Mean Time Spend by Hole Calculator

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Electrons & Holes

Energy Band & Charge Carrier

Semiconductor Carriers

SSD Junction

✖Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons.ⓘ Optical Generation Rate [g_op]			+10% -10%
✖Majority Carrier Decay refers to the rate at which the voltage decays is determined by the amount of minority carriers that recombine per unit time.ⓘ Majority Carrier Decay [τ_p]			+10% -10%

✖Mean Time Spend By hole is defined as total time taken by the hole to recombine with the charge carrier.ⓘ Mean Time Spend by Hole [δ_p]

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Formula

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Mean Time Spend by Hole

Formula

`"δ"_{"p"} = "g"_{"op"}*"τ"_{"p"}`

Example

`"8120s"="2.9e19"*"2.8e-16"`

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Mean Time Spend by Hole Solution

STEP 0: Pre-Calculation Summary

Formula Used

Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay
δ_p = g_op*τ_p
This formula uses 3 Variables

Variables Used

Mean Time Spend by Hole - (Measured in Second) - Mean Time Spend By hole is defined as total time taken by the hole to recombine with the charge carrier.
Optical Generation Rate - Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons.
Majority Carrier Decay - Majority Carrier Decay refers to the rate at which the voltage decays is determined by the amount of minority carriers that recombine per unit time.

STEP 1: Convert Input(s) to Base Unit

Optical Generation Rate: 2.9E+19 --> No Conversion Required
Majority Carrier Decay: 2.8E-16 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

δ_p = g_op*τ_p --> 2.9E+19*2.8E-16

Evaluating ... ...

δ_p = 8120

STEP 3: Convert Result to Output's Unit

8120 Second --> No Conversion Required

FINAL ANSWER

8120 Second <-- Mean Time Spend by Hole

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

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< 18 Electrons & Holes Calculators

Phi-dependent Wave Function

Go Φ Dependent Wave Function = (1/sqrt(2*pi))*(exp(Wave Quantum Number*Wave Function Angle))

Order of Diffraction

Go Order of Diffraction = (2*Grafting Space*sin(Incident Angle))/Wavelength of Ray

Radius of Nth Orbit of Electron

Go Radius of nth Orbit of Electron = ([Coulomb]*Quantum Number^2*[hP]^2)/(Mass of Particle*[Charge-e]^2)

AC Conductance

Go AC Conductance = ([Charge-e]/([BoltZ]*Temperature))*Electric Current

Quantum State

Go Energy in Quantum State = (Quantum Number^2*pi^2*[hP]^2)/(2*Mass of Particle*Potential Well Length^2)

Hole Component

Go Hole Component = Electron Component*Emitter Injection Efficiency/(1-Emitter Injection Efficiency)

Electron Flux Density

Go Electron Flux Density = (Mean Free Path Electron/(2*Time))*Difference in Electron Concentration

Mean Free Path

Go Mean Free Path Electron = (Electron Flux Density/(Difference in Electron Concentration))*2*Time

Electron Component

Go Electron Component = ((Hole Component)/Emitter Injection Efficiency)-Hole Component

Difference in Electron Concentration

Go Difference in Electron Concentration = Electron Concentration 1-Electron Concentration 2

Electron Multiplication

Go Electron Multiplication = Number of Electron Out of Region/Number of Electron in Region

Electron Out of Region

Go Number of Electron Out of Region = Electron Multiplication*Number of Electron in Region

Electron in Region

Go Number of Electron in Region = Number of Electron Out of Region/Electron Multiplication

Total Carrier Current Density

Go Total Carrier Current Density = Electron Current Density+Hole Current Density

Electron Current Density

Go Electron Current Density = Total Carrier Current Density-Hole Current Density

Hole Current Density

Go Hole Current Density = Total Carrier Current Density-Electron Current Density

Mean Time Spend by Hole

Go Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay

Wave Function Amplitude

Go Amplitude of Wave Function = sqrt(2/Potential Well Length)

< 15 Semiconductor Carriers Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Radius of Nth Orbit of Electron

Go Radius of nth Orbit of Electron = ([Coulomb]*Quantum Number^2*[hP]^2)/(Mass of Particle*[Charge-e]^2)

Quantum State

Go Energy in Quantum State = (Quantum Number^2*pi^2*[hP]^2)/(2*Mass of Particle*Potential Well Length^2)

Electron Flux Density

Go Electron Flux Density = (Mean Free Path Electron/(2*Time))*Difference in Electron Concentration

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Electron Multiplication

Go Electron Multiplication = Number of Electron Out of Region/Number of Electron in Region

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Electron Current Density

Go Electron Current Density = Total Carrier Current Density-Hole Current Density

Hole Current Density

Go Hole Current Density = Total Carrier Current Density-Electron Current Density

Mean Time Spend by Hole

Go Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Mean Time Spend by Hole Formula

Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay
δ_p = g_op*τ_p

What is electron density?

Electron density or electronic density is the measure of the probability of an electron being present at an infinitesimal element of space surrounding any given point.

How to Calculate Mean Time Spend by Hole?

Mean Time Spend by Hole calculator uses Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay to calculate the Mean Time Spend by Hole, The Mean Time Spend by hole formula is defined as total time taken by the hole to recombine with the charge carrier. Mean Time Spend by Hole is denoted by δ_p symbol.

How to calculate Mean Time Spend by Hole using this online calculator? To use this online calculator for Mean Time Spend by Hole, enter Optical Generation Rate (g_op) & Majority Carrier Decay (τ_p) and hit the calculate button. Here is how the Mean Time Spend by Hole calculation can be explained with given input values -> 8120 = 2.9E+19*2.8E-16.

FAQ

What is Mean Time Spend by Hole?

The Mean Time Spend by hole formula is defined as total time taken by the hole to recombine with the charge carrier and is represented as δ_p = g_op*τ_p or Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay. Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons & Majority Carrier Decay refers to the rate at which the voltage decays is determined by the amount of minority carriers that recombine per unit time.

How to calculate Mean Time Spend by Hole?

The Mean Time Spend by hole formula is defined as total time taken by the hole to recombine with the charge carrier is calculated using Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay. To calculate Mean Time Spend by Hole, you need Optical Generation Rate (g_op) & Majority Carrier Decay (τ_p). With our tool, you need to enter the respective value for Optical Generation Rate & Majority Carrier Decay and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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