Current Density Hole Calculator

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Bipolar IC Fabrication

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✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]			+10% -10%
✖Diffusion Constant For PNP describes how easily these minority carriers diffuse through the semiconductor material when an electric field is applied.ⓘ Diffusion Constant For PNP [D_p]			+10% -10%
✖Hole Equilibrium Concentration is a characteristic property of the material and is determined by intrinsic factors like the bandgap energy and temperature.ⓘ Hole Equilibrium Concentration [p_n]			+10% -10%
✖The base width is an important parameter affecting the transistor's characteristics, especially in terms of its operation and speed.ⓘ Base Width [W_b]			+10% -10%

✖Hole Current Density contributes to the total current in a semiconductor device, and it's an essential parameter in understanding the behavior of semiconductor.ⓘ Current Density Hole [J_p]

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Formula

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Current Density Hole

Formula

`"J"_{"p"} = "q"*"D"_{"p"}*("p"_{"n"}/"W"_{"b"})`

Example

`"4.375A/cm²"="5mC"*"100cm²/s"*("70/cm³"/"8cm")`

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Current Density Hole Solution

STEP 0: Pre-Calculation Summary

Formula Used

Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)
J_p = q*D_p*(p_n/W_b)
This formula uses 5 Variables

Variables Used

Hole Current Density - (Measured in Ampere per Square Meter) - Hole Current Density contributes to the total current in a semiconductor device, and it's an essential parameter in understanding the behavior of semiconductor.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Diffusion Constant For PNP - (Measured in Square Meter Per Second) - Diffusion Constant For PNP describes how easily these minority carriers diffuse through the semiconductor material when an electric field is applied.
Hole Equilibrium Concentration - (Measured in 1 per Cubic Meter) - Hole Equilibrium Concentration is a characteristic property of the material and is determined by intrinsic factors like the bandgap energy and temperature.
Base Width - (Measured in Meter) - The base width is an important parameter affecting the transistor's characteristics, especially in terms of its operation and speed.

STEP 1: Convert Input(s) to Base Unit

Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Diffusion Constant For PNP: 100 Square Centimeter Per Second --> 0.01 Square Meter Per Second (Check conversion here)
Hole Equilibrium Concentration: 70 1 per Cubic Centimeter --> 70000000 1 per Cubic Meter (Check conversion here)
Base Width: 8 Centimeter --> 0.08 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

J_p = q*D_p*(p_n/W_b) --> 0.005*0.01*(70000000/0.08)

Evaluating ... ...

J_p = 43750

STEP 3: Convert Result to Output's Unit

43750 Ampere per Square Meter -->4.375 Ampere per Square Centimeter (Check conversion here)

FINAL ANSWER

4.375 Ampere per Square Centimeter <-- Hole Current Density

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » Integrated Circuits (IC) » Bipolar IC Fabrication » Current Density Hole

Credits

Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

Rahul Gupta has created this Calculator and 25+ more calculators!

Verified by Ritwik Tripathi

Vellore Institute of Technology (VIT Vellore), Vellore

Ritwik Tripathi has verified this Calculator and 100+ more calculators!

< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Current Density Hole Formula

Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)
J_p = q*D_p*(p_n/W_b)

What factors affect the hole current density in a semiconductor?

The hole current density is influenced by the diffusion constant of holes, the spatial gradient of the hole concentration, and the elementary charge.

How to Calculate Current Density Hole?

Current Density Hole calculator uses Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width) to calculate the Hole Current Density, The Current Density Hole formula is a measure of the flow of "holes" in a semiconductor material. Holes are the positively charged quasiparticles that act as charge carriers in a semiconductor, effectively representing the absence of an electron in a filled state. Hole Current Density is denoted by J_p symbol.

How to calculate Current Density Hole using this online calculator? To use this online calculator for Current Density Hole, enter Charge (q), Diffusion Constant For PNP (D_p), Hole Equilibrium Concentration (p_n) & Base Width (W_b) and hit the calculate button. Here is how the Current Density Hole calculation can be explained with given input values -> 0.000438 = 0.005*0.01*(70000000/0.08).

FAQ

What is Current Density Hole?

The Current Density Hole formula is a measure of the flow of "holes" in a semiconductor material. Holes are the positively charged quasiparticles that act as charge carriers in a semiconductor, effectively representing the absence of an electron in a filled state and is represented as J_p = q*D_p*(p_n/W_b) or Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width). Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Diffusion Constant For PNP describes how easily these minority carriers diffuse through the semiconductor material when an electric field is applied, Hole Equilibrium Concentration is a characteristic property of the material and is determined by intrinsic factors like the bandgap energy and temperature & The base width is an important parameter affecting the transistor's characteristics, especially in terms of its operation and speed.

How to calculate Current Density Hole?

The Current Density Hole formula is a measure of the flow of "holes" in a semiconductor material. Holes are the positively charged quasiparticles that act as charge carriers in a semiconductor, effectively representing the absence of an electron in a filled state is calculated using Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width). To calculate Current Density Hole, you need Charge (q), Diffusion Constant For PNP (D_p), Hole Equilibrium Concentration (p_n) & Base Width (W_b). With our tool, you need to enter the respective value for Charge, Diffusion Constant For PNP, Hole Equilibrium Concentration & Base Width and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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