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Sheet Resistance of Layer Calculator

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✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]
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-10%
✖Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.ⓘ Electron Doping Silicon Mobility [μn]
+10%
-10%
✖Equilibrium Concentration of N-Type is equal to the density of donor atoms because the electrons for conduction are solely given by the donor atom.ⓘ Equilibrium Concentration of N-Type [Nd]
+10%
-10%
✖Thickness of Layer is often used for manufacturing casted parts to ensure that wall structure is designed with just the right amount of material.ⓘ Thickness of Layer [t]
+10%
-10%
✖Sheet Resistance is the resistance of a square piece of a thin material with contacts made to two opposite sides of the square.ⓘ Sheet Resistance of Layer [Rs]
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Formula
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Sheet Resistance of Layer

Formula
`"R"_{"s"} = 1/("q"*"μ"_{"n"}*"N"_{"d"}*"t")`

Example
`"0.116959Ω"=1/("5mC"*"0.38cm²/V*s"*"45/cm³"*"100cm")`

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Sheet Resistance of Layer Solution

STEP 0: Pre-Calculation Summary
Formula Used
Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)
Rs = 1/(q*μn*Nd*t)
This formula uses 5 Variables
Variables Used
Sheet Resistance - (Measured in Ohm) - Sheet Resistance is the resistance of a square piece of a thin material with contacts made to two opposite sides of the square.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Electron Doping Silicon Mobility - (Measured in Square Meter per Volt per Second) - Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.
Equilibrium Concentration of N-Type - (Measured in 1 per Cubic Meter) - Equilibrium Concentration of N-Type is equal to the density of donor atoms because the electrons for conduction are solely given by the donor atom.
Thickness of Layer - (Measured in Meter) - Thickness of Layer is often used for manufacturing casted parts to ensure that wall structure is designed with just the right amount of material.
STEP 1: Convert Input(s) to Base Unit
Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Electron Doping Silicon Mobility: 0.38 Square Centimeter per Volt Second --> 3.8E-05 Square Meter per Volt per Second (Check conversion here)
Equilibrium Concentration of N-Type: 45 1 per Cubic Centimeter --> 45000000 1 per Cubic Meter (Check conversion here)
Thickness of Layer: 100 Centimeter --> 1 Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Rs = 1/(q*μn*Nd*t) --> 1/(0.005*3.8E-05*45000000*1)
Evaluating ... ...
Rs = 0.116959064327485
STEP 3: Convert Result to Output's Unit
0.116959064327485 Ohm --> No Conversion Required
FINAL ANSWER
0.116959064327485 ≈ 0.116959 Ohm <-- Sheet Resistance
(Calculation completed in 00.020 seconds)
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Created by Rahul Gupta
Chandigarh University (CU), Mohali, Punjab
Rahul Gupta has created this Calculator and 25+ more calculators!
Verified by Parminder Singh
Chandigarh University (CU), Punjab
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13 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped
Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))
Impurity Atoms Per Unit Area
Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))
Conductivity of N-Type
Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))
Conductivity of P-Type
Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)
Collector-Base Capacitance
Go Collector Base Capacitance = Emitter Base Junction Area*sqrt((Charge*Permittivity*Doping Density)/(2*(Built In Potential+Reverse Bias Junction)))
Ohmic Conductivity of Impurity
Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)
Collector-Current of PNP Transistor
Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width
Saturation Current in Transistor
Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity
Sheet Resistance of Layer
Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)
Resistance of Diffused Layer
Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))
Current Density Hole
Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)
Impurity with Intrinsic Concentration
Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)
Transit Time of PNP Transistor
Go Transit Time = Base Width^2/(2*Diffusion Constant For PNP)

Sheet Resistance of Layer Formula

Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)
Rs = 1/(q*μn*Nd*t)

What is the sheet resistance of a semiconductor?

Sheet resistance is a critical electrical property, is used to characterize films of semiconducting and conducting materials. It is a measure of lateral resistance per square area of a film with uniform thickness, and quantifies the ability of electrical charge to travel in the plane of the film.

How to Calculate Sheet Resistance of Layer?

Sheet Resistance of Layer calculator uses Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer) to calculate the Sheet Resistance, The Sheet Resistance of Layers formula is influenced by factors such as the resistivity of the material, its thickness, and the area through which the current passes. In semiconductor processing, it's essential to control and optimize the sheet resistance to achieve desired electrical characteristics in different layers of the semiconductor devices, like the metal interconnect layers or polysilicon gates in transistors. Sheet Resistance is denoted by Rs symbol.

How to calculate Sheet Resistance of Layer using this online calculator? To use this online calculator for Sheet Resistance of Layer, enter Charge (q), Electron Doping Silicon Mobility (μn), Equilibrium Concentration of N-Type (Nd) & Thickness of Layer (t) and hit the calculate button. Here is how the Sheet Resistance of Layer calculation can be explained with given input values -> 0.116959 = 1/(0.005*3.8E-05*45000000*1).

FAQ

What is Sheet Resistance of Layer?
The Sheet Resistance of Layers formula is influenced by factors such as the resistivity of the material, its thickness, and the area through which the current passes. In semiconductor processing, it's essential to control and optimize the sheet resistance to achieve desired electrical characteristics in different layers of the semiconductor devices, like the metal interconnect layers or polysilicon gates in transistors and is represented as Rs = 1/(q*μn*Nd*t) or Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer). Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field, Equilibrium Concentration of N-Type is equal to the density of donor atoms because the electrons for conduction are solely given by the donor atom & Thickness of Layer is often used for manufacturing casted parts to ensure that wall structure is designed with just the right amount of material.
How to calculate Sheet Resistance of Layer?
The Sheet Resistance of Layers formula is influenced by factors such as the resistivity of the material, its thickness, and the area through which the current passes. In semiconductor processing, it's essential to control and optimize the sheet resistance to achieve desired electrical characteristics in different layers of the semiconductor devices, like the metal interconnect layers or polysilicon gates in transistors is calculated using Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer). To calculate Sheet Resistance of Layer, you need Charge (q), Electron Doping Silicon Mobility (μn), Equilibrium Concentration of N-Type (Nd) & Thickness of Layer (t). With our tool, you need to enter the respective value for Charge, Electron Doping Silicon Mobility, Equilibrium Concentration of N-Type & Thickness of Layer and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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