Drift Current Density due to Free Electrons Calculator

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✖Electron Concentration refers to the number of electrons per unit volume in a material.ⓘ Electron Concentration [n]			+10% -10%
✖Electron Mobility describes how quickly electrons can move through the material in response to an electric field.ⓘ Electron Mobility [μ_n]			+10% -10%
✖Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.ⓘ Electric Field Intensity [E_i]			+10% -10%

✖Drift Current Density due to Electrons refers to the movement of charge carriers (electrons) in a semiconductor material under the influence of an electric field.ⓘ Drift Current Density due to Free Electrons [J_n]

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Formula

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Drift Current Density due to Free Electrons

Formula

`"J"_{"n"} = "[Charge-e]"*"n"*"μ"_{"n"}*"E"_{"i"}`

Example

`"53.83313µA"="[Charge-e]"*"1E^6electrons/cm³"*"30m²/V*s"*"11.2V/m"`

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Drift Current Density due to Free Electrons Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
J_n = [Charge-e]*n*μ_n*E_i
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Drift Current Density due to Electrons - (Measured in Ampere) - Drift Current Density due to Electrons refers to the movement of charge carriers (electrons) in a semiconductor material under the influence of an electric field.
Electron Concentration - (Measured in Electrons per Cubic Meter) - Electron Concentration refers to the number of electrons per unit volume in a material.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Electric Field Intensity - (Measured in Volt per Meter) - Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.

STEP 1: Convert Input(s) to Base Unit

Electron Concentration: 1000000 Electrons per Cubic Centimeter --> 1000000000000 Electrons per Cubic Meter (Check conversion here)
Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Electric Field Intensity: 11.2 Volt per Meter --> 11.2 Volt per Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

J_n = [Charge-e]*n*μ_n*E_i --> [Charge-e]*1000000000000*30*11.2

Evaluating ... ...

J_n = 5.3833134432E-05

STEP 3: Convert Result to Output's Unit

5.3833134432E-05 Ampere -->53.833134432 Microampere (Check conversion here)

FINAL ANSWER

53.833134432 ≈ 53.83313 Microampere <-- Drift Current Density due to Electrons

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Drift Current Density due to Free Electrons Formula

Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
J_n = [Charge-e]*n*μ_n*E_i

How does electron mobility affect drift current density?

Higher electron mobility means that electrons can move more easily in response to an electric field, leading to a higher drift current density.

How to Calculate Drift Current Density due to Free Electrons?

Drift Current Density due to Free Electrons calculator uses Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity to calculate the Drift Current Density due to Electrons, Drift Current Density due to Free Electrons is defined as the contribution of electrons to the overall drift current density in a semiconductor. Drift Current Density due to Electrons is denoted by J_n symbol.

How to calculate Drift Current Density due to Free Electrons using this online calculator? To use this online calculator for Drift Current Density due to Free Electrons, enter Electron Concentration (n), Electron Mobility (μ_n) & Electric Field Intensity (E_i) and hit the calculate button. Here is how the Drift Current Density due to Free Electrons calculation can be explained with given input values -> 5.4E-5 = [Charge-e]*1000000000000*30*11.2.

FAQ

What is Drift Current Density due to Free Electrons?

Drift Current Density due to Free Electrons is defined as the contribution of electrons to the overall drift current density in a semiconductor and is represented as J_n = [Charge-e]*n*μ_n*E_i or Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity. Electron Concentration refers to the number of electrons per unit volume in a material, Electron Mobility describes how quickly electrons can move through the material in response to an electric field & Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.

How to calculate Drift Current Density due to Free Electrons?

Drift Current Density due to Free Electrons is defined as the contribution of electrons to the overall drift current density in a semiconductor is calculated using Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity. To calculate Drift Current Density due to Free Electrons, you need Electron Concentration (n), Electron Mobility (μ_n) & Electric Field Intensity (E_i). With our tool, you need to enter the respective value for Electron Concentration, Electron Mobility & Electric Field Intensity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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