Permittivity of Oxide Layer Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

CMOS Circuit Characteristics

Array Datapath Subsystem

CMOS Delay Characteristics

CMOS Design Characteristics

CMOS Inverters

CMOS Power Metrics

CMOS Special Purpose Subsystem

CMOS Time Characteristics

✖The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.ⓘ Oxide Layer Thickness [t_ox]			+10% -10%
✖Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).ⓘ Input Gate Capacitance [C_in]			+10% -10%
✖Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.ⓘ Gate Width [W_g]			+10% -10%
✖Length of Gate is the measurement or extent of something from end to end.ⓘ Length of Gate [L_g]			+10% -10%

✖Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.ⓘ Permittivity of Oxide Layer [ε_ox]

⎘ Copy

👎

Formula

✖

Permittivity of Oxide Layer

Formula

`"ε"_{"ox"} = "t"_{"ox"}*"C"_{"in"}/("W"_{"g"}*"L"_{"g"})`

Example

`"149.7994μF/mm"="4.98mm"*"60.01μF"/("0.285mm"*"7mm")`

Calculator

LaTeX

Reset

👍

Download CMOS Circuit Characteristics Formulas PDF

Permittivity of Oxide Layer Solution

STEP 0: Pre-Calculation Summary

Formula Used

Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
ε_ox = t_ox*C_in/(W_g*L_g)
This formula uses 5 Variables

Variables Used

Permittivity of Oxide Layer - (Measured in Farad per Meter) - Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.
Oxide Layer Thickness - (Measured in Meter) - The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.
Input Gate Capacitance - (Measured in Farad) - Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).
Gate Width - (Measured in Meter) - Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.
Length of Gate - (Measured in Meter) - Length of Gate is the measurement or extent of something from end to end.

STEP 1: Convert Input(s) to Base Unit

Oxide Layer Thickness: 4.98 Millimeter --> 0.00498 Meter (Check conversion here)
Input Gate Capacitance: 60.01 Microfarad --> 6.001E-05 Farad (Check conversion here)
Gate Width: 0.285 Millimeter --> 0.000285 Meter (Check conversion here)
Length of Gate: 7 Millimeter --> 0.007 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

ε_ox = t_ox*C_in/(W_g*L_g) --> 0.00498*6.001E-05/(0.000285*0.007)

Evaluating ... ...

ε_ox = 0.149799398496241

STEP 3: Convert Result to Output's Unit

0.149799398496241 Farad per Meter -->149.799398496241 Microfarad per Millimeter (Check conversion here)

FINAL ANSWER

149.799398496241 ≈ 149.7994 Microfarad per Millimeter <-- Permittivity of Oxide Layer

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » CMOS Design and Applications » CMOS Circuit Characteristics » Permittivity of Oxide Layer

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< 15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS

Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)

Permittivity of Oxide Layer

Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)

Oxide Layer Thickness

Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance

Width of Gate

Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)

Sidewall Perimeter of Source Diffusion

Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)

Critical Electric Field

Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron

Transition Width of CMOS

Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance

Effective Channel Length

Go Effective Channel Length = PN Junction Length-Depletion Region Width

Depletion Region Width

Go Depletion Region Width = PN Junction Length-Effective Channel Length

PN Junction Length

Go PN Junction Length = Depletion Region Width+Effective Channel Length

CMOS Mean Free Path

Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field

Voltage at Minimum EDP

Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)

CMOS Critical Voltage

Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path

Width of Source Diffusion

Go Transition Width = Area of Source Diffusion/Length of Source

Area of Source Diffusion

Go Area of Source Diffusion = Length of Source*Transition Width

Permittivity of Oxide Layer Formula

Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
ε_ox = t_ox*C_in/(W_g*L_g)

What are the regions of operation in MOS transistors?

MOS transistors have three regions of operation which includes, cutoff or subthreshold region, linear region and saturation region.

How to Calculate Permittivity of Oxide Layer?

Permittivity of Oxide Layer calculator uses Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate) to calculate the Permittivity of Oxide Layer, The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field. Permittivity of Oxide Layer is denoted by ε_ox symbol.

How to calculate Permittivity of Oxide Layer using this online calculator? To use this online calculator for Permittivity of Oxide Layer, enter Oxide Layer Thickness (t_ox), Input Gate Capacitance (C_in), Gate Width (W_g) & Length of Gate (L_g) and hit the calculate button. Here is how the Permittivity of Oxide Layer calculation can be explained with given input values -> 149799.4 = 0.00498*6.001E-05/(0.000285*0.007).

FAQ

What is Permittivity of Oxide Layer?

The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field and is represented as ε_ox = t_ox*C_in/(W_g*L_g) or Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate). The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET, Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground), Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS & Length of Gate is the measurement or extent of something from end to end.

How to calculate Permittivity of Oxide Layer?

The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field is calculated using Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate). To calculate Permittivity of Oxide Layer, you need Oxide Layer Thickness (t_ox), Input Gate Capacitance (C_in), Gate Width (W_g) & Length of Gate (L_g). With our tool, you need to enter the respective value for Oxide Layer Thickness, Input Gate Capacitance, Gate Width & Length of Gate and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search