Short Channel Saturation Current VLSI Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure.ⓘ Channel Width [W_c]			+10% -10%
✖Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field.ⓘ Saturation Electron Drift Velocity [v_d(sat)]			+10% -10%
✖Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.ⓘ Oxide Capacitance per Unit Area [C_oxide]			+10% -10%
✖Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode.ⓘ Saturation Drain Source Voltage [V_Dsat]			+10% -10%

✖Short Channel Saturation Current is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode.ⓘ Short Channel Saturation Current VLSI [I_D(sat)]

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Formula

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Short Channel Saturation Current VLSI

Formula

`"I"_{"D(sat)"} = "W"_{"c"}*"v"_{"d(sat)"}*"C"_{"oxide"}*"V"_{"Dsat"}`

Example

`"527.25µA"="2.5μm"*"2e+7cm/s"*"0.0703μF/cm²"*"1.5V"`

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Short Channel Saturation Current VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat
This formula uses 5 Variables

Variables Used

Short Channel Saturation Current - (Measured in Ampere) - Short Channel Saturation Current is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode.
Channel Width - (Measured in Meter) - Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure.
Saturation Electron Drift Velocity - (Measured in Meter per Second) - Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field.
Oxide Capacitance per Unit Area - (Measured in Farad per Square Meter) - Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
Saturation Drain Source Voltage - (Measured in Volt) - Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode.

STEP 1: Convert Input(s) to Base Unit

Channel Width: 2.5 Micrometer --> 2.5E-06 Meter (Check conversion here)
Saturation Electron Drift Velocity: 20000000 Centimeter per Second --> 200000 Meter per Second (Check conversion here)
Oxide Capacitance per Unit Area: 0.0703 Microfarad per Square Centimeter --> 0.000703 Farad per Square Meter (Check conversion here)
Saturation Drain Source Voltage: 1.5 Volt --> 1.5 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat --> 2.5E-06*200000*0.000703*1.5

Evaluating ... ...

I_D(sat) = 0.00052725

STEP 3: Convert Result to Output's Unit

0.00052725 Ampere -->527.25 Microampere (Check conversion here)

FINAL ANSWER

527.25 Microampere <-- Short Channel Saturation Current

(Calculation completed in 00.007 seconds)

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Credits

Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Short Channel Saturation Current VLSI Formula

Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat

Why is Short Channel Saturation Current important in VLSI?

In short-channel devices, the saturation current may deviate from the ideal behavior due to phenomena like velocity saturation, drain-induced barrier lowering (DIBL), and other quantum mechanical effects. Understanding and managing these effects are crucial for accurate circuit design in advanced VLSI technologies.

How to Calculate Short Channel Saturation Current VLSI?

Short Channel Saturation Current VLSI calculator uses Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage to calculate the Short Channel Saturation Current, The Short Channel Saturation Current VLSI formula is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode. Short Channel Saturation Current is denoted by I_D(sat) symbol.

How to calculate Short Channel Saturation Current VLSI using this online calculator? To use this online calculator for Short Channel Saturation Current VLSI, enter Channel Width (W_c), Saturation Electron Drift Velocity (v_d(sat)), Oxide Capacitance per Unit Area (C_oxide) & Saturation Drain Source Voltage (V_Dsat) and hit the calculate button. Here is how the Short Channel Saturation Current VLSI calculation can be explained with given input values -> 5.3E+8 = 2.5E-06*200000*0.000703*1.5.

FAQ

What is Short Channel Saturation Current VLSI?

The Short Channel Saturation Current VLSI formula is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode and is represented as I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat or Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage. Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure, Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field, Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material & Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode.

How to calculate Short Channel Saturation Current VLSI?

The Short Channel Saturation Current VLSI formula is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode is calculated using Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage. To calculate Short Channel Saturation Current VLSI, you need Channel Width (W_c), Saturation Electron Drift Velocity (v_d(sat)), Oxide Capacitance per Unit Area (C_oxide) & Saturation Drain Source Voltage (V_Dsat). With our tool, you need to enter the respective value for Channel Width, Saturation Electron Drift Velocity, Oxide Capacitance per Unit Area & Saturation Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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