Current in Inversion Channel of PMOS given Mobility Calculator

✖Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.ⓘ Mobility of Holes in Channel [μ_p]			+10% -10%
✖Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.ⓘ Horizontal Component of Electric Field in Channel [E_y]			+10% -10%

✖The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field.ⓘ Current in Inversion Channel of PMOS given Mobility [V_y]

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Current in Inversion Channel of PMOS given Mobility

Formula

`"V"_{"y"} = "μ"_{"p"}*"E"_{"y"}`

Example

`"1463cm/s"="2.66m²/V*s"*"5.5V/m"`

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Current in Inversion Channel of PMOS given Mobility Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel
V_y = μ_p*E_y
This formula uses 3 Variables

Variables Used

Drift Velocity of Inversion - (Measured in Meter per Second) - The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field.
Mobility of Holes in Channel - (Measured in Square Meter per Volt per Second) - Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.
Horizontal Component of Electric Field in Channel - (Measured in Volt per Meter) - Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.

STEP 1: Convert Input(s) to Base Unit

Mobility of Holes in Channel: 2.66 Square Meter per Volt per Second --> 2.66 Square Meter per Volt per Second No Conversion Required
Horizontal Component of Electric Field in Channel: 5.5 Volt per Meter --> 5.5 Volt per Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_y = μ_p*E_y --> 2.66*5.5

Evaluating ... ...

V_y = 14.63

STEP 3: Convert Result to Output's Unit

14.63 Meter per Second -->1463 Centimeter per Second (Check conversion here)

FINAL ANSWER

1463 Centimeter per Second <-- Drift Velocity of Inversion

(Calculation completed in 00.004 seconds)

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Created by Aman Dhussawat

GURU TEGH BAHADUR INSTITUTE OF TECHNOLOGY (GTBIT), NEW DELHI

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Chandigarh University (CU), Punjab

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< 14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Current in Inversion Channel of PMOS given Mobility Formula

Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel
V_y = μ_p*E_y

What happens when inversion layer is formed in PMOS?

The inversion layer provides a channel through which current can pass between source and drain terminals. Varying the voltage between the gate and body modulates the conductivity of this layer and thereby controls the current flow between drain and source. This is known as enhancement mode.

How to Calculate Current in Inversion Channel of PMOS given Mobility?

Current in Inversion Channel of PMOS given Mobility calculator uses Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel to calculate the Drift Velocity of Inversion, The Current in Inversion Channel of PMOS given Mobility formula is defined as the current in the inversion channel of a PMOS transistor is determined by the mobility of the charge carriers in the channel, as well as by the channel width, channel length, and the gate-source voltage. Drift Velocity of Inversion is denoted by V_y symbol.

How to calculate Current in Inversion Channel of PMOS given Mobility using this online calculator? To use this online calculator for Current in Inversion Channel of PMOS given Mobility, enter Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y) and hit the calculate button. Here is how the Current in Inversion Channel of PMOS given Mobility calculation can be explained with given input values -> 146300 = 2.66*5.5.

FAQ

What is Current in Inversion Channel of PMOS given Mobility?

The Current in Inversion Channel of PMOS given Mobility formula is defined as the current in the inversion channel of a PMOS transistor is determined by the mobility of the charge carriers in the channel, as well as by the channel width, channel length, and the gate-source voltage and is represented as V_y = μ_p*E_y or Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel. Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field & Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.

How to calculate Current in Inversion Channel of PMOS given Mobility?

The Current in Inversion Channel of PMOS given Mobility formula is defined as the current in the inversion channel of a PMOS transistor is determined by the mobility of the charge carriers in the channel, as well as by the channel width, channel length, and the gate-source voltage is calculated using Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel. To calculate Current in Inversion Channel of PMOS given Mobility, you need Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y). With our tool, you need to enter the respective value for Mobility of Holes in Channel & Horizontal Component of Electric Field in Channel and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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