Process Transconductance Parameter of PMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance
k'p = μp*Cox
This formula uses 3 Variables
Variables Used
Process Transconductance Parameter in PMOS - (Measured in Siemens) - The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Mobility of Holes in Channel - (Measured in Square Meter per Volt per Second) - Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
STEP 1: Convert Input(s) to Base Unit
Mobility of Holes in Channel: 2.66 Square Meter per Volt per Second --> 2.66 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 0.0008 Farad --> 0.0008 Farad No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
k'p = μp*Cox --> 2.66*0.0008
Evaluating ... ...
k'p = 0.002128
STEP 3: Convert Result to Output's Unit
0.002128 Siemens -->2.128 Millisiemens (Check conversion here)
FINAL ANSWER
2.128 Millisiemens <-- Process Transconductance Parameter in PMOS
(Calculation completed in 00.020 seconds)

Credits

Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 600+ more calculators!
Verified by Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
Urvi Rathod has verified this Calculator and 1900+ more calculators!

14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor
Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))
Drain Current in Triode Region of PMOS Transistor
Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)
Body Effect in PMOS
Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))
Drain Current in Triode Region of PMOS Transistor given Vsd
Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current in Saturation Region of PMOS Transistor
Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2
Backgate Effect Parameter in PMOS
Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance
Drain Current from Source to Drain
Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)
Inversion Layer Charge at Pinch-Off Condition in PMOS
Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)
Drain Current in Saturation Region of PMOS Transistor given Vov
Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2
Inversion Layer Charge in PMOS
Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)
Current in Inversion Channel of PMOS
Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)
Current in Inversion Channel of PMOS given Mobility
Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel
Overdrive Voltage of PMOS
Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)
Process Transconductance Parameter of PMOS
Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Process Transconductance Parameter of PMOS Formula

Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance
k'p = μp*Cox

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as an n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P

How to Calculate Process Transconductance Parameter of PMOS?

Process Transconductance Parameter of PMOS calculator uses Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance to calculate the Process Transconductance Parameter in PMOS, The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance. Process Transconductance Parameter in PMOS is denoted by k'p symbol.

How to calculate Process Transconductance Parameter of PMOS using this online calculator? To use this online calculator for Process Transconductance Parameter of PMOS, enter Mobility of Holes in Channel p) & Oxide Capacitance (Cox) and hit the calculate button. Here is how the Process Transconductance Parameter of PMOS calculation can be explained with given input values -> 2128 = 2.66*0.0008.

FAQ

What is Process Transconductance Parameter of PMOS?
The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance and is represented as k'p = μp*Cox or Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance. Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field & Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
How to calculate Process Transconductance Parameter of PMOS?
The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance is calculated using Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance. To calculate Process Transconductance Parameter of PMOS, you need Mobility of Holes in Channel p) & Oxide Capacitance (Cox). With our tool, you need to enter the respective value for Mobility of Holes in Channel & Oxide Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
Let Others Know
Facebook
Twitter
Reddit
LinkedIn
Email
WhatsApp
Copied!