Resistance of Diffused Layer Calculator

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✖Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.ⓘ Ohmic Conductivity [σ]			+10% -10%
✖Length of Diffused Layer is the measured distance from one end to the other of the longer or longest side of an object.ⓘ Length of Diffused Layer [L]			+10% -10%
✖Width of Diffused Layer is the horizontal distance measured from side to side of a specific media type.ⓘ Width of Diffused Layer [W]			+10% -10%
✖Thickness of Layer is often used for manufacturing casted parts to ensure that wall structure is designed with just the right amount of material.ⓘ Thickness of Layer [t]			+10% -10%

✖Resistance is the property of a material that restricts the flow of electric current.ⓘ Resistance of Diffused Layer [R]

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Formula

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Resistance of Diffused Layer

Formula

`"R" = (1/"σ")*("L"/("W"*"t"))`

Example

`"0.731636Ω"=(1/"0.085mho/cm")*("25cm"/("4cm"*"100.5cm"))`

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Resistance of Diffused Layer Solution

STEP 0: Pre-Calculation Summary

Formula Used

Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))
R = (1/σ)*(L/(W*t))
This formula uses 5 Variables

Variables Used

Resistance - (Measured in Ohm) - Resistance is the property of a material that restricts the flow of electric current.
Ohmic Conductivity - (Measured in Siemens per Meter) - Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.
Length of Diffused Layer - (Measured in Meter) - Length of Diffused Layer is the measured distance from one end to the other of the longer or longest side of an object.
Width of Diffused Layer - (Measured in Meter) - Width of Diffused Layer is the horizontal distance measured from side to side of a specific media type.
Thickness of Layer - (Measured in Meter) - Thickness of Layer is often used for manufacturing casted parts to ensure that wall structure is designed with just the right amount of material.

STEP 1: Convert Input(s) to Base Unit

Ohmic Conductivity: 0.085 Mho per Centimeter --> 8.5 Siemens per Meter (Check conversion here)
Length of Diffused Layer: 25 Centimeter --> 0.25 Meter (Check conversion here)
Width of Diffused Layer: 4 Centimeter --> 0.04 Meter (Check conversion here)
Thickness of Layer: 100.5 Centimeter --> 1.005 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R = (1/σ)*(L/(W*t)) --> (1/8.5)*(0.25/(0.04*1.005))

Evaluating ... ...

R = 0.731635937957272

STEP 3: Convert Result to Output's Unit

0.731635937957272 Ohm --> No Conversion Required

FINAL ANSWER

0.731635937957272 ≈ 0.731636 Ohm <-- Resistance

(Calculation completed in 00.004 seconds)

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Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

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< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Resistance of Diffused Layer Formula

Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))
R = (1/σ)*(L/(W*t))

What is the resistance of a pure semiconductor?

The resistance of semiconductor, Insulator, and Electrolyte (silicon, Glass, Varnish, etc) decrease with increase in temperature. As the temperature increases, some of the electrons acquire energy and become free for conduction. Hence, conductivity increases and resistance decreases with increase in temperature.

How to Calculate Resistance of Diffused Layer?

Resistance of Diffused Layer calculator uses Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer)) to calculate the Resistance, The Resistance of Diffused Layer formula is defined as the opposition encountered by the flow of current through a semiconductor material. This resistance is primarily influenced by the doping concentration, thickness, and material properties of the diffused layer. Resistance is denoted by R symbol.

How to calculate Resistance of Diffused Layer using this online calculator? To use this online calculator for Resistance of Diffused Layer, enter Ohmic Conductivity (σ), Length of Diffused Layer (L), Width of Diffused Layer (W) & Thickness of Layer (t) and hit the calculate button. Here is how the Resistance of Diffused Layer calculation can be explained with given input values -> 0.731636 = (1/8.5)*(0.25/(0.04*1.005)).

FAQ

What is Resistance of Diffused Layer?

The Resistance of Diffused Layer formula is defined as the opposition encountered by the flow of current through a semiconductor material. This resistance is primarily influenced by the doping concentration, thickness, and material properties of the diffused layer and is represented as R = (1/σ)*(L/(W*t)) or Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer)). Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another, Length of Diffused Layer is the measured distance from one end to the other of the longer or longest side of an object, Width of Diffused Layer is the horizontal distance measured from side to side of a specific media type & Thickness of Layer is often used for manufacturing casted parts to ensure that wall structure is designed with just the right amount of material.

How to calculate Resistance of Diffused Layer?

The Resistance of Diffused Layer formula is defined as the opposition encountered by the flow of current through a semiconductor material. This resistance is primarily influenced by the doping concentration, thickness, and material properties of the diffused layer is calculated using Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer)). To calculate Resistance of Diffused Layer, you need Ohmic Conductivity (σ), Length of Diffused Layer (L), Width of Diffused Layer (W) & Thickness of Layer (t). With our tool, you need to enter the respective value for Ohmic Conductivity, Length of Diffused Layer, Width of Diffused Layer & Thickness of Layer and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Resistance?

In this formula, Resistance uses Ohmic Conductivity, Length of Diffused Layer, Width of Diffused Layer & Thickness of Layer. We can use 1 other way(s) to calculate the same, which is/are as follows -

Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

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