Mobility in Mosfet Calculator

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VLSI Material Optimization

Analog VLSI Design

✖K Prime is the reverse rate constant of the reaction.ⓘ K Prime [K_p]			+10% -10%
✖Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor.ⓘ Capacitance of Gate Oxide Layer [C_ox]			+10% -10%

✖Mobility in MOSFET is defined based on the ability of an electron to move quickly through a metal or semiconductor, when pulled by an electric field.ⓘ Mobility in Mosfet [μ_eff]

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Formula

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Mobility in Mosfet

Formula

`"μ"_{"eff"} = "K"_{"p"}/"C"_{"ox"}`

Example

`"0.150922cm²/V*s"="4.502cm²/V*s"/"29.83μF/mm²"`

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Mobility in Mosfet Solution

STEP 0: Pre-Calculation Summary

Formula Used

Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
μ_eff = K_p/C_ox
This formula uses 3 Variables

Variables Used

Mobility in MOSFET - (Measured in Square Meter per Volt per Second) - Mobility in MOSFET is defined based on the ability of an electron to move quickly through a metal or semiconductor, when pulled by an electric field.
K Prime - (Measured in Square Meter per Volt per Second) - K Prime is the reverse rate constant of the reaction.
Capacitance of Gate Oxide Layer - (Measured in Farad per Square Meter) - Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor.

STEP 1: Convert Input(s) to Base Unit

K Prime: 4.502 Square Centimeter per Volt Second --> 0.0004502 Square Meter per Volt per Second (Check conversion here)
Capacitance of Gate Oxide Layer: 29.83 Microfarad per Square Millimeter --> 29.83 Farad per Square Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

μ_eff = K_p/C_ox --> 0.0004502/29.83

Evaluating ... ...

μ_eff = 1.50921890714046E-05

STEP 3: Convert Result to Output's Unit

1.50921890714046E-05 Square Meter per Volt per Second -->0.150921890714046 Square Centimeter per Volt Second (Check conversion here)

FINAL ANSWER

0.150921890714046 ≈ 0.150922 Square Centimeter per Volt Second <-- Mobility in MOSFET

(Calculation completed in 00.020 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

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Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

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Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

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Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

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Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

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Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

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Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

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Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

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Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

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Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

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Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

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Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

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Channel Width after Full Scaling VLSI

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Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Mobility in Mosfet Formula

Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
μ_eff = K_p/C_ox

How does mobility affects the working of CMOS?

Mobility in CMOS refers to the movement of charge carriers (electrons and holes) in the transistor channels. It affects the transistor's current gain and inventory, hence the overall working of the CMOS circuit. Mobility determines the switching speed and the applicable gate voltage of a CMOS transistor.

How to Calculate Mobility in Mosfet?

Mobility in Mosfet calculator uses Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer to calculate the Mobility in MOSFET, The Mobility in Mosfet formula is defined as how quickly an electron can move through a metal or semiconductor, when pulled by an electric field. Mobility in MOSFET is denoted by μ_eff symbol.

How to calculate Mobility in Mosfet using this online calculator? To use this online calculator for Mobility in Mosfet, enter K Prime (K_p) & Capacitance of Gate Oxide Layer (C_ox) and hit the calculate button. Here is how the Mobility in Mosfet calculation can be explained with given input values -> 1500.167 = 0.0004502/29.83.

FAQ

What is Mobility in Mosfet?

The Mobility in Mosfet formula is defined as how quickly an electron can move through a metal or semiconductor, when pulled by an electric field and is represented as μ_eff = K_p/C_ox or Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer. K Prime is the reverse rate constant of the reaction & Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor.

How to calculate Mobility in Mosfet?

The Mobility in Mosfet formula is defined as how quickly an electron can move through a metal or semiconductor, when pulled by an electric field is calculated using Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer. To calculate Mobility in Mosfet, you need K Prime (K_p) & Capacitance of Gate Oxide Layer (C_ox). With our tool, you need to enter the respective value for K Prime & Capacitance of Gate Oxide Layer and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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