Emitter Injection Efficiency Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

Bipolar IC Fabrication

MOS IC Fabrication

Schmitt Trigger

✖Emitter Current refers to the current flowing between the emitter and base terminals of the transistor when it's in operation.ⓘ Emitter Current [I_E]			+10% -10%
✖Emitter Current due to Electrons is the maximum possible current of majority carriers flowing into the emitter.ⓘ Emitter Current due to Electrons [I_Ee]			+10% -10%
✖Emitter Current due to Holes is the maximum possible current of minority carriers injected into the base.ⓘ Emitter Current due to Holes [I_Eh]			+10% -10%

✖Emmitter Injection Efficiency is the ratio of the electron current flowing in the emitter to the total current across the emitter base junction.ⓘ Emitter Injection Efficiency [γ]

⎘ Copy

👎

Formula

✖

Emitter Injection Efficiency

Formula

`"γ" = "I"_{"E"}/("I"_{"Ee"}+"I"_{"Eh"})`

Example

`"0.727273"="0.008A"/("0.005A"+"0.006A")`

Calculator

LaTeX

Reset

👍

Download Electronics Formula PDF PDF Image

Emitter Injection Efficiency Solution

STEP 0: Pre-Calculation Summary

Formula Used

Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)
γ = I_E/(I_Ee+I_Eh)
This formula uses 4 Variables

Variables Used

Emmitter Injection Efficiency - Emmitter Injection Efficiency is the ratio of the electron current flowing in the emitter to the total current across the emitter base junction.
Emitter Current - (Measured in Ampere) - Emitter Current refers to the current flowing between the emitter and base terminals of the transistor when it's in operation.
Emitter Current due to Electrons - (Measured in Ampere) - Emitter Current due to Electrons is the maximum possible current of majority carriers flowing into the emitter.
Emitter Current due to Holes - (Measured in Ampere) - Emitter Current due to Holes is the maximum possible current of minority carriers injected into the base.

STEP 1: Convert Input(s) to Base Unit

Emitter Current: 0.008 Ampere --> 0.008 Ampere No Conversion Required
Emitter Current due to Electrons: 0.005 Ampere --> 0.005 Ampere No Conversion Required
Emitter Current due to Holes: 0.006 Ampere --> 0.006 Ampere No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

γ = I_E/(I_Ee+I_Eh) --> 0.008/(0.005+0.006)

Evaluating ... ...

γ = 0.727272727272727

STEP 3: Convert Result to Output's Unit

0.727272727272727 --> No Conversion Required

FINAL ANSWER

0.727272727272727 ≈ 0.727273 <-- Emmitter Injection Efficiency

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » Integrated Circuits (IC) » Bipolar IC Fabrication » Emitter Injection Efficiency

Credits

Created by banuprakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

banuprakash has created this Calculator and 50+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Emitter Injection Efficiency Formula

Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)
γ = I_E/(I_Ee+I_Eh)

What is the significance of understanding γ in semiconductor devices?

Understanding γ is crucial in analyzing the behavior of semiconductor devices, especially in situations where the contribution of electrons to the emitter current is important. It aids in device characterization and optimization for specific applications.

How to Calculate Emitter Injection Efficiency?

Emitter Injection Efficiency calculator uses Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes) to calculate the Emmitter Injection Efficiency, The Emitter Injection Efficiency formula is defined as ratio of the emitter current to the total current flowing into the base. Emmitter Injection Efficiency is denoted by γ symbol.

How to calculate Emitter Injection Efficiency using this online calculator? To use this online calculator for Emitter Injection Efficiency, enter Emitter Current (I_E), Emitter Current due to Electrons (I_Ee) & Emitter Current due to Holes (I_Eh) and hit the calculate button. Here is how the Emitter Injection Efficiency calculation can be explained with given input values -> 0.727273 = 0.008/(0.005+0.006).

FAQ

What is Emitter Injection Efficiency?

The Emitter Injection Efficiency formula is defined as ratio of the emitter current to the total current flowing into the base and is represented as γ = I_E/(I_Ee+I_Eh) or Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes). Emitter Current refers to the current flowing between the emitter and base terminals of the transistor when it's in operation, Emitter Current due to Electrons is the maximum possible current of majority carriers flowing into the emitter & Emitter Current due to Holes is the maximum possible current of minority carriers injected into the base.

How to calculate Emitter Injection Efficiency?

The Emitter Injection Efficiency formula is defined as ratio of the emitter current to the total current flowing into the base is calculated using Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes). To calculate Emitter Injection Efficiency, you need Emitter Current (I_E), Emitter Current due to Electrons (I_Ee) & Emitter Current due to Holes (I_Eh). With our tool, you need to enter the respective value for Emitter Current, Emitter Current due to Electrons & Emitter Current due to Holes and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Emmitter Injection Efficiency?

In this formula, Emmitter Injection Efficiency uses Emitter Current, Emitter Current due to Electrons & Emitter Current due to Holes. We can use 1 other way(s) to calculate the same, which is/are as follows -

Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Home

FREE PDFs

🔍 Search