Gate Drain Capacitance of FET Calculator

✖Gate Drain Capacitance off Time of an FET has a negative impact on the turn-off time of the FET. The turn-off time is the time it takes for the FET to switch from the on state to the off state.ⓘ Gate Drain Capacitance off Time [C_off(g-d)]			+10% -10%
✖Gate to Drain Voltage is the voltage difference between the gate and drain terminals of an FET. It is an important parameter for FET operation.ⓘ Gate to Drain Voltage [V_(g-d)]			+10% -10%
✖Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.ⓘ Psi [Ψ₀]			+10% -10%

✖Gate to Drain Capacitance of an FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions.ⓘ Gate Drain Capacitance of FET [C_(g-d)]

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Formula

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Gate Drain Capacitance of FET

Formula

`"C"_{"(g-d)"} = "C"_{"off(g-d)"}/(1-"V"_{"(g-d)"}/"Ψ"_{"0"})^(1/3)`

Example

`"9.536121F"="6.47F"/(1-"12.784V"/"0.01859kPa")^(1/3)`

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Gate Drain Capacitance of FET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3)
C_(g-d) = C_off(g-d)/(1-V_(g-d)/Ψ₀)^(1/3)
This formula uses 4 Variables

Variables Used

Gate to Drain Capacitance - (Measured in Farad) - Gate to Drain Capacitance of an FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions.
Gate Drain Capacitance off Time - (Measured in Farad) - Gate Drain Capacitance off Time of an FET has a negative impact on the turn-off time of the FET. The turn-off time is the time it takes for the FET to switch from the on state to the off state.
Gate to Drain Voltage - (Measured in Volt) - Gate to Drain Voltage is the voltage difference between the gate and drain terminals of an FET. It is an important parameter for FET operation.
Psi - (Measured in Pascal) - Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.

STEP 1: Convert Input(s) to Base Unit

Gate Drain Capacitance off Time: 6.47 Farad --> 6.47 Farad No Conversion Required
Gate to Drain Voltage: 12.784 Volt --> 12.784 Volt No Conversion Required
Psi: 0.01859 Kilopascal --> 18.59 Pascal (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_(g-d) = C_off(g-d)/(1-V_(g-d)/Ψ₀)^(1/3) --> 6.47/(1-12.784/18.59)^(1/3)

Evaluating ... ...

C_(g-d) = 9.53612056981509

STEP 3: Convert Result to Output's Unit

9.53612056981509 Farad --> No Conversion Required

FINAL ANSWER

9.53612056981509 ≈ 9.536121 Farad <-- Gate to Drain Capacitance

(Calculation completed in 00.004 seconds)

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< 9 FET Calculators

Ohmic Region Drain Current of FET

Go Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2)))

Transconductance of FET

Go Forward Transconductance = (2*Drain Current of Zero Bias)/Pinch OFF Voltage*(1-Gain to Source Voltage/Pinch OFF Voltage)

Drain Source Voltage of FET

Go Drain to Source Voltage = Supply Voltage at Drain-Drain Current*(Drain Resistance+Source Resistance)

Gate Substrate Capacitance of FET

Go Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2)

Drain Current of FET

Go Drain Current = Drain Current of Zero Bias*(1-Gain to Source Voltage/Cuttoff Gain to Source Voltage)^2

Gate Source Capacitance of FET

Go Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3)

Gate Drain Capacitance of FET

Go Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3)

Pinch off Voltage of FET

Go Pinch OFF Voltage = Pinch OFF Drain to Source Voltage-Gain to Source Voltage

Voltage Gain of FET

Go Voltage Gain = -Forward Transconductance*Drain Resistance

Gate Drain Capacitance of FET Formula

Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3)
C_(g-d) = C_off(g-d)/(1-V_(g-d)/Ψ₀)^(1/3)

What is Gate Drain Capacitance of FET ?

The gate-drain capacitance (C_gd) of a field-effect transistor (FET) is a parameter that characterizes the capacitance between the gate and drain terminals of the FET. It is a critical parameter in FETs and plays a significant role in the high-frequency and switching performance of these devices.

How to Calculate Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET calculator uses Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3) to calculate the Gate to Drain Capacitance, Gate Drain Capacitance of FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions is a parasitic capacitance that can affect the performance of FET circuits. Use a gate driver with a higher output current. This will help to charge and discharge the gate capacitance more quickly. C_gd can affect the switching speed, gain, and bandwidth of FET circuits. A higher Cgd can slow down the switching speed and reduce the gain and bandwidth of the circuit. Gate to Drain Capacitance is denoted by C_(g-d) symbol.

How to calculate Gate Drain Capacitance of FET using this online calculator? To use this online calculator for Gate Drain Capacitance of FET, enter Gate Drain Capacitance off Time (C_off(g-d)), Gate to Drain Voltage (V_(g-d)) & Psi (Ψ₀) and hit the calculate button. Here is how the Gate Drain Capacitance of FET calculation can be explained with given input values -> 9.536121 = 6.47/(1-12.784/18.59)^(1/3).

FAQ

What is Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions is a parasitic capacitance that can affect the performance of FET circuits. Use a gate driver with a higher output current. This will help to charge and discharge the gate capacitance more quickly. C_gd can affect the switching speed, gain, and bandwidth of FET circuits. A higher Cgd can slow down the switching speed and reduce the gain and bandwidth of the circuit and is represented as C_(g-d) = C_off(g-d)/(1-V_(g-d)/Ψ₀)^(1/3) or Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3). Gate Drain Capacitance off Time of an FET has a negative impact on the turn-off time of the FET. The turn-off time is the time it takes for the FET to switch from the on state to the off state, Gate to Drain Voltage is the voltage difference between the gate and drain terminals of an FET. It is an important parameter for FET operation & Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.

How to calculate Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions is a parasitic capacitance that can affect the performance of FET circuits. Use a gate driver with a higher output current. This will help to charge and discharge the gate capacitance more quickly. C_gd can affect the switching speed, gain, and bandwidth of FET circuits. A higher Cgd can slow down the switching speed and reduce the gain and bandwidth of the circuit is calculated using Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3). To calculate Gate Drain Capacitance of FET, you need Gate Drain Capacitance off Time (C_off(g-d)), Gate to Drain Voltage (V_(g-d)) & Psi (Ψ₀). With our tool, you need to enter the respective value for Gate Drain Capacitance off Time, Gate to Drain Voltage & Psi and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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