## Donor Dopant Concentration Solution

STEP 0: Pre-Calculation Summary
Formula Used
Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
ND = (Isat*Lt)/([Charge-e]*Wt*μn*Cdep)
This formula uses 1 Constants, 6 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19 Coulomb
Variables Used
Donor Dopant Concentration - (Measured in Electrons per Cubic Meter) - Donor Dopant Concentration is the concentration of donor atoms per unit volume.
Saturation Current - (Measured in Ampere) - Saturation Current current associated with the saturation region of the device.
Transistor's Length - (Measured in Meter) - Transistor's Length is a critical parameter that significantly influences its performance.
Transistor's Width - (Measured in Meter) - Transistor's Width is a critical parameter that significantly influences its performance.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Depletion Layer Capacitance per Unit Area - (Measured in Farad) - Depletion Layer Capacitance per Unit Area is the capacitance of depletion layer per unit area.
STEP 1: Convert Input(s) to Base Unit
Saturation Current: 2 Ampere --> 2 Ampere No Conversion Required
Transistor's Length: 3.2 Micrometer --> 3.2E-06 Meter (Check conversion here)
Transistor's Width: 5.5 Micrometer --> 5.5E-06 Meter (Check conversion here)
Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Depletion Layer Capacitance per Unit Area: 1.4 Microfarad --> 1.4E-06 Farad (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ND = (Isat*Lt)/([Charge-e]*Wtn*Cdep) --> (2*3.2E-06)/([Charge-e]*5.5E-06*30*1.4E-06)
Evaluating ... ...
ND = 1.72924928249344E+23
STEP 3: Convert Result to Output's Unit
1.72924928249344E+23 Electrons per Cubic Meter --> No Conversion Required
1.72924928249344E+23 1.7E+23 Electrons per Cubic Meter <-- Donor Dopant Concentration
(Calculation completed in 00.004 seconds)
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Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
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## < 15 MOS IC Fabrication Calculators

Switching Point Voltage
Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))
Drain Current of MOSFET at Saturation Region
Drain Current = 0.5*Electron Mobility*Oxide Capacitance*Transistor's Width*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)/Transistor's Length
Body Effect in MOSFET
Threshold Voltage = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to the Body)-sqrt(2*Bulk Fermi Potential))
Donor Dopant Concentration
Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
Channel Resistance
Channel Resistance = Transistor's Length*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2/(Electron Mobility*Oxide Capacitance*Transistor's Width*2)
Acceptor Dopant Concentration
Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance per Unit Area)
Maximum Dopant Concentration
Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))
Propagation Time
Propagation Time = 0.7*Number of Pass Transistors*(Number of Pass Transistors+1)/2*Resistance in MOSFET*Load Capaacitance
Drift Current Density due to Free Electrons
Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
MOSFET Unity-Gain Frequency
Unity Gain Frequency in MOSFET = 1/(2*pi)*MOSFET Transconductance/(Gate Source Capacitance+Gate Drain Capacitance)
Drift Current Density due to Holes
Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
Critical Dimension
Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture
Depth of Focus
Depth of Focus = Proportionality Factor*Wavelength of Light/(Numerical Aperture^2)
Equivalent Oxide Thickness
Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
Die Per Wafer
Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

## Donor Dopant Concentration Formula

Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
ND = (Isat*Lt)/([Charge-e]*Wt*μn*Cdep)

## What role do donor atoms play in a semiconductor?

Donor atoms introduce extra electrons into the semiconductor, creating a population of free electrons that contribute to the electrical conductivity of the material.

## How to Calculate Donor Dopant Concentration?

Donor Dopant Concentration calculator uses Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area) to calculate the Donor Dopant Concentration, The Donor Dopant Concentration formula is defined as the concentration of donor atoms per unit volume. Donor Dopant Concentration is denoted by ND symbol.

How to calculate Donor Dopant Concentration using this online calculator? To use this online calculator for Donor Dopant Concentration, enter Saturation Current (Isat), Transistor's Length (Lt), Transistor's Width (Wt), Electron Mobility n) & Depletion Layer Capacitance per Unit Area (Cdep) and hit the calculate button. Here is how the Donor Dopant Concentration calculation can be explained with given input values -> -1.7E+32 = (2*3.2E-06)/([Charge-e]*5.5E-06*30*1.4E-06).

### FAQ

What is Donor Dopant Concentration?
The Donor Dopant Concentration formula is defined as the concentration of donor atoms per unit volume and is represented as ND = (Isat*Lt)/([Charge-e]*Wtn*Cdep) or Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area). Saturation Current current associated with the saturation region of the device, Transistor's Length is a critical parameter that significantly influences its performance, Transistor's Width is a critical parameter that significantly influences its performance, Electron Mobility describes how quickly electrons can move through the material in response to an electric field & Depletion Layer Capacitance per Unit Area is the capacitance of depletion layer per unit area.
How to calculate Donor Dopant Concentration?
The Donor Dopant Concentration formula is defined as the concentration of donor atoms per unit volume is calculated using Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area). To calculate Donor Dopant Concentration, you need Saturation Current (Isat), Transistor's Length (Lt), Transistor's Width (Wt), Electron Mobility n) & Depletion Layer Capacitance per Unit Area (Cdep). With our tool, you need to enter the respective value for Saturation Current, Transistor's Length, Transistor's Width, Electron Mobility & Depletion Layer Capacitance per Unit Area and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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