MOSFET Transconductance given Oxide Capacitance Calculator

✖Electron Mobility describes how quickly electrons can move through the material in response to an electric field.ⓘ Electron Mobility [μ_n]			+10% -10%
✖Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Width [W_t]			+10% -10%
✖Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Length [L_t]			+10% -10%
✖Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.ⓘ Drain Current [I_d]			+10% -10%

✖Transconductance in MOSFET is a key parameter that describes the relationship between the input voltage and the output current.ⓘ MOSFET Transconductance given Oxide Capacitance [g_m]

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Formula

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MOSFET Transconductance given Oxide Capacitance

Formula

`"g"_{"m"} = sqrt(2*"μ"_{"n"}*"C"_{"ox"}*("W"_{"t"}/"L"_{"t"})*"I"_{"d"})`

Example

`"2.286578S"=sqrt(2*"30m²/V*s"*"3.9F"*("5.5μm"/"3.2μm")*"0.013A")`

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MOSFET Transconductance given Oxide Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Transconductance in MOSFET = sqrt(2*Electron Mobility*Oxide Capacitance*(Transistor's Width/Transistor's Length)*Drain Current)
g_m = sqrt(2*μ_n*C_ox*(W_t/L_t)*I_d)
This formula uses 1 Functions, 6 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Transconductance in MOSFET - (Measured in Siemens) - Transconductance in MOSFET is a key parameter that describes the relationship between the input voltage and the output current.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Oxide Capacitance - (Measured in Farad) - Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.
Transistor's Width - (Measured in Meter) - Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Transistor's Length - (Measured in Meter) - Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Drain Current - (Measured in Ampere) - Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.

STEP 1: Convert Input(s) to Base Unit

Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 3.9 Farad --> 3.9 Farad No Conversion Required
Transistor's Width: 5.5 Micrometer --> 5.5E-06 Meter (Check conversion here)
Transistor's Length: 3.2 Micrometer --> 3.2E-06 Meter (Check conversion here)
Drain Current: 0.013 Ampere --> 0.013 Ampere No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

g_m = sqrt(2*μ_n*C_ox*(W_t/L_t)*I_d) --> sqrt(2*30*3.9*(5.5E-06/3.2E-06)*0.013)

Evaluating ... ...

g_m = 2.28657768291392

STEP 3: Convert Result to Output's Unit

2.28657768291392 Siemens --> No Conversion Required

FINAL ANSWER

2.28657768291392 ≈ 2.286578 Siemens <-- Transconductance in MOSFET

(Calculation completed in 00.004 seconds)

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< 16 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)

MOSFET Transconductance given Oxide Capacitance

Go Transconductance in MOSFET = sqrt(2*Electron Mobility*Oxide Capacitance*(Transistor's Width/Transistor's Length)*Drain Current)

Voltage Gain given Load Resistance of MOSFET

Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Maximum Voltage Gain at Bias Point

Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)

Voltage Gain using Small Signal

Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Voltage Gain given Drain Voltage

Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage

Body Effect on Transconductance

Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance

Saturation Voltage of MOSFET

Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage

Bias Voltage of MOSFET

Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage

Maximum Voltage Gain given all Voltages

Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

Amplification Factor in Small Signal MOSFET Model

Go Amplification Factor = Transconductance*Output Resistance

Treshold Voltage of MOSFET

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Transconductance in MOSFET

Go Transconductance = (2*Drain Current)/Overdrive Voltage

Conductance in Linear Resistance of MOSFET

Go Conductance of Channel = 1/Linear Resistance

MOSFET Transconductance given Oxide Capacitance Formula

Transconductance in MOSFET = sqrt(2*Electron Mobility*Oxide Capacitance*(Transistor's Width/Transistor's Length)*Drain Current)
g_m = sqrt(2*μ_n*C_ox*(W_t/L_t)*I_d)

Why is Transconductance Important in MOSFETs?

Transconductance is a crucial parameter in MOSFET-based circuits because it determines the gain of the transistor. Higher transconductance generally leads to higher amplification, making it an essential factor in the design of amplifiers and other signal processing circuits.

How to Calculate MOSFET Transconductance given Oxide Capacitance?

MOSFET Transconductance given Oxide Capacitance calculator uses Transconductance in MOSFET = sqrt(2*Electron Mobility*Oxide Capacitance*(Transistor's Width/Transistor's Length)*Drain Current) to calculate the Transconductance in MOSFET, The MOSFET Transconductance given Oxide Capacitance formula is defined as a key parameter that describes the relationship between the input voltage and the output current. Transconductance in MOSFET is denoted by g_m symbol.

How to calculate MOSFET Transconductance given Oxide Capacitance using this online calculator? To use this online calculator for MOSFET Transconductance given Oxide Capacitance, enter Electron Mobility (μ_n), Oxide Capacitance (C_ox), Transistor's Width (W_t), Transistor's Length (L_t) & Drain Current (I_d) and hit the calculate button. Here is how the MOSFET Transconductance given Oxide Capacitance calculation can be explained with given input values -> 7.230794 = sqrt(2*30*3.9*(5.5E-06/3.2E-06)*0.013).

FAQ

What is MOSFET Transconductance given Oxide Capacitance?

The MOSFET Transconductance given Oxide Capacitance formula is defined as a key parameter that describes the relationship between the input voltage and the output current and is represented as g_m = sqrt(2*μ_n*C_ox*(W_t/L_t)*I_d) or Transconductance in MOSFET = sqrt(2*Electron Mobility*Oxide Capacitance*(Transistor's Width/Transistor's Length)*Drain Current). Electron Mobility describes how quickly electrons can move through the material in response to an electric field, Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs, Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor & Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.

How to calculate MOSFET Transconductance given Oxide Capacitance?

The MOSFET Transconductance given Oxide Capacitance formula is defined as a key parameter that describes the relationship between the input voltage and the output current is calculated using Transconductance in MOSFET = sqrt(2*Electron Mobility*Oxide Capacitance*(Transistor's Width/Transistor's Length)*Drain Current). To calculate MOSFET Transconductance given Oxide Capacitance, you need Electron Mobility (μ_n), Oxide Capacitance (C_ox), Transistor's Width (W_t), Transistor's Length (L_t) & Drain Current (I_d). With our tool, you need to enter the respective value for Electron Mobility, Oxide Capacitance, Transistor's Width, Transistor's Length & Drain Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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