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## Credits

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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## Sidewall Perimeter Of Source Diffusion Solution

STEP 0: Pre-Calculation Summary
Formula Used
sidewall_perimeter_of_source_diffusion = 2*transition width+(2*length of source)
PS = 2*W+(2*D)
This formula uses 2 Variables
Variables Used
transition width - transition width As the drain-to-source voltage increases, the triode region transitions to the saturation (Measured in Nanometer)
length of source- length of source gate junction
STEP 1: Convert Input(s) to Base Unit
transition width: 3 Nanometer --> 3E-09 Meter (Check conversion here)
length of source: 3 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
PS = 2*W+(2*D) --> 2*3E-09+(2*3)
Evaluating ... ...
PS = 6.000000006
STEP 3: Convert Result to Output's Unit
6.000000006 --> No Conversion Required
FINAL ANSWER
6.000000006 <-- Sidewall Perimeter Of Source Diffusion(PS)
(Calculation completed in 00.016 seconds)

## < 10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

### Sidewall Perimeter Of Source Diffusion Formula

sidewall_perimeter_of_source_diffusion = 2*transition width+(2*length of source)
PS = 2*W+(2*D)

## Mention the capacitive effects formed in a P-N junction.?

There are mainly two types of capacitance formed in a PN junction. a. Diffusion Capacitance: The diffusion capacitance occurs in forward biased condition. b. Transition capacitance: Transition capacitance occurs in the reverse biased condition.

## How to Calculate Sidewall Perimeter Of Source Diffusion?

Sidewall Perimeter Of Source Diffusion calculator uses sidewall_perimeter_of_source_diffusion = 2*transition width+(2*length of source) to calculate the Sidewall Perimeter Of Source Diffusion(PS), The Sidewall Perimeter Of Source Diffusion formula is defined as perimeter of source diffusion not including edge under gate. Sidewall Perimeter Of Source Diffusion(PS) and is denoted by PS symbol.

How to calculate Sidewall Perimeter Of Source Diffusion using this online calculator? To use this online calculator for Sidewall Perimeter Of Source Diffusion, enter transition width (W) and length of source (D) and hit the calculate button. Here is how the Sidewall Perimeter Of Source Diffusion calculation can be explained with given input values -> 6 = 2*3E-09+(2*3).

### FAQ

What is Sidewall Perimeter Of Source Diffusion?
The Sidewall Perimeter Of Source Diffusion formula is defined as perimeter of source diffusion not including edge under gate and is represented as PS = 2*W+(2*D) or sidewall_perimeter_of_source_diffusion = 2*transition width+(2*length of source). transition width As the drain-to-source voltage increases, the triode region transitions to the saturation and length of source gate junction.
How to calculate Sidewall Perimeter Of Source Diffusion?
The Sidewall Perimeter Of Source Diffusion formula is defined as perimeter of source diffusion not including edge under gate is calculated using sidewall_perimeter_of_source_diffusion = 2*transition width+(2*length of source). To calculate Sidewall Perimeter Of Source Diffusion, you need transition width (W) and length of source (D). With our tool, you need to enter the respective value for transition width and length of source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Sidewall Perimeter Of Source Diffusion(PS)?
In this formula, Sidewall Perimeter Of Source Diffusion(PS) uses transition width and length of source. We can use 10 other way(s) to calculate the same, which is/are as follows -
• dynamic_power = Drain Voltage^2*frequency*Capacitance
• drain_voltage = sqrt(dynamic power/frequency*Capacitance)
• static_power = static current*Drain Voltage
• static_current = Static power/Drain Voltage
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
• threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
• potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
• potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
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