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Process transconductance parameter of PMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
process_transconductance_parameter = Mobility of holes in channel*Oxide Capacitance
k'n = μp*Cox
This formula uses 2 Variables
Variables Used
Mobility of holes in channel - The mobility of holes in channel characterizes how quickly the holes can move through a metal or semiconductor when pulled by an electric field. (Measured in Meter² per Volt Second)
Oxide Capacitance - oxide capacitance is the capacitance of the parallel-plate capacitor per unit gate area (Measured in Farad)
STEP 1: Convert Input(s) to Base Unit
Mobility of holes in channel: 2 Meter² per Volt Second --> 2 Meter² per Volt Second No Conversion Required
Oxide Capacitance: 0.017 Farad --> 0.017 Farad No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
k'n = μp*Cox --> 2*0.017
Evaluating ... ...
k'n = 0.034
STEP 3: Convert Result to Output's Unit
0.034 Siemens -->0.034 Mho (Check conversion here)
FINAL ANSWER
0.034 Mho <-- Process transconductance parameter
(Calculation completed in 00.007 seconds)

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Process transconductance parameter of PMOS Formula

process_transconductance_parameter = Mobility of holes in channel*Oxide Capacitance
k'n = μp*Cox

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as an n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P

How to Calculate Process transconductance parameter of PMOS?

Process transconductance parameter of PMOS calculator uses process_transconductance_parameter = Mobility of holes in channel*Oxide Capacitance to calculate the Process transconductance parameter, The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance. Process transconductance parameter and is denoted by k'n symbol.

How to calculate Process transconductance parameter of PMOS using this online calculator? To use this online calculator for Process transconductance parameter of PMOS, enter Mobility of holes in channel p) and Oxide Capacitance (Cox) and hit the calculate button. Here is how the Process transconductance parameter of PMOS calculation can be explained with given input values -> 0.034 = 2*0.017.

FAQ

What is Process transconductance parameter of PMOS?
The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance and is represented as k'n = μp*Cox or process_transconductance_parameter = Mobility of holes in channel*Oxide Capacitance. The mobility of holes in channel characterizes how quickly the holes can move through a metal or semiconductor when pulled by an electric field and oxide capacitance is the capacitance of the parallel-plate capacitor per unit gate area.
How to calculate Process transconductance parameter of PMOS?
The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance is calculated using process_transconductance_parameter = Mobility of holes in channel*Oxide Capacitance. To calculate Process transconductance parameter of PMOS, you need Mobility of holes in channel p) and Oxide Capacitance (Cox). With our tool, you need to enter the respective value for Mobility of holes in channel and Oxide Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Process transconductance parameter?
In this formula, Process transconductance parameter uses Mobility of holes in channel and Oxide Capacitance. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • power_gain = voltage gain*current gain
  • transfer_func = Gain factor*Input capacitance*Source resistance*Input resistance/((1+(Source resistance/Input resistance))*(1+(Output resistance/Load resistance))*(Source resistance+Input resistance)*(Input capacitance*Source resistance*Source resistance+Source resistance+Input resistance))
  • transfer_func = Gain factor/(1+(Source resistance/Input resistance))*(1+(Output resistance/Load resistance))*(1+(Input capacitance*Input resistance*Source resistance/(Source resistance+Input resistance)))
  • trans_func_p = (Gain factor/(1+(Source resistance/Input resistance))*(1+(Output resistance/Load resistance)))/(1+(w stc/wₒ stc))
  • trans_func_p = (Gain factor/(1+(Source resistance/Input resistance))*(1+(Output resistance/Load resistance)))/(1-(wₒ stc/w stc))
  • magnitude_response = (modulus(Gain factor/(1+(Source resistance/Input resistance))*(1+(Output resistance/Load resistance))))/sqrt(1+(w stc/wₒ stc)^2)
  • magnitude_response = (modulus(Gain factor/(1+(Source resistance/Input resistance))*(1+(Output resistance/Load resistance))))/sqrt(1+(wₒ stc/w stc)^2)
  • output_signal = Power gain*input signal
  • power_delivered = (Positive dc voltage*Positive dc current)+(Negative dc voltage*Negative dc current)
  • amplifier_power_efficiency = 100*power delivered to load/dc power delivered to the amplifier
Where is the Process transconductance parameter of PMOS calculator used?
Among many, Process transconductance parameter of PMOS calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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