Impurity Atoms Per Unit Area Calculator

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Bipolar IC Fabrication

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✖The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction.ⓘ Effective Diffusion [D_n]			+10% -10%
✖Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.ⓘ Emitter Base Junction Area [A]			+10% -10%
✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]			+10% -10%
✖Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Concentration [n_i]			+10% -10%
✖Collector current is the current that flows through the collector terminal of the transistor and is the current that is being amplified by the transistor.ⓘ Collector Current [I_c]			+10% -10%
✖Voltage Base Emitter is the voltage between the base and the emitter when forward biased, with the collector disconnected.ⓘ Voltage Base Emitter [V_be]			+10% -10%
✖Thermal Voltage is the voltages created by the junction of dissimilar metals when a temperature difference exists between these junctions.ⓘ Thermal Voltage [V_t]			+10% -10%

✖Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity.ⓘ Impurity Atoms Per Unit Area [Q_b]

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Formula

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Impurity Atoms Per Unit Area

Formula

`"Q"_{"b"} = "D"_{"n"}*("A"*(("q"*"n"_{"i"}^2)/"I"_{"c"})*exp("V"_{"be"}/"V"_{"t"}))`

Example

`"3.6E^9cm²"="0.5"*("1.75cm²"*(("5mC"*("1.32/cm³")^2)/"4.92A")*exp("3.5V"/"4.1V"))`

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Impurity Atoms Per Unit Area Solution

STEP 0: Pre-Calculation Summary

Formula Used

Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))
Q_b = D_n*(A*((q*n_i^2)/I_c)*exp(V_be/V_t))
This formula uses 1 Functions, 8 Variables

Functions Used

exp - n an exponential function, the value of the function changes by a constant factor for every unit change in the independent variable., exp(Number)

Variables Used

Total Impurity - (Measured in Square Meter) - Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity.
Effective Diffusion - The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction.
Emitter Base Junction Area - (Measured in Square Meter) - Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Collector Current - (Measured in Ampere) - Collector current is the current that flows through the collector terminal of the transistor and is the current that is being amplified by the transistor.
Voltage Base Emitter - (Measured in Volt) - Voltage Base Emitter is the voltage between the base and the emitter when forward biased, with the collector disconnected.
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltages created by the junction of dissimilar metals when a temperature difference exists between these junctions.

STEP 1: Convert Input(s) to Base Unit

Effective Diffusion: 0.5 --> No Conversion Required
Emitter Base Junction Area: 1.75 Square Centimeter --> 0.000175 Square Meter (Check conversion here)
Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Intrinsic Concentration: 1.32 1 per Cubic Centimeter --> 1320000 1 per Cubic Meter (Check conversion here)
Collector Current: 4.92 Ampere --> 4.92 Ampere No Conversion Required
Voltage Base Emitter: 3.5 Volt --> 3.5 Volt No Conversion Required
Thermal Voltage: 4.1 Volt --> 4.1 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Q_b = D_n*(A*((q*n_i^2)/I_c)*exp(V_be/V_t)) --> 0.5*(0.000175*((0.005*1320000^2)/4.92)*exp(3.5/4.1))

Evaluating ... ...

Q_b = 363831.258671893

STEP 3: Convert Result to Output's Unit

363831.258671893 Square Meter -->3638312586.71893 Square Centimeter (Check conversion here)

FINAL ANSWER

3638312586.71893 ≈ 3.6E+9 Square Centimeter <-- Total Impurity

(Calculation completed in 00.020 seconds)

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Chandigarh University (CU), Mohali, Punjab

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< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Impurity Atoms Per Unit Area Formula

What are impurity atoms used in the manufacture of semiconductors known as?

The process of adding impurities deliberately is termed as doping and the atoms that are used as an impurity are termed as dopants. The impurity modifies the electrical properties of the semiconductor and makes it more suitable for electronic devices such as diodes and transistors.

How to Calculate Impurity Atoms Per Unit Area?

Impurity Atoms Per Unit Area calculator uses Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage)) to calculate the Total Impurity, The Impurity Atoms Per Unit Area formula is defined as the amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity. Total Impurity is denoted by Q_b symbol.

How to calculate Impurity Atoms Per Unit Area using this online calculator? To use this online calculator for Impurity Atoms Per Unit Area, enter Effective Diffusion (D_n), Emitter Base Junction Area (A), Charge (q), Intrinsic Concentration (n_i), Collector Current (I_c), Voltage Base Emitter (V_be) & Thermal Voltage (V_t) and hit the calculate button. Here is how the Impurity Atoms Per Unit Area calculation can be explained with given input values -> 3.6E+13 = 0.5*(0.000175*((0.005*1320000^2)/4.92)*exp(3.5/4.1)).

FAQ

What is Impurity Atoms Per Unit Area?

The Impurity Atoms Per Unit Area formula is defined as the amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity and is represented as Q_b = D_n*(A*((q*n_i^2)/I_c)*exp(V_be/V_t)) or Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage)). The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction, Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor, Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material, Collector current is the current that flows through the collector terminal of the transistor and is the current that is being amplified by the transistor, Voltage Base Emitter is the voltage between the base and the emitter when forward biased, with the collector disconnected & Thermal Voltage is the voltages created by the junction of dissimilar metals when a temperature difference exists between these junctions.

How to calculate Impurity Atoms Per Unit Area?

The Impurity Atoms Per Unit Area formula is defined as the amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity is calculated using Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage)). To calculate Impurity Atoms Per Unit Area, you need Effective Diffusion (D_n), Emitter Base Junction Area (A), Charge (q), Intrinsic Concentration (n_i), Collector Current (I_c), Voltage Base Emitter (V_be) & Thermal Voltage (V_t). With our tool, you need to enter the respective value for Effective Diffusion, Emitter Base Junction Area, Charge, Intrinsic Concentration, Collector Current, Voltage Base Emitter & Thermal Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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