Maximum Allowable Power Calculator

✖Reactance describes the opposition that an element (such as a capacitor or inductor) presents to the flow of alternating current (AC).ⓘ Reactance [Χ_c]			+10% -10%
✖Transit Time Cutoff Frequency is related as the time taken for charge carriers (electrons or holes) to transit through the device.ⓘ Transit Time Cutoff Frequency [f_TC]			+10% -10%
✖Maximum Electric Field a vector field that describes the force experienced by a charged particle at any given point in space.ⓘ Maximum Electric Field [E_m]			+10% -10%
✖Maximum Saturation Drift Velocity refers to the highest attainable drift velocity of charge carriers in a semiconductor material under the influence of an electric field, reaching saturation.ⓘ Maximum Saturation Drift Velocity [V_s]			+10% -10%

✖Maximum Allowable Power the maximum amount of power the system or component can handle without exceeding its design limits or risking damage.ⓘ Maximum Allowable Power [P_m]

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Formula

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Maximum Allowable Power

Formula

`"P"_{"m"} = 1/("Χ"_{"c"}*"f"_{"TC"}^2)*("E"_{"m"}*"V"_{"s"}/(2*pi))^2`

Example

`"1.7E^6W"=1/("0.0056Ω"*("2.08Hz")^2)*("24V/m"*"53m/s"/(2*pi))^2`

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Maximum Allowable Power Solution

STEP 0: Pre-Calculation Summary

Formula Used

Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2
P_m = 1/(Χ_c*f_TC^2)*(E_m*V_s/(2*pi))^2
This formula uses 1 Constants, 5 Variables

Constants Used

pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288

Variables Used

Maximum Allowable Power - (Measured in Watt) - Maximum Allowable Power the maximum amount of power the system or component can handle without exceeding its design limits or risking damage.
Reactance - (Measured in Ohm) - Reactance describes the opposition that an element (such as a capacitor or inductor) presents to the flow of alternating current (AC).
Transit Time Cutoff Frequency - (Measured in Hertz) - Transit Time Cutoff Frequency is related as the time taken for charge carriers (electrons or holes) to transit through the device.
Maximum Electric Field - (Measured in Volt per Meter) - Maximum Electric Field a vector field that describes the force experienced by a charged particle at any given point in space.
Maximum Saturation Drift Velocity - (Measured in Meter per Second) - Maximum Saturation Drift Velocity refers to the highest attainable drift velocity of charge carriers in a semiconductor material under the influence of an electric field, reaching saturation.

STEP 1: Convert Input(s) to Base Unit

Reactance: 0.0056 Ohm --> 0.0056 Ohm No Conversion Required
Transit Time Cutoff Frequency: 2.08 Hertz --> 2.08 Hertz No Conversion Required
Maximum Electric Field: 24 Volt per Meter --> 24 Volt per Meter No Conversion Required
Maximum Saturation Drift Velocity: 53 Meter per Second --> 53 Meter per Second No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

P_m = 1/(Χ_c*f_TC^2)*(E_m*V_s/(2*pi))^2 --> 1/(0.0056*2.08^2)*(24*53/(2*pi))^2

Evaluating ... ...

P_m = 1691608.22832704

STEP 3: Convert Result to Output's Unit

1691608.22832704 Watt --> No Conversion Required

FINAL ANSWER

1691608.22832704 ≈ 1.7E+6 Watt <-- Maximum Allowable Power

(Calculation completed in 00.004 seconds)

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Gain Degradation Factor for MESFET

Go Gain Degradation Factor = Output Frequency/Signal Frequency*(Signal Frequency/Output Frequency*(Figure of Merit)^2)/(1+sqrt(1+(Signal Frequency/Output Frequency*(Figure of Merit)^2)))^2

Noise Factor GaAs MESFET

Go Noise Factor = 1+2*Angular frequency*Gate Source Capacitance/Transconductance of the MESFET*sqrt((Source Resistance-Gate Resistance)/Input Resistance)

Maximum Operating Frequency

Go Maximum Operating Frequency = MESFET Cutoff Frequency/2*sqrt(Drain Resistance/(Source Resistance+Input Resistance+Gate Metallization Resistance))

Maximum Allowable Power

Go Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2

Transconductance in Saturation Region in MESFET

Go Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage))

Maximum Power Gain of Microwave Transistor

Go Maximum Power Gain of a Microwave Transistor = (Transit Time Cutoff Frequency/Power Gain Frequency)^2*Output Impedance/Input Impedence

MESFET Cutoff Frequency

Go MESFET Cutoff Frequency = Transconductance of the MESFET/(2*pi*Gate Source Capacitance)

Maximum Frequency of Oscillation

Go Maximum Frequency of Oscillation = Saturation Velocity/(2*pi*Channel Length)

Transit Angle

Go Transit Angle = Angular frequency*Length of Drift Space/Carrier Drift Velocity

Maximum Allowable Power Formula

Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2
P_m = 1/(Χ_c*f_TC^2)*(E_m*V_s/(2*pi))^2

How is Maximum Allowable Power determined for electronic components?

Manufacturers specify MAP based on the component's design, materials, and thermal characteristics. Testing and simulations are often performed to establish these limits.

How to Calculate Maximum Allowable Power?

Maximum Allowable Power calculator uses Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2 to calculate the Maximum Allowable Power, The Maximum Allowable Power formula is defined as the maximum amount of power the system or component can handle without exceeding its design limits or risking damage. Maximum Allowable Power is denoted by P_m symbol.

How to calculate Maximum Allowable Power using this online calculator? To use this online calculator for Maximum Allowable Power, enter Reactance (Χ_c), Transit Time Cutoff Frequency (f_TC), Maximum Electric Field (E_m) & Maximum Saturation Drift Velocity (V_s) and hit the calculate button. Here is how the Maximum Allowable Power calculation can be explained with given input values -> 1.7E+6 = 1/(0.0056*2.08^2)*(24*53/(2*pi))^2.

FAQ

What is Maximum Allowable Power?

The Maximum Allowable Power formula is defined as the maximum amount of power the system or component can handle without exceeding its design limits or risking damage and is represented as P_m = 1/(Χ_c*f_TC^2)*(E_m*V_s/(2*pi))^2 or Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2. Reactance describes the opposition that an element (such as a capacitor or inductor) presents to the flow of alternating current (AC), Transit Time Cutoff Frequency is related as the time taken for charge carriers (electrons or holes) to transit through the device, Maximum Electric Field a vector field that describes the force experienced by a charged particle at any given point in space & Maximum Saturation Drift Velocity refers to the highest attainable drift velocity of charge carriers in a semiconductor material under the influence of an electric field, reaching saturation.

How to calculate Maximum Allowable Power?

The Maximum Allowable Power formula is defined as the maximum amount of power the system or component can handle without exceeding its design limits or risking damage is calculated using Maximum Allowable Power = 1/(Reactance*Transit Time Cutoff Frequency^2)*(Maximum Electric Field*Maximum Saturation Drift Velocity/(2*pi))^2. To calculate Maximum Allowable Power, you need Reactance (Χ_c), Transit Time Cutoff Frequency (f_TC), Maximum Electric Field (E_m) & Maximum Saturation Drift Velocity (V_s). With our tool, you need to enter the respective value for Reactance, Transit Time Cutoff Frequency, Maximum Electric Field & Maximum Saturation Drift Velocity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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