Drift Current Density due to Free Electrons Solution

STEP 0: Pre-Calculation Summary
Formula Used
Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
Jn = [Charge-e]*n*μn*Ei
This formula uses 1 Constants, 4 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19 Coulomb
Variables Used
Drift Current Density due to electrons - (Measured in Electrons per Cubic Meter) - Drift Current Density due to electrons flow of electrons carriers in a semiconductor due to an electric field.
Electron Concentration - (Measured in Electrons per Cubic Meter) - Electron Concentration refers to the number of electrons per unit volume in a material.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Electric Field Intensity - (Measured in Volt per Meter) - Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.
STEP 1: Convert Input(s) to Base Unit
Electron Concentration: 11 Electrons per Cubic Meter --> 11 Electrons per Cubic Meter No Conversion Required
Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Electric Field Intensity: 11.2 Volt per Meter --> 11.2 Volt per Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Jn = [Charge-e]*n*μn*Ei --> [Charge-e]*11*30*11.2
Evaluating ... ...
Jn = 5.92164478752E-16
STEP 3: Convert Result to Output's Unit
5.92164478752E-16 Electrons per Cubic Meter --> No Conversion Required
FINAL ANSWER
5.92164478752E-16 5.9E-16 Electrons per Cubic Meter <-- Drift Current Density due to electrons
(Calculation completed in 00.020 seconds)

Credits

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Dayananda Sagar College of Engineering (DSCE), Bangalore
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Switching Point Voltage
Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))
Drain Current of MOSFET at Saturation Region
Go Drain Current = 0.5*Electron Mobility*Oxide Capacitance*Transistor's Width*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)/Transistor's Length
Body Effect in MOSFET
Go Threshold Voltage = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to the Body)-sqrt(2*Bulk Fermi Potential))
Donor Dopant Concentration
Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
Channel Resistance
Go Channel Resistance = Transistor's Length*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2/(Electron Mobility*Oxide Capacitance*Transistor's Width*2)
Acceptor Dopant Concentration
Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance per Unit Area)
Maximum Dopant Concentration
Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))
Propagation Time
Go Propagation Time = 0.7*Number of Pass Transistors*(Number of Pass Transistors+1)/2*Resistance in MOSFET*Load Capaacitance
Drift Current Density due to Free Electrons
Go Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
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Go Unity Gain Frequency in MOSFET = 1/(2*pi)*MOSFET Transconductance/(Gate Source Capacitance+Gate Drain Capacitance)
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Critical Dimension
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Depth of Focus
Go Depth of Focus = Proportionality Factor*Wavelength of Light/(Numerical Aperture^2)
Equivalent Oxide Thickness
Go Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
Die Per Wafer
Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Drift Current Density due to Free Electrons Formula

Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
Jn = [Charge-e]*n*μn*Ei

How does electron mobility affect drift current density?

Higher electron mobility means that electrons can move more easily in response to an electric field, leading to a higher drift current density.

How to Calculate Drift Current Density due to Free Electrons?

Drift Current Density due to Free Electrons calculator uses Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity to calculate the Drift Current Density due to electrons, Drift Current Density due to Free Electrons formula is defined as the contribution of electrons to the overall drift current density in a semiconductor. Drift Current Density due to electrons is denoted by Jn symbol.

How to calculate Drift Current Density due to Free Electrons using this online calculator? To use this online calculator for Drift Current Density due to Free Electrons, enter Electron Concentration (n), Electron Mobility n) & Electric Field Intensity (Ei) and hit the calculate button. Here is how the Drift Current Density due to Free Electrons calculation can be explained with given input values -> 5.9E-16 = [Charge-e]*11*30*11.2.

FAQ

What is Drift Current Density due to Free Electrons?
Drift Current Density due to Free Electrons formula is defined as the contribution of electrons to the overall drift current density in a semiconductor and is represented as Jn = [Charge-e]*n*μn*Ei or Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity. Electron Concentration refers to the number of electrons per unit volume in a material, Electron Mobility describes how quickly electrons can move through the material in response to an electric field & Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.
How to calculate Drift Current Density due to Free Electrons?
Drift Current Density due to Free Electrons formula is defined as the contribution of electrons to the overall drift current density in a semiconductor is calculated using Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity. To calculate Drift Current Density due to Free Electrons, you need Electron Concentration (n), Electron Mobility n) & Electric Field Intensity (Ei). With our tool, you need to enter the respective value for Electron Concentration, Electron Mobility & Electric Field Intensity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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