Total Power Dissipated in NMOS Calculator

✖Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Drain Current in NMOS [I_d]			+10% -10%
✖ON channel resistance is the channel-on resistance value between the drain and the source for any standard Mosfet circuit.ⓘ ON Channel Resistance [R_on]			+10% -10%

✖Power dissipated refers to the energy that is converted into heat and lost in a circuit or system due to the presence of resistance, friction, or other forms of energy loss.ⓘ Total Power Dissipated in NMOS [P_D]

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Total Power Dissipated in NMOS

Formula

`"P"_{"D"} = "I"_{"d"}^2*"R"_{"on"}`

Example

`"1142.42mW"=("239mA")^2*"0.02kΩ"`

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Total Power Dissipated in NMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance
P_D = I_d^2*R_on
This formula uses 3 Variables

Variables Used

Power Dissipated - (Measured in Watt) - Power dissipated refers to the energy that is converted into heat and lost in a circuit or system due to the presence of resistance, friction, or other forms of energy loss.
Drain Current in NMOS - (Measured in Ampere) - Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
ON Channel Resistance - (Measured in Ohm) - ON channel resistance is the channel-on resistance value between the drain and the source for any standard Mosfet circuit.

STEP 1: Convert Input(s) to Base Unit

Drain Current in NMOS: 239 Milliampere --> 0.239 Ampere (Check conversion here)
ON Channel Resistance: 0.02 Kilohm --> 20 Ohm (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

P_D = I_d^2*R_on --> 0.239^2*20

Evaluating ... ...

P_D = 1.14242

STEP 3: Convert Result to Output's Unit

1.14242 Watt -->1142.42 Milliwatt (Check conversion here)

FINAL ANSWER

1142.42 Milliwatt <-- Power Dissipated

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » N-Channel Enhancement » Total Power Dissipated in NMOS

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Birsa Institute of Technology (BIT), Sindri

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Total Power Dissipated in NMOS Formula

Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance
P_D = I_d^2*R_on

What is power dissipated?

The definition of power dissipation is the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action. Such as the case with central processing units, power dissipation is a principal concern in computer architecture. Furthermore, power dissipation in resistors is considered a naturally occurring phenomenon. The fact remains that all resistors that are part of a circuit and have a voltage drop across them will dissipate electrical power. Moreover, this electrical power converts into heat energy, and therefore all resistors have a (power) rating. Also, a resistor’s power rating is a classification that parameterizes the maximum power that it can dissipate before it reaches critical failure.

How to Calculate Total Power Dissipated in NMOS?

Total Power Dissipated in NMOS calculator uses Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance to calculate the Power Dissipated, The total power dissipated in NMOS is equal to the product of square of drain current and drain-source on-channel resistance . It is denoted by Pd. Power Dissipated is denoted by P_D symbol.

How to calculate Total Power Dissipated in NMOS using this online calculator? To use this online calculator for Total Power Dissipated in NMOS, enter Drain Current in NMOS (I_d) & ON Channel Resistance (R_on) and hit the calculate button. Here is how the Total Power Dissipated in NMOS calculation can be explained with given input values -> 1.1E+6 = 0.239^2*20.

FAQ

What is Total Power Dissipated in NMOS?

The total power dissipated in NMOS is equal to the product of square of drain current and drain-source on-channel resistance . It is denoted by Pd and is represented as P_D = I_d^2*R_on or Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance. Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET) & ON channel resistance is the channel-on resistance value between the drain and the source for any standard Mosfet circuit.

How to calculate Total Power Dissipated in NMOS?

The total power dissipated in NMOS is equal to the product of square of drain current and drain-source on-channel resistance . It is denoted by Pd is calculated using Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance. To calculate Total Power Dissipated in NMOS, you need Drain Current in NMOS (I_d) & ON Channel Resistance (R_on). With our tool, you need to enter the respective value for Drain Current in NMOS & ON Channel Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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