Subthreshold Slope Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.ⓘ Source Body Potential Difference [V_sb]			+10% -10%
✖DIBL coefficient in a cmos device is resprented typically on the order of 0.1.ⓘ DIBL Coefficient [η]			+10% -10%

✖Sub Threshold Slope is a feature of a MOSFET's current-voltage characteristic.ⓘ Subthreshold Slope [S]

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Formula

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Subthreshold Slope

Formula

`"S" = "V"_{"sb"}*"η"*ln(10)`

Example

`"0.626303"="1.36V"*"0.2"*ln(10)`

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Subthreshold Slope Solution

STEP 0: Pre-Calculation Summary

Formula Used

Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
S = V_sb*η*ln(10)
This formula uses 1 Functions, 3 Variables

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Sub Threshold Slope - Sub Threshold Slope is a feature of a MOSFET's current-voltage characteristic.
Source Body Potential Difference - (Measured in Volt) - Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.
DIBL Coefficient - DIBL coefficient in a cmos device is resprented typically on the order of 0.1.

STEP 1: Convert Input(s) to Base Unit

Source Body Potential Difference: 1.36 Volt --> 1.36 Volt No Conversion Required
DIBL Coefficient: 0.2 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

S = V_sb*η*ln(10) --> 1.36*0.2*ln(10)

Evaluating ... ...

S = 0.626303145294381

STEP 3: Convert Result to Output's Unit

0.626303145294381 --> No Conversion Required

FINAL ANSWER

0.626303145294381 ≈ 0.626303 <-- Sub Threshold Slope

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

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Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

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Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Subthreshold Slope Formula

Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
S = V_sb*η*ln(10)

What does subthreshold slope indicates?

The subthreshold slope indicates how much the gate voltage must drop to decrease the leakage current by an order of magnitude. A typical value is 100 mV/decade at room temperature.

How to Calculate Subthreshold Slope?

Subthreshold Slope calculator uses Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10) to calculate the Sub Threshold Slope, The Subthreshold slope formula is defined as a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour, though being controlled by the gate terminal, is similar to the exponentially decreasing current of a forward biased diode. Sub Threshold Slope is denoted by S symbol.

How to calculate Subthreshold Slope using this online calculator? To use this online calculator for Subthreshold Slope, enter Source Body Potential Difference (V_sb) & DIBL Coefficient (η) and hit the calculate button. Here is how the Subthreshold Slope calculation can be explained with given input values -> 4.91648 = 1.36*0.2*ln(10).

FAQ

What is Subthreshold Slope?

The Subthreshold slope formula is defined as a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour, though being controlled by the gate terminal, is similar to the exponentially decreasing current of a forward biased diode and is represented as S = V_sb*η*ln(10) or Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10). Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor & DIBL coefficient in a cmos device is resprented typically on the order of 0.1.

How to calculate Subthreshold Slope?

The Subthreshold slope formula is defined as a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour, though being controlled by the gate terminal, is similar to the exponentially decreasing current of a forward biased diode is calculated using Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10). To calculate Subthreshold Slope, you need Source Body Potential Difference (V_sb) & DIBL Coefficient (η). With our tool, you need to enter the respective value for Source Body Potential Difference & DIBL Coefficient and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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