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Permittivity of Oxide Layer Solution

STEP 0: Pre-Calculation Summary
Formula Used
permittivity_of_oxide_layer = Oxide thickness*Gate Capacitance/(transition width*Gate length)
εox = tox*Cg/(W*L)
This formula uses 4 Variables
Variables Used
Oxide thickness - The oxide thickness tox is determined by the process technology used to fabricate the MOSFET. (Measured in Nanometer)
Gate Capacitance - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor. (Measured in Farad)
transition width - transition width As the drain-to-source voltage increases, the triode region transitions to the saturation (Measured in Nanometer)
Gate length - Gate length is the measurement or extent of something from end to end. (Measured in Meter)
STEP 1: Convert Input(s) to Base Unit
Oxide thickness: 4 Nanometer --> 4E-09 Meter (Check conversion here)
Gate Capacitance: 4 Farad --> 4 Farad No Conversion Required
transition width: 3 Nanometer --> 3E-09 Meter (Check conversion here)
Gate length: 20 Meter --> 20 Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
εox = tox*Cg/(W*L) --> 4E-09*4/(3E-09*20)
Evaluating ... ...
εox = 0.266666666666667
STEP 3: Convert Result to Output's Unit
0.266666666666667 --> No Conversion Required
FINAL ANSWER
0.266666666666667 <-- Permittivity of Oxide Layer
(Calculation completed in 00.016 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Permittivity of Oxide Layer Formula

permittivity_of_oxide_layer = Oxide thickness*Gate Capacitance/(transition width*Gate length)
εox = tox*Cg/(W*L)

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Static RAM makes use of six transistors. It also needs to be said that, under Static RAM, read and write operations make use of the same port.

How to Calculate Permittivity of Oxide Layer?

Permittivity of Oxide Layer calculator uses permittivity_of_oxide_layer = Oxide thickness*Gate Capacitance/(transition width*Gate length) to calculate the Permittivity of Oxide Layer, The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field. . Permittivity of Oxide Layer and is denoted by εox symbol.

How to calculate Permittivity of Oxide Layer using this online calculator? To use this online calculator for Permittivity of Oxide Layer, enter Oxide thickness (tox), Gate Capacitance (Cg), transition width (W) and Gate length (L) and hit the calculate button. Here is how the Permittivity of Oxide Layer calculation can be explained with given input values -> 0.266667 = 4E-09*4/(3E-09*20).

FAQ

What is Permittivity of Oxide Layer?
The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field. and is represented as εox = tox*Cg/(W*L) or permittivity_of_oxide_layer = Oxide thickness*Gate Capacitance/(transition width*Gate length). The oxide thickness tox is determined by the process technology used to fabricate the MOSFET, Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor, transition width As the drain-to-source voltage increases, the triode region transitions to the saturation and Gate length is the measurement or extent of something from end to end.
How to calculate Permittivity of Oxide Layer?
The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field. is calculated using permittivity_of_oxide_layer = Oxide thickness*Gate Capacitance/(transition width*Gate length). To calculate Permittivity of Oxide Layer, you need Oxide thickness (tox), Gate Capacitance (Cg), transition width (W) and Gate length (L). With our tool, you need to enter the respective value for Oxide thickness, Gate Capacitance, transition width and Gate length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Permittivity of Oxide Layer?
In this formula, Permittivity of Oxide Layer uses Oxide thickness, Gate Capacitance, transition width and Gate length. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Permittivity of Oxide Layer calculator used?
Among many, Permittivity of Oxide Layer calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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