Transconductance in Saturation Region in MESFET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))
Gm = g0*(1-sqrt((Vi-VG)/Vp))
This formula uses 1 Functions, 5 Variables
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
Variables Used
Transconductance of the MESFET - (Measured in Siemens) - Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage.
Output Conductance - (Measured in Siemens) - Output Conductance is a parameter that characterizes the behavior of a field-effect transistor (FET) in its saturation region.
Input Voltage - (Measured in Volt) - Input Voltage is the electrical potential difference applied to the input terminals of a component or system.
Threshold Voltage - (Measured in Volt) - Threshold Voltage is referred as the voltage at which the transistor starts to conduct.
Pinch-off Voltage - (Measured in Volt) - Pinch-off Voltage represents the gate-source voltage at which the channel of the MESFET closes, or "pinches off" .
STEP 1: Convert Input(s) to Base Unit
Output Conductance: 0.152 Siemens --> 0.152 Siemens No Conversion Required
Input Voltage: 2.25 Volt --> 2.25 Volt No Conversion Required
Threshold Voltage: 1.562 Volt --> 1.562 Volt No Conversion Required
Pinch-off Voltage: 2.01 Volt --> 2.01 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Gm = g0*(1-sqrt((Vi-VG)/Vp)) --> 0.152*(1-sqrt((2.25-1.562)/2.01))
Evaluating ... ...
Gm = 0.0630717433777618
STEP 3: Convert Result to Output's Unit
0.0630717433777618 Siemens --> No Conversion Required
FINAL ANSWER
0.0630717433777618 0.063072 Siemens <-- Transconductance of the MESFET
(Calculation completed in 00.008 seconds)

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Transistor Amplifiers Calculators

Maximum Operating Frequency
​ LaTeX ​ Go Maximum Operating Frequency = MESFET Cutoff Frequency/2*sqrt(Drain Resistance/(Source Resistance+Input Resistance+Gate Metallization Resistance))
Transconductance in Saturation Region in MESFET
​ LaTeX ​ Go Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))
MESFET Cutoff Frequency
​ LaTeX ​ Go MESFET Cutoff Frequency = Transconductance of the MESFET/(2*pi*Gate Source Capacitance)
Maximum Frequency of Oscillation
​ LaTeX ​ Go Maximum Frequency of Oscillation = Saturation Velocity/(2*pi*Channel Length)

Transconductance in Saturation Region in MESFET Formula

​LaTeX ​Go
Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))
Gm = g0*(1-sqrt((Vi-VG)/Vp))

Why is transconductance important in MESFET amplifiers?

Transconductance determines the gain of MESFET-based amplifiers. Higher transconductance generally leads to higher gain, making it a crucial parameter for amplifier design.

How to Calculate Transconductance in Saturation Region in MESFET?

Transconductance in Saturation Region in MESFET calculator uses Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)) to calculate the Transconductance of the MESFET, The Transconductance in Saturation Region in MESFET formula is defined as measures the sensitivity of the drain current (Id) to changes in the gate-source voltage (Vgs) when the transistor is operating in its linear or small-signal region. Transconductance of the MESFET is denoted by Gm symbol.

How to calculate Transconductance in Saturation Region in MESFET using this online calculator? To use this online calculator for Transconductance in Saturation Region in MESFET, enter Output Conductance (g0), Input Voltage (Vi), Threshold Voltage (VG) & Pinch-off Voltage (Vp) and hit the calculate button. Here is how the Transconductance in Saturation Region in MESFET calculation can be explained with given input values -> 0.063072 = 0.152*(1-sqrt((2.25-1.562)/2.01)).

FAQ

What is Transconductance in Saturation Region in MESFET?
The Transconductance in Saturation Region in MESFET formula is defined as measures the sensitivity of the drain current (Id) to changes in the gate-source voltage (Vgs) when the transistor is operating in its linear or small-signal region and is represented as Gm = g0*(1-sqrt((Vi-VG)/Vp)) or Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)). Output Conductance is a parameter that characterizes the behavior of a field-effect transistor (FET) in its saturation region, Input Voltage is the electrical potential difference applied to the input terminals of a component or system, Threshold Voltage is referred as the voltage at which the transistor starts to conduct & Pinch-off Voltage represents the gate-source voltage at which the channel of the MESFET closes, or "pinches off" .
How to calculate Transconductance in Saturation Region in MESFET?
The Transconductance in Saturation Region in MESFET formula is defined as measures the sensitivity of the drain current (Id) to changes in the gate-source voltage (Vgs) when the transistor is operating in its linear or small-signal region is calculated using Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)). To calculate Transconductance in Saturation Region in MESFET, you need Output Conductance (g0), Input Voltage (Vi), Threshold Voltage (VG) & Pinch-off Voltage (Vp). With our tool, you need to enter the respective value for Output Conductance, Input Voltage, Threshold Voltage & Pinch-off Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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