance between the gate and drain terminals of the device.

STEP 1: Convert Input(s) to Base Unit

Transconductance in MOSFET: 2.2 Siemens --> 2.2 Siemens No Conversion Required
Gate Source Capacitance: 56 Microfarad --> 5.6E-05 Farad (Check conversion here)
Gate Drain Capacitance: 2.8 Microfarad --> 2.8E-06 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

f_t = g_m/(C_gs+C_gd) --> 2.2/(5.6E-05+2.8E-06)

Evaluating ... ...

f_t = 37414.9659863946

STEP 3: Convert Result to Output's Unit

37414.9659863946 Hertz -->37.4149659863946 Kilohertz (Check conversion here)

FINAL ANSWER

37.4149659863946 ≈ 37.41497 Kilohertz <-- Unity Gain Frequency in MOSFET

(Calculation completed in 00.020 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

MOSFET Unity-Gain Frequency Formula

Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)
f_t = g_m/(C_gs+C_gd)

Why is the unity-gain frequency important in MOSFETs?

The unity-gain frequency is crucial in high-frequency applications. It helps determine the bandwidth and speed of a MOSFET, making it relevant in applications such as RF circuits and high-speed digital systems.

How to Calculate MOSFET Unity-Gain Frequency?

MOSFET Unity-Gain Frequency calculator uses Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance) to calculate the Unity Gain Frequency in MOSFET, The MOSFET Unity-Gain Frequency refers to a critical parameter related to the high-frequency performance of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices. It is the frequency at which the gain of the amplifier drops to 1, indicating that the output signal has the same magnitude as the input signal. Unity Gain Frequency in MOSFET is denoted by f_t symbol.

How to calculate MOSFET Unity-Gain Frequency using this online calculator? To use this online calculator for MOSFET Unity-Gain Frequency, enter Transconductance in MOSFET (g_m), Gate Source Capacitance (C_gs) & Gate Drain Capacitance (C_gd) and hit the calculate button. Here is how the MOSFET Unity-Gain Frequency calculation can be explained with given input values -> 0.037415 = 2.2/(5.6E-05+2.8E-06).

FAQ

What is MOSFET Unity-Gain Frequency?

The MOSFET Unity-Gain Frequency refers to a critical parameter related to the high-frequency performance of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices. It is the frequency at which the gain of the amplifier drops to 1, indicating that the output signal has the same magnitude as the input signal and is represented as f_t = g_m/(C_gs+C_gd) or Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance). Transconductance in MOSFET is a key parameter that describes the relationship between the input voltage and the output current, Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET) & Gate Drain Capacitance refers to the capacitance between the gate and drain terminals of the device.

How to calculate MOSFET Unity-Gain Frequency?

The MOSFET Unity-Gain Frequency refers to a critical parameter related to the high-frequency performance of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices. It is the frequency at which the gain of the amplifier drops to 1, indicating that the output signal has the same magnitude as the input signal is calculated using Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance). To calculate MOSFET Unity-Gain Frequency, you need Transconductance in MOSFET (g_m), Gate Source Capacitance (C_gs) & Gate Drain Capacitance (C_gd). With our tool, you need to enter the respective value for Transconductance in MOSFET, Gate Source Capacitance & Gate Drain Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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