Zero Bias Sidewall Junction Capacitance Calculator

✖Sidewall Doping Density refers to the concentration of dopant atoms along the sidewalls of the transistor structure.ⓘ Sidewall Doping Density [N_A(sw)]			+10% -10%
✖Doping Concentration of Donor refers to the concentration of donor atoms intentionally added to a semiconductor material.ⓘ Doping Concentration of Donor [N_D]			+10% -10%
✖Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure.ⓘ Built in Potential of Sidewall Junctions [Φ_osw]			+10% -10%

✖Zero Bias Sidewall Junction Potential is the built-in potential in the sidewall junction of certain transistor structures.ⓘ Zero Bias Sidewall Junction Capacitance [C_j0sw]

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Formula

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Zero Bias Sidewall Junction Capacitance

Formula

`"C"_{"j0sw"} = sqrt(("[Permitivity-silicon]"*"[Charge-e]")/2*(("N"_{"A(sw)"}*"N"_{"D"})/("N"_{"A(sw)"}+"N"_{"D"}))*1/"Φ"_{"osw"})`

Example

`"1E^-7F"=sqrt(("[Permitivity-silicon]"*"[Charge-e]")/2*(("0.35electrons/m³"*"3.01electrons/cm³")/("0.35electrons/m³"+"3.01electrons/cm³"))*1/"0.000032V")`

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Zero Bias Sidewall Junction Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions)
C_j0sw = sqrt(([Permitivity-silicon]*[Charge-e])/2*((N_A(sw)*N_D)/(N_A(sw)+N_D))*1/Φ_osw)
This formula uses 2 Constants, 1 Functions, 4 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Zero Bias Sidewall Junction Potential - (Measured in Farad) - Zero Bias Sidewall Junction Potential is the built-in potential in the sidewall junction of certain transistor structures.
Sidewall Doping Density - (Measured in Electrons per Cubic Meter) - Sidewall Doping Density refers to the concentration of dopant atoms along the sidewalls of the transistor structure.
Doping Concentration of Donor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Donor refers to the concentration of donor atoms intentionally added to a semiconductor material.
Built in Potential of Sidewall Junctions - (Measured in Volt) - Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure.

STEP 1: Convert Input(s) to Base Unit

Sidewall Doping Density: 0.35 Electrons per Cubic Meter --> 0.35 Electrons per Cubic Meter No Conversion Required
Doping Concentration of Donor: 3.01 Electrons per Cubic Centimeter --> 3010000 Electrons per Cubic Meter (Check conversion here)
Built in Potential of Sidewall Junctions: 3.2E-05 Volt --> 3.2E-05 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_j0sw = sqrt(([Permitivity-silicon]*[Charge-e])/2*((N_A(sw)*N_D)/(N_A(sw)+N_D))*1/Φ_osw) --> sqrt(([Permitivity-silicon]*[Charge-e])/2*((0.35*3010000)/(0.35+3010000))*1/3.2E-05)

Evaluating ... ...

C_j0sw = 1.01249324812588E-07

STEP 3: Convert Result to Output's Unit

1.01249324812588E-07 Farad --> No Conversion Required

FINAL ANSWER

1.01249324812588E-07 ≈ 1E-7 Farad <-- Zero Bias Sidewall Junction Potential

(Calculation completed in 00.004 seconds)

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< 2 MOSFET Amplifiers Calculators

Zero Bias Sidewall Junction Capacitance

Go Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions)

Zero Bias Junction Capacitance

Go Zero Bias Junction Capacitance = sqrt((Permitivity of Silicon*[Charge-e])/2*((Doping Concentration of Acceptor*Doping Concentration of Donor)/(Doping Concentration of Acceptor+Doping Concentration of Donor))*1/Built in Junction Potential)

Zero Bias Sidewall Junction Capacitance Formula

How does sidewall junction potential relate to semiconductor devices?

In semiconductor devices, sidewalls may play a role in defining the device's structure, but the term "sidewall junction potential" is not a standard term. Typically, junction potential is associated with the interface between different semiconductor regions, like the p-n junction in a diode or the source/drain junctions in a MOSFET.

How to Calculate Zero Bias Sidewall Junction Capacitance?

Zero Bias Sidewall Junction Capacitance calculator uses Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions) to calculate the Zero Bias Sidewall Junction Potential, The Zero Bias Sidewall Junction Capacitance formula is defined as the built-in potential in the sidewall junction of certain transistor structures. Zero Bias Sidewall Junction Potential is denoted by C_j0sw symbol.

How to calculate Zero Bias Sidewall Junction Capacitance using this online calculator? To use this online calculator for Zero Bias Sidewall Junction Capacitance, enter Sidewall Doping Density (N_A(sw)), Doping Concentration of Donor (N_D) & Built in Potential of Sidewall Junctions (Φ_osw) and hit the calculate button. Here is how the Zero Bias Sidewall Junction Capacitance calculation can be explained with given input values -> 4.6E-10 = sqrt(([Permitivity-silicon]*[Charge-e])/2*((0.35*3010000)/(0.35+3010000))*1/3.2E-05).

FAQ

What is Zero Bias Sidewall Junction Capacitance?

The Zero Bias Sidewall Junction Capacitance formula is defined as the built-in potential in the sidewall junction of certain transistor structures and is represented as C_j0sw = sqrt(([Permitivity-silicon]*[Charge-e])/2*((N_A(sw)*N_D)/(N_A(sw)+N_D))*1/Φ_osw) or Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions). Sidewall Doping Density refers to the concentration of dopant atoms along the sidewalls of the transistor structure, Doping Concentration of Donor refers to the concentration of donor atoms intentionally added to a semiconductor material & Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure.

How to calculate Zero Bias Sidewall Junction Capacitance?

The Zero Bias Sidewall Junction Capacitance formula is defined as the built-in potential in the sidewall junction of certain transistor structures is calculated using Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions). To calculate Zero Bias Sidewall Junction Capacitance, you need Sidewall Doping Density (N_A(sw)), Doping Concentration of Donor (N_D) & Built in Potential of Sidewall Junctions (Φ_osw). With our tool, you need to enter the respective value for Sidewall Doping Density, Doping Concentration of Donor & Built in Potential of Sidewall Junctions and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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