Transconductance in Saturation Region in MESFET Calculator

✖Output Conductance is a parameter that characterizes the behavior of a field-effect transistor (FET) in its saturation region.ⓘ Output Conductance [g₀]			+10% -10%
✖Input Voltage is the electrical potential difference applied to the input terminals of a component or system.ⓘ Input Voltage [V_i]			+10% -10%
✖Threshold Voltage is referred as the voltage at which the transistor starts to conduct.ⓘ Threshold Voltage [V_G]			+10% -10%
✖Pinch-off Voltage represents the gate-source voltage at which the channel of the MESFET closes, or "pinches off" .ⓘ Pinch-off Voltage [V_p]			+10% -10%

✖Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage.ⓘ Transconductance in Saturation Region in MESFET [G_m]

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Transconductance in Saturation Region in MESFET

Formula

`"G"_{"m"} = "g"_{"0"}*(1-sqrt(("V"_{"i"}-"V"_{"G"})/"V"_{"p"}))`

Example

`"0.063072S"="0.152S"*(1-sqrt(("2.25V"-"1.562V")/"2.01V"))`

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Transconductance in Saturation Region in MESFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))
G_m = g₀*(1-sqrt((V_i-V_G)/V_p))
This formula uses 1 Functions, 5 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Transconductance of the MESFET - (Measured in Siemens) - Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage.
Output Conductance - (Measured in Siemens) - Output Conductance is a parameter that characterizes the behavior of a field-effect transistor (FET) in its saturation region.
Input Voltage - (Measured in Volt) - Input Voltage is the electrical potential difference applied to the input terminals of a component or system.
Threshold Voltage - (Measured in Volt) - Threshold Voltage is referred as the voltage at which the transistor starts to conduct.
Pinch-off Voltage - (Measured in Volt) - Pinch-off Voltage represents the gate-source voltage at which the channel of the MESFET closes, or "pinches off" .

STEP 1: Convert Input(s) to Base Unit

Output Conductance: 0.152 Siemens --> 0.152 Siemens No Conversion Required
Input Voltage: 2.25 Volt --> 2.25 Volt No Conversion Required
Threshold Voltage: 1.562 Volt --> 1.562 Volt No Conversion Required
Pinch-off Voltage: 2.01 Volt --> 2.01 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

G_m = g₀*(1-sqrt((V_i-V_G)/V_p)) --> 0.152*(1-sqrt((2.25-1.562)/2.01))

Evaluating ... ...

G_m = 0.0630717433777618

STEP 3: Convert Result to Output's Unit

0.0630717433777618 Siemens --> No Conversion Required

FINAL ANSWER

0.0630717433777618 ≈ 0.063072 Siemens <-- Transconductance of the MESFET

(Calculation completed in 00.004 seconds)

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Power gain of down converter given Degradation Factor

Go Power gain of down converter = Signal Frequency/Output Frequency*(Signal Frequency/Output Frequency*(Figure of Merit)^2)/(1+sqrt(1+(Signal Frequency/Output Frequency*(Figure of Merit)^2)))^2

Gain Degradation Factor for MESFET

Go Gain Degradation Factor = Output Frequency/Signal Frequency*(Signal Frequency/Output Frequency*(Figure of Merit)^2)/(1+sqrt(1+(Signal Frequency/Output Frequency*(Figure of Merit)^2)))^2

Noise Factor GaAs MESFET

Go Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance)

Maximum Operating Frequency

Go Maximum Operating Frequency = MESFET Cutoff Frequency/2*sqrt(Drain Resistance/(Source Resistance+Input Resistance+Gate Metallization Resistance))

Maximum Allowable Power

Go Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2

Transconductance in Saturation Region in MESFET

Go Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))

Maximum Power Gain of Microwave Transistor

Go Maximum Power Gain of a Microwave Transistor = (Transit Time Cutoff Frequency/Power Gain Frequency)^2*Output Impedance/Input Impedence

MESFET Cutoff Frequency

Go MESFET Cutoff Frequency = Transconductance of the MESFET/(2*pi*Gate Source Capacitance)

Maximum Frequency of Oscillation

Go Maximum Frequency of Oscillation = Saturation Velocity/(2*pi*Channel Length)

Transit Angle

Go Transit Angle = Angular frequency*Length of Drift Space/Carrier Drift Velocity

Transconductance in Saturation Region in MESFET Formula

Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))
G_m = g₀*(1-sqrt((V_i-V_G)/V_p))

Why is transconductance important in MESFET amplifiers?

Transconductance determines the gain of MESFET-based amplifiers. Higher transconductance generally leads to higher gain, making it a crucial parameter for amplifier design.

How to Calculate Transconductance in Saturation Region in MESFET?

Transconductance in Saturation Region in MESFET calculator uses Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)) to calculate the Transconductance of the MESFET, The Transconductance in Saturation Region in MESFET formula is defined as measures the sensitivity of the drain current (Id) to changes in the gate-source voltage (Vgs) when the transistor is operating in its linear or small-signal region. Transconductance of the MESFET is denoted by G_m symbol.

How to calculate Transconductance in Saturation Region in MESFET using this online calculator? To use this online calculator for Transconductance in Saturation Region in MESFET, enter Output Conductance (g₀), Input Voltage (V_i), Threshold Voltage (V_G) & Pinch-off Voltage (V_p) and hit the calculate button. Here is how the Transconductance in Saturation Region in MESFET calculation can be explained with given input values -> 0.063072 = 0.152*(1-sqrt((2.25-1.562)/2.01)).

FAQ

What is Transconductance in Saturation Region in MESFET?

The Transconductance in Saturation Region in MESFET formula is defined as measures the sensitivity of the drain current (Id) to changes in the gate-source voltage (Vgs) when the transistor is operating in its linear or small-signal region and is represented as G_m = g₀*(1-sqrt((V_i-V_G)/V_p)) or Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)). Output Conductance is a parameter that characterizes the behavior of a field-effect transistor (FET) in its saturation region, Input Voltage is the electrical potential difference applied to the input terminals of a component or system, Threshold Voltage is referred as the voltage at which the transistor starts to conduct & Pinch-off Voltage represents the gate-source voltage at which the channel of the MESFET closes, or "pinches off" .

How to calculate Transconductance in Saturation Region in MESFET?

The Transconductance in Saturation Region in MESFET formula is defined as measures the sensitivity of the drain current (Id) to changes in the gate-source voltage (Vgs) when the transistor is operating in its linear or small-signal region is calculated using Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)). To calculate Transconductance in Saturation Region in MESFET, you need Output Conductance (g₀), Input Voltage (V_i), Threshold Voltage (V_G) & Pinch-off Voltage (V_p). With our tool, you need to enter the respective value for Output Conductance, Input Voltage, Threshold Voltage & Pinch-off Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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