Ohmic Region Drain Current of FET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2)))
Id = Go*(Vds+3/2*((Ψ0+V(g-s)-Vds)^(3/2)-(Ψ0+V(g-s))^(3/2))/((Ψ0+Voff)^(1/2)))
This formula uses 6 Variables
Variables Used
Drain Current - (Measured in Ampere) - Drain Current is the current that flow through the drain junction of the MOSFET and IGBT.
Channel Conductance - (Measured in Siemens) - Channel Conductance is the measure of how well the channel of an FET conducts current. It is determined by the mobility of the charge carriers in the channel.
Drain to Source Voltage - (Measured in Volt) - Drain to Source Voltage controls the flow of current through the JFET. The higher the drain-to-source voltage, the more current will flow through the JFET.
Psi - (Measured in Pascal) - Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.
Gain to Source Voltage - (Measured in Volt) - Gain to Source Voltage of a JFET is the ratio of the change in drain voltage to the change in source voltage.
Pinch OFF Voltage - (Measured in Volt) - Pinch OFF Voltage is the voltage at which the channel of a field-effect transistor (FET) becomes so narrow that it effectively closes, preventing any further current flow.
STEP 1: Convert Input(s) to Base Unit
Channel Conductance: 0.00167 Siemens --> 0.00167 Siemens No Conversion Required
Drain to Source Voltage: 0.2 Volt --> 0.2 Volt No Conversion Required
Psi: 0.01859 Kilopascal --> 18.59 Pascal (Check conversion ​here)
Gain to Source Voltage: 0.0039 Volt --> 0.0039 Volt No Conversion Required
Pinch OFF Voltage: 100.66 Volt --> 100.66 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Id = Go*(Vds+3/2*((Ψ0+V(g-s)-Vds)^(3/2)-(Ψ0+V(g-s))^(3/2))/((Ψ0+Voff)^(1/2))) --> 0.00167*(0.2+3/2*((18.59+0.0039-0.2)^(3/2)-(18.59+0.0039)^(3/2))/((18.59+100.66)^(1/2)))
Evaluating ... ...
Id = 3.80532912657331E-05
STEP 3: Convert Result to Output's Unit
3.80532912657331E-05 Ampere --> No Conversion Required
FINAL ANSWER
3.80532912657331E-05 3.8E-5 Ampere <-- Drain Current
(Calculation completed in 00.004 seconds)

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Acharya institute of technology (AIT), Bengaluru
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9 FET Calculators

Ohmic Region Drain Current of FET
​ Go Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2)))
Transconductance of FET
​ Go Forward Transconductance = (2*Drain Current of Zero Bias)/Pinch OFF Voltage*(1-Gain to Source Voltage/Pinch OFF Voltage)
Drain Source Voltage of FET
​ Go Drain to Source Voltage = Supply Voltage at Drain-Drain Current*(Drain Resistance+Source Resistance)
Gate Substrate Capacitance of FET
​ Go Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2)
Drain Current of FET
​ Go Drain Current = Drain Current of Zero Bias*(1-Gain to Source Voltage/Cuttoff Gain to Source Voltage)^2
Gate Source Capacitance of FET
​ Go Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3)
Gate Drain Capacitance of FET
​ Go Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3)
Pinch off Voltage of FET
​ Go Pinch OFF Voltage = Pinch OFF Drain to Source Voltage-Gain to Source Voltage
Voltage Gain of FET
​ Go Voltage Gain = -Forward Transconductance*Drain Resistance

Ohmic Region Drain Current of FET Formula

Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2)))
Id = Go*(Vds+3/2*((Ψ0+V(g-s)-Vds)^(3/2)-(Ψ0+V(g-s))^(3/2))/((Ψ0+Voff)^(1/2)))

What is Ohmic Region Drain Current of FET ?

The "Ohmic region" of a Field-Effect Transistor (FET) refers to a specific operating mode in which the FET behaves like a simple resistive element, and the drain current is directly proportional to the drain-source voltage. This region is also sometimes called the "linear region" or "triode region." In the Ohmic region, the FET is operating as a voltage-controlled resistor. The Ohmic region is often used in FET-based amplifier circuits, where the FET is biased in such a way that it exhibits linear characteristics, allowing for amplification of small input signals while avoiding distortion.

How to Calculate Ohmic Region Drain Current of FET?

Ohmic Region Drain Current of FET calculator uses Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2))) to calculate the Drain Current, Ohmic Region Drain Current of FET is the drain current that flows when the drain-to-source voltage is small and the gate voltage is zero. In this region, the drain current is proportional to the drain-to-source voltage and the channel conductance of the FET. In a voltage amplifier, the ohmic region drain current of an FET is used to generate a voltage gain. The FET is biased in the ohmic region so that it behaves like a linear resistor. The input voltage is applied to the gate of the FET and the output voltage is taken from the drain of the FET. The voltage gain of the amplifier is determined by the channel conductance of the FET and the load resistance. Drain Current is denoted by Id symbol.

How to calculate Ohmic Region Drain Current of FET using this online calculator? To use this online calculator for Ohmic Region Drain Current of FET, enter Channel Conductance (Go), Drain to Source Voltage (Vds), Psi 0), Gain to Source Voltage (V(g-s)) & Pinch OFF Voltage (Voff) and hit the calculate button. Here is how the Ohmic Region Drain Current of FET calculation can be explained with given input values -> -1.9E-5 = 0.00167*(0.2+3/2*((18.59+0.0039-0.2)^(3/2)-(18.59+0.0039)^(3/2))/((18.59+100.66)^(1/2))).

FAQ

What is Ohmic Region Drain Current of FET?
Ohmic Region Drain Current of FET is the drain current that flows when the drain-to-source voltage is small and the gate voltage is zero. In this region, the drain current is proportional to the drain-to-source voltage and the channel conductance of the FET. In a voltage amplifier, the ohmic region drain current of an FET is used to generate a voltage gain. The FET is biased in the ohmic region so that it behaves like a linear resistor. The input voltage is applied to the gate of the FET and the output voltage is taken from the drain of the FET. The voltage gain of the amplifier is determined by the channel conductance of the FET and the load resistance and is represented as Id = Go*(Vds+3/2*((Ψ0+V(g-s)-Vds)^(3/2)-(Ψ0+V(g-s))^(3/2))/((Ψ0+Voff)^(1/2))) or Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2))). Channel Conductance is the measure of how well the channel of an FET conducts current. It is determined by the mobility of the charge carriers in the channel, Drain to Source Voltage controls the flow of current through the JFET. The higher the drain-to-source voltage, the more current will flow through the JFET, Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor, Gain to Source Voltage of a JFET is the ratio of the change in drain voltage to the change in source voltage & Pinch OFF Voltage is the voltage at which the channel of a field-effect transistor (FET) becomes so narrow that it effectively closes, preventing any further current flow.
How to calculate Ohmic Region Drain Current of FET?
Ohmic Region Drain Current of FET is the drain current that flows when the drain-to-source voltage is small and the gate voltage is zero. In this region, the drain current is proportional to the drain-to-source voltage and the channel conductance of the FET. In a voltage amplifier, the ohmic region drain current of an FET is used to generate a voltage gain. The FET is biased in the ohmic region so that it behaves like a linear resistor. The input voltage is applied to the gate of the FET and the output voltage is taken from the drain of the FET. The voltage gain of the amplifier is determined by the channel conductance of the FET and the load resistance is calculated using Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2))). To calculate Ohmic Region Drain Current of FET, you need Channel Conductance (Go), Drain to Source Voltage (Vds), Psi 0), Gain to Source Voltage (V(g-s)) & Pinch OFF Voltage (Voff). With our tool, you need to enter the respective value for Channel Conductance, Drain to Source Voltage, Psi, Gain to Source Voltage & Pinch OFF Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Drain Current?
In this formula, Drain Current uses Channel Conductance, Drain to Source Voltage, Psi, Gain to Source Voltage & Pinch OFF Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Drain Current = Drain Current of Zero Bias*(1-Gain to Source Voltage/Cuttoff Gain to Source Voltage)^2
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