Gate Substrate Capacitance of FET Calculator

✖Gate Substrate Capacitance off Time of an FET can have a significant impact on the turn-off time (toff) of the device.ⓘ Gate Substrate Capacitance off Time [C_off(gss)]			+10% -10%
✖Gate Substrate Voltage is the voltage difference between the gate and substrate terminals of an FET. It is an important parameter for FET operation.ⓘ Gate Substrate Voltage [V_gss]			+10% -10%
✖Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.ⓘ Psi [Ψ₀]			+10% -10%

✖Gate Substrate Capacitance of an FET is the capacitance between the gate and substrate terminals of the FET.ⓘ Gate Substrate Capacitance of FET [C_gss]

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Formula

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Gate Substrate Capacitance of FET

Formula

`"C"_{"gss"} = "C"_{"off(gss)"}/(1-("V"_{"gss"}/"Ψ"_{"0"}))^(1/2)`

Example

`"40.54954F"="18.95F"/(1-("14.53V"/"0.01859kPa"))^(1/2)`

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Gate Substrate Capacitance of FET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2)
C_gss = C_off(gss)/(1-(V_gss/Ψ₀))^(1/2)
This formula uses 4 Variables

Variables Used

Gate Substrate Capacitance - (Measured in Farad) - Gate Substrate Capacitance of an FET is the capacitance between the gate and substrate terminals of the FET.
Gate Substrate Capacitance off Time - (Measured in Farad) - Gate Substrate Capacitance off Time of an FET can have a significant impact on the turn-off time (toff) of the device.
Gate Substrate Voltage - (Measured in Volt) - Gate Substrate Voltage is the voltage difference between the gate and substrate terminals of an FET. It is an important parameter for FET operation.
Psi - (Measured in Pascal) - Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.

STEP 1: Convert Input(s) to Base Unit

Gate Substrate Capacitance off Time: 18.95 Farad --> 18.95 Farad No Conversion Required
Gate Substrate Voltage: 14.53 Volt --> 14.53 Volt No Conversion Required
Psi: 0.01859 Kilopascal --> 18.59 Pascal (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_gss = C_off(gss)/(1-(V_gss/Ψ₀))^(1/2) --> 18.95/(1-(14.53/18.59))^(1/2)

Evaluating ... ...

C_gss = 40.5495363144907

STEP 3: Convert Result to Output's Unit

40.5495363144907 Farad --> No Conversion Required

FINAL ANSWER

40.5495363144907 ≈ 40.54954 Farad <-- Gate Substrate Capacitance

(Calculation completed in 00.020 seconds)

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< 9 FET Calculators

Ohmic Region Drain Current of FET

Go Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2)))

Transconductance of FET

Go Forward Transconductance = (2*Drain Current of Zero Bias)/Pinch OFF Voltage*(1-Gain to Source Voltage/Pinch OFF Voltage)

Drain Source Voltage of FET

Go Drain to Source Voltage = Supply Voltage at Drain-Drain Current*(Drain Resistance+Source Resistance)

Gate Substrate Capacitance of FET

Go Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2)

Drain Current of FET

Go Drain Current = Drain Current of Zero Bias*(1-Gain to Source Voltage/Cuttoff Gain to Source Voltage)^2

Gate Source Capacitance of FET

Go Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3)

Gate Drain Capacitance of FET

Go Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3)

Pinch off Voltage of FET

Go Pinch OFF Voltage = Pinch OFF Drain to Source Voltage-Gain to Source Voltage

Voltage Gain of FET

Go Voltage Gain = -Forward Transconductance*Drain Resistance

Gate Substrate Capacitance of FET Formula

Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2)
C_gss = C_off(gss)/(1-(V_gss/Ψ₀))^(1/2)

What is Gate Substrate Capacitance of FET ?

The gate-drain capacitance of a field-effect transistor (FET) is a parameter that characterizes the capacitance between the gate and drain terminals of the FET. It is a critical parameter in FETs and plays a significant role in the high-frequency and switching performance of these devices.

How to Calculate Gate Substrate Capacitance of FET?

Gate Substrate Capacitance of FET calculator uses Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2) to calculate the Gate Substrate Capacitance, Gate Substrate Capacitance of FET is the capacitance between the gate and substrate terminals of the FET. It is caused by the overlap between the gate and substrate regions ,is a parasitic capacitance that can affect the performance of FET circuits. Gate Substrate Capacitance can affect the switching speed, gain, and bandwidth of FET circuits. It can slow down the switching speed and reduce the gain and bandwidth of the circuit. Gate Substrate Capacitance is denoted by C_gss symbol.

How to calculate Gate Substrate Capacitance of FET using this online calculator? To use this online calculator for Gate Substrate Capacitance of FET, enter Gate Substrate Capacitance off Time (C_off(gss)), Gate Substrate Voltage (V_gss) & Psi (Ψ₀) and hit the calculate button. Here is how the Gate Substrate Capacitance of FET calculation can be explained with given input values -> 40.54954 = 18.95/(1-(14.53/18.59))^(1/2).

FAQ

What is Gate Substrate Capacitance of FET?

Gate Substrate Capacitance of FET is the capacitance between the gate and substrate terminals of the FET. It is caused by the overlap between the gate and substrate regions ,is a parasitic capacitance that can affect the performance of FET circuits. Gate Substrate Capacitance can affect the switching speed, gain, and bandwidth of FET circuits. It can slow down the switching speed and reduce the gain and bandwidth of the circuit and is represented as C_gss = C_off(gss)/(1-(V_gss/Ψ₀))^(1/2) or Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2). Gate Substrate Capacitance off Time of an FET can have a significant impact on the turn-off time (toff) of the device, Gate Substrate Voltage is the voltage difference between the gate and substrate terminals of an FET. It is an important parameter for FET operation & Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.

How to calculate Gate Substrate Capacitance of FET?

Gate Substrate Capacitance of FET is the capacitance between the gate and substrate terminals of the FET. It is caused by the overlap between the gate and substrate regions ,is a parasitic capacitance that can affect the performance of FET circuits. Gate Substrate Capacitance can affect the switching speed, gain, and bandwidth of FET circuits. It can slow down the switching speed and reduce the gain and bandwidth of the circuit is calculated using Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2). To calculate Gate Substrate Capacitance of FET, you need Gate Substrate Capacitance off Time (C_off(gss)), Gate Substrate Voltage (V_gss) & Psi (Ψ₀). With our tool, you need to enter the respective value for Gate Substrate Capacitance off Time, Gate Substrate Voltage & Psi and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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