Noise Factor GaAs MESFET Calculator

✖Angular frequency refers to the rate at which a sinusoidal waveform oscillates in the context of electrical circuits and signals.ⓘ Angular frequency [ω]			+10% -10%
✖Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET).ⓘ Gate Source Capacitance [C_gs]			+10% -10%
✖Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage.ⓘ Transconductance of the MESFET [G_m]			+10% -10%
✖Source Resistance refers to the resistance associated with the source terminal of the transistor.ⓘ Source Resistance [R_s]			+10% -10%
✖Gate Resistance refers to the resistance associated with the gate terminal of a field-effect transistor (FET).ⓘ Gate Resistance [R_gate]			+10% -10%
✖Input Resistance refers to the resistance presented to the input terminal of the device.ⓘ Input Resistance [R_i]			+10% -10%

✖Noise Factor is a measure of how much a device,, degrades the signal-to-noise ratio (SNR) of a signal as it passes through.ⓘ Noise Factor GaAs MESFET [NF]

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Formula

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Noise Factor GaAs MESFET

Formula

`"NF" = 1+2*"ω"*"C"_{"gs"}/"G"_{"m"}*sqrt(("R"_{"s"}-"R"_{"gate"})/"R"_{"i"})`

Example

`"1.087179dB"=1+2*"53.25rad/s"*"56μF"/"0.063072S"*sqrt(("5Ω"-"1.6Ω")/"4Ω")`

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Noise Factor GaAs MESFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance)
NF = 1+2*ω*C_gs/G_m*sqrt((R_s-R_gate)/R_i)
This formula uses 1 Functions, 7 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Noise Factor - (Measured in Decibel) - Noise Factor is a measure of how much a device,, degrades the signal-to-noise ratio (SNR) of a signal as it passes through.
Angular frequency - (Measured in Radian per Second) - Angular frequency refers to the rate at which a sinusoidal waveform oscillates in the context of electrical circuits and signals.
Gate Source Capacitance - (Measured in Farad) - Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET).
Transconductance of the MESFET - (Measured in Siemens) - Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage.
Source Resistance - (Measured in Ohm) - Source Resistance refers to the resistance associated with the source terminal of the transistor.
Gate Resistance - (Measured in Ohm) - Gate Resistance refers to the resistance associated with the gate terminal of a field-effect transistor (FET).
Input Resistance - (Measured in Ohm) - Input Resistance refers to the resistance presented to the input terminal of the device.

STEP 1: Convert Input(s) to Base Unit

Angular frequency: 53.25 Radian per Second --> 53.25 Radian per Second No Conversion Required
Gate Source Capacitance: 56 Microfarad --> 5.6E-05 Farad (Check conversion here)
Transconductance of the MESFET: 0.063072 Siemens --> 0.063072 Siemens No Conversion Required
Source Resistance: 5 Ohm --> 5 Ohm No Conversion Required
Gate Resistance: 1.6 Ohm --> 1.6 Ohm No Conversion Required
Input Resistance: 4 Ohm --> 4 Ohm No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

NF = 1+2*ω*C_gs/G_m*sqrt((R_s-R_gate)/R_i) --> 1+2*53.25*5.6E-05/0.063072*sqrt((5-1.6)/4)

Evaluating ... ...

NF = 1.08717872137128

STEP 3: Convert Result to Output's Unit

1.08717872137128 Decibel --> No Conversion Required

FINAL ANSWER

1.08717872137128 ≈ 1.087179 Decibel <-- Noise Factor

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 10+ Transistor Amplifiers Calculators

Power gain of down converter given Degradation Factor

Go Power gain of down converter = Signal Frequency/Output Frequency*(Signal Frequency/Output Frequency*(Figure of Merit)^2)/(1+sqrt(1+(Signal Frequency/Output Frequency*(Figure of Merit)^2)))^2

Gain Degradation Factor for MESFET

Go Gain Degradation Factor = Output Frequency/Signal Frequency*(Signal Frequency/Output Frequency*(Figure of Merit)^2)/(1+sqrt(1+(Signal Frequency/Output Frequency*(Figure of Merit)^2)))^2

Noise Factor GaAs MESFET

Go Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance)

Maximum Operating Frequency

Go Maximum Operating Frequency = MESFET Cutoff Frequency/2*sqrt(Drain Resistance/(Source Resistance+Input Resistance+Gate Metallization Resistance))

Maximum Allowable Power

Go Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2

Transconductance in Saturation Region in MESFET

Go Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))

Maximum Power Gain of Microwave Transistor

Go Maximum Power Gain of a Microwave Transistor = (Transit Time Cutoff Frequency/Power Gain Frequency)^2*Output Impedance/Input Impedence

MESFET Cutoff Frequency

Go MESFET Cutoff Frequency = Transconductance of the MESFET/(2*pi*Gate Source Capacitance)

Maximum Frequency of Oscillation

Go Maximum Frequency of Oscillation = Saturation Velocity/(2*pi*Channel Length)

Transit Angle

Go Transit Angle = Angular frequency*Length of Drift Space/Carrier Drift Velocity

Noise Factor GaAs MESFET Formula

Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance)
NF = 1+2*ω*C_gs/G_m*sqrt((R_s-R_gate)/R_i)

Why is Noise Factor important in GaAs MESFETs?

Noise Factor is crucial in communication systems as it directly affects the quality of the received signal. Lower noise factor values indicate better performance and less contribution to the overall noise figure of the system.

How to Calculate Noise Factor GaAs MESFET?

Noise Factor GaAs MESFET calculator uses Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance) to calculate the Noise Factor, The Noise factor GaAs MESFET formula is defined as a measure of how much the device contributes to the overall noise in a communication system. Noise Factor is denoted by NF symbol.

How to calculate Noise Factor GaAs MESFET using this online calculator? To use this online calculator for Noise Factor GaAs MESFET, enter Angular frequency (ω), Gate Source Capacitance (C_gs), Transconductance of the MESFET (G_m), Source Resistance (R_s), Gate Resistance (R_gate) & Input Resistance (R_i) and hit the calculate button. Here is how the Noise Factor GaAs MESFET calculation can be explained with given input values -> 1.086769 = 1+2*53.25*5.6E-05/0.063072*sqrt((5-1.6)/4).

FAQ

What is Noise Factor GaAs MESFET?

The Noise factor GaAs MESFET formula is defined as a measure of how much the device contributes to the overall noise in a communication system and is represented as NF = 1+2*ω*C_gs/G_m*sqrt((R_s-R_gate)/R_i) or Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance). Angular frequency refers to the rate at which a sinusoidal waveform oscillates in the context of electrical circuits and signals, Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET), Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage, Source Resistance refers to the resistance associated with the source terminal of the transistor, Gate Resistance refers to the resistance associated with the gate terminal of a field-effect transistor (FET) & Input Resistance refers to the resistance presented to the input terminal of the device.

How to calculate Noise Factor GaAs MESFET?

The Noise factor GaAs MESFET formula is defined as a measure of how much the device contributes to the overall noise in a communication system is calculated using Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance). To calculate Noise Factor GaAs MESFET, you need Angular frequency (ω), Gate Source Capacitance (C_gs), Transconductance of the MESFET (G_m), Source Resistance (R_s), Gate Resistance (R_gate) & Input Resistance (R_i). With our tool, you need to enter the respective value for Angular frequency, Gate Source Capacitance, Transconductance of the MESFET, Source Resistance, Gate Resistance & Input Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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