Sidewall Perimeter of Source Diffusion Calculator

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✖Transition Width is defined as the increase in width when drain-to-source voltage increases, resulting the triode region transitioning to the saturation region.ⓘ Transition Width [W]			+10% -10%
✖Length of Source is defined as the total length observed at the source junction of the MOSFET.ⓘ Length of Source [D_s]			+10% -10%

✖Sidewall Perimeter of Source Diffusion is defined as perimeter of source diffusion not including edge under gate.ⓘ Sidewall Perimeter of Source Diffusion [P_s]

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Sidewall Perimeter of Source Diffusion

Formula

`"P"_{"s"} = (2*"W")+(2*"D"_{"s"})`

Example

`"301.64mm"=(2*"89.82mm")+(2*"61mm")`

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Sidewall Perimeter of Source Diffusion Solution

STEP 0: Pre-Calculation Summary

Formula Used

Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
P_s = (2*W)+(2*D_s)
This formula uses 3 Variables

Variables Used

Sidewall Perimeter of Source Diffusion - (Measured in Meter) - Sidewall Perimeter of Source Diffusion is defined as perimeter of source diffusion not including edge under gate.
Transition Width - (Measured in Meter) - Transition Width is defined as the increase in width when drain-to-source voltage increases, resulting the triode region transitioning to the saturation region.
Length of Source - (Measured in Meter) - Length of Source is defined as the total length observed at the source junction of the MOSFET.

STEP 1: Convert Input(s) to Base Unit

Transition Width: 89.82 Millimeter --> 0.08982 Meter (Check conversion here)
Length of Source: 61 Millimeter --> 0.061 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

P_s = (2*W)+(2*D_s) --> (2*0.08982)+(2*0.061)

Evaluating ... ...

P_s = 0.30164

STEP 3: Convert Result to Output's Unit

0.30164 Meter -->301.64 Millimeter (Check conversion here)

FINAL ANSWER

301.64 Millimeter <-- Sidewall Perimeter of Source Diffusion

(Calculation completed in 00.004 seconds)

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< 15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS

Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)

Permittivity of Oxide Layer

Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)

Oxide Layer Thickness

Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance

Width of Gate

Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)

Sidewall Perimeter of Source Diffusion

Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)

Critical Electric Field

Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron

Transition Width of CMOS

Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance

Effective Channel Length

Go Effective Channel Length = PN Junction Length-Depletion Region Width

Depletion Region Width

Go Depletion Region Width = PN Junction Length-Effective Channel Length

PN Junction Length

Go PN Junction Length = Depletion Region Width+Effective Channel Length

Voltage at Minimum EDP

Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)

CMOS Critical Voltage

Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path

CMOS Mean Free Path

Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field

Width of Source Diffusion

Go Transition Width = Area of Source Diffusion/Length of Source

Area of Source Diffusion

Go Area of Source Diffusion = Length of Source*Transition Width

Sidewall Perimeter of Source Diffusion Formula

Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
P_s = (2*W)+(2*D_s)

What is MOS diffusion capacitance model?

The p–n junction between the source diffusion and the body contributes parasitic capacitance across the depletion region. The capacitance depends on both the area AS and sidewall perimeter PS of the source diffusion region. Because the depletion region thickness depends on the bias conditions, these parasitics are nonlinear.

How to Calculate Sidewall Perimeter of Source Diffusion?

Sidewall Perimeter of Source Diffusion calculator uses Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source) to calculate the Sidewall Perimeter of Source Diffusion, The Sidewall Perimeter of Source Diffusion formula is defined as perimeter of source diffusion not including edge under gate. Sidewall Perimeter of Source Diffusion is denoted by P_s symbol.

How to calculate Sidewall Perimeter of Source Diffusion using this online calculator? To use this online calculator for Sidewall Perimeter of Source Diffusion, enter Transition Width (W) & Length of Source (D_s) and hit the calculate button. Here is how the Sidewall Perimeter of Source Diffusion calculation can be explained with given input values -> 301640 = (2*0.08982)+(2*0.061).

FAQ

What is Sidewall Perimeter of Source Diffusion?

The Sidewall Perimeter of Source Diffusion formula is defined as perimeter of source diffusion not including edge under gate and is represented as P_s = (2*W)+(2*D_s) or Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source). Transition Width is defined as the increase in width when drain-to-source voltage increases, resulting the triode region transitioning to the saturation region & Length of Source is defined as the total length observed at the source junction of the MOSFET.

How to calculate Sidewall Perimeter of Source Diffusion?

The Sidewall Perimeter of Source Diffusion formula is defined as perimeter of source diffusion not including edge under gate is calculated using Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source). To calculate Sidewall Perimeter of Source Diffusion, you need Transition Width (W) & Length of Source (D_s). With our tool, you need to enter the respective value for Transition Width & Length of Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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