Short Channel Threshold Voltage Reduction VLSI Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

VLSI Material Optimization

Analog VLSI Design

✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%
✖Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.ⓘ Surface Potential [Φ_s]			+10% -10%
✖Junction Depth is defined as the distance from the surface of a semiconductor material to the point where a significant change in the concentration of dopant atoms occurs.ⓘ Junction Depth [x_j]			+10% -10%
✖Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.ⓘ Oxide Capacitance per Unit Area [C_oxide]			+10% -10%
✖Channel Length refers to the physical length of the semiconductor material between the source and drain terminals within the transistor structure.ⓘ Channel Length [L]			+10% -10%
✖P-n Junction Depletion Depth with Source is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field.ⓘ P-n Junction Depletion Depth with Source [x_dS]			+10% -10%
✖P-n Junction Depletion Depth with Drain is defined as the extension of the depletion region into the semiconductor material near the drain terminal.ⓘ P-n Junction Depletion Depth with Drain [x_dD]			+10% -10%

✖Short Channel Threshold Voltage Reduction is defined as a reduction in threshold voltage of MOSFET due to short channel effect.ⓘ Short Channel Threshold Voltage Reduction VLSI [ΔV_T0]

⎘ Copy

👎

Formula

✖

Short Channel Threshold Voltage Reduction VLSI

Formula

`"ΔV"_{"T0"} = (sqrt(2*"[Charge-e]"*"[Permitivity-silicon]"*"[Permitivity-vacuum]"*"N"_{"A"}*abs(2*"Φ"_{"s"}))*"x"_{"j"})/("C"_{"oxide"}*2*"L")*((sqrt(1+(2*"x"_{"dS"})/"x"_{"j"})-1)+(sqrt(1+(2*"x"_{"dD"})/"x"_{"j"})-1))`

Example

`"0.467201V"=(sqrt(2*"[Charge-e]"*"[Permitivity-silicon]"*"[Permitivity-vacuum]"*"1e+16/cm³"*abs(2*"6.86V"))*"2μm")/("0.0703μF/cm²"*2*"2.5μm")*((sqrt(1+(2*"0.314μm")/"2μm")-1)+(sqrt(1+(2*"0.534μm")/"2μm")-1))`

Calculator

LaTeX

Reset

👍

Download Electronics Formula PDF PDF Image

Short Channel Threshold Voltage Reduction VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Short Channel Threshold Voltage Reduction = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))*Junction Depth)/(Oxide Capacitance per Unit Area*2*Channel Length)*((sqrt(1+(2*P-n Junction Depletion Depth with Source)/Junction Depth)-1)+(sqrt(1+(2*P-n Junction Depletion Depth with Drain)/Junction Depth)-1))
ΔV_T0 = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*N_A*abs(2*Φ_s))*x_j)/(C_oxide*2*L)*((sqrt(1+(2*x_dS)/x_j)-1)+(sqrt(1+(2*x_dD)/x_j)-1))
This formula uses 3 Constants, 2 Functions, 8 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
abs - The absolute value of a number is its distance from zero on the number line. It's always a positive value, as it represents the magnitude of a number without considering its direction., abs(Number)

Variables Used

Short Channel Threshold Voltage Reduction - (Measured in Volt) - Short Channel Threshold Voltage Reduction is defined as a reduction in threshold voltage of MOSFET due to short channel effect.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Surface Potential - (Measured in Volt) - Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.
Junction Depth - (Measured in Meter) - Junction Depth is defined as the distance from the surface of a semiconductor material to the point where a significant change in the concentration of dopant atoms occurs.
Oxide Capacitance per Unit Area - (Measured in Farad per Square Meter) - Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
Channel Length - (Measured in Meter) - Channel Length refers to the physical length of the semiconductor material between the source and drain terminals within the transistor structure.
P-n Junction Depletion Depth with Source - (Measured in Meter) - P-n Junction Depletion Depth with Source is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field.
P-n Junction Depletion Depth with Drain - (Measured in Meter) - P-n Junction Depletion Depth with Drain is defined as the extension of the depletion region into the semiconductor material near the drain terminal.

STEP 1: Convert Input(s) to Base Unit

Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion here)
Surface Potential: 6.86 Volt --> 6.86 Volt No Conversion Required
Junction Depth: 2 Micrometer --> 2E-06 Meter (Check conversion here)
Oxide Capacitance per Unit Area: 0.0703 Microfarad per Square Centimeter --> 0.000703 Farad per Square Meter (Check conversion here)
Channel Length: 2.5 Micrometer --> 2.5E-06 Meter (Check conversion here)
P-n Junction Depletion Depth with Source: 0.314 Micrometer --> 3.14E-07 Meter (Check conversion here)
P-n Junction Depletion Depth with Drain: 0.534 Micrometer --> 5.34E-07 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

ΔV_T0 = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*N_A*abs(2*Φ_s))*x_j)/(C_oxide*2*L)*((sqrt(1+(2*x_dS)/x_j)-1)+(sqrt(1+(2*x_dD)/x_j)-1)) --> (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*1E+22*abs(2*6.86))*2E-06)/(0.000703*2*2.5E-06)*((sqrt(1+(2*3.14E-07)/2E-06)-1)+(sqrt(1+(2*5.34E-07)/2E-06)-1))

Evaluating ... ...

ΔV_T0 = 0.467200582407994

STEP 3: Convert Result to Output's Unit

0.467200582407994 Volt --> No Conversion Required

FINAL ANSWER

0.467200582407994 ≈ 0.467201 Volt <-- Short Channel Threshold Voltage Reduction

(Calculation completed in 00.020 seconds)

You are here -

Home » Engineering » Electronics » VLSI Fabrication » VLSI Material Optimization » Short Channel Threshold Voltage Reduction VLSI

Credits

Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Short Channel Threshold Voltage Reduction VLSI Formula

Why does Short Channel Threshold Voltage Reduction occur in VLSI?

The reduction in channel length increases the influence of the source and drain regions on the channel. This enhanced influence results in a reduced control of the gate over the channel, causing the threshold voltage to decrease. Short-channel effects, such as drain-induced barrier lowering (DIBL) and punch-through, become more prominent in smaller transistors, contributing to the reduction in the threshold voltage.

How to Calculate Short Channel Threshold Voltage Reduction VLSI?

Short Channel Threshold Voltage Reduction VLSI calculator uses Short Channel Threshold Voltage Reduction = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))*Junction Depth)/(Oxide Capacitance per Unit Area*2*Channel Length)*((sqrt(1+(2*P-n Junction Depletion Depth with Source)/Junction Depth)-1)+(sqrt(1+(2*P-n Junction Depletion Depth with Drain)/Junction Depth)-1)) to calculate the Short Channel Threshold Voltage Reduction, The Short Channel Threshold Voltage Reduction VLSI formula is defined as a reduction in threshold voltage of MOSFET due to short channel effect. Short Channel Threshold Voltage Reduction is denoted by ΔV_T0 symbol.

How to calculate Short Channel Threshold Voltage Reduction VLSI using this online calculator? To use this online calculator for Short Channel Threshold Voltage Reduction VLSI, enter Acceptor Concentration (N_A), Surface Potential (Φ_s), Junction Depth (x_j), Oxide Capacitance per Unit Area (C_oxide), Channel Length (L), P-n Junction Depletion Depth with Source (x_dS) & P-n Junction Depletion Depth with Drain (x_dD) and hit the calculate button. Here is how the Short Channel Threshold Voltage Reduction VLSI calculation can be explained with given input values -> 0.467201 = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*1E+22*abs(2*6.86))*2E-06)/(0.000703*2*2.5E-06)*((sqrt(1+(2*3.14E-07)/2E-06)-1)+(sqrt(1+(2*5.34E-07)/2E-06)-1)).

FAQ

What is Short Channel Threshold Voltage Reduction VLSI?

The Short Channel Threshold Voltage Reduction VLSI formula is defined as a reduction in threshold voltage of MOSFET due to short channel effect and is represented as ΔV_T0 = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*N_A*abs(2*Φ_s))*x_j)/(C_oxide*2*L)*((sqrt(1+(2*x_dS)/x_j)-1)+(sqrt(1+(2*x_dD)/x_j)-1)) or Short Channel Threshold Voltage Reduction = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))*Junction Depth)/(Oxide Capacitance per Unit Area*2*Channel Length)*((sqrt(1+(2*P-n Junction Depletion Depth with Source)/Junction Depth)-1)+(sqrt(1+(2*P-n Junction Depletion Depth with Drain)/Junction Depth)-1)). Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material, Surface Potential is a key parameter in evaluating the DC property of thin-film transistors, Junction Depth is defined as the distance from the surface of a semiconductor material to the point where a significant change in the concentration of dopant atoms occurs, Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material, Channel Length refers to the physical length of the semiconductor material between the source and drain terminals within the transistor structure, P-n Junction Depletion Depth with Source is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field & P-n Junction Depletion Depth with Drain is defined as the extension of the depletion region into the semiconductor material near the drain terminal.

How to calculate Short Channel Threshold Voltage Reduction VLSI?

The Short Channel Threshold Voltage Reduction VLSI formula is defined as a reduction in threshold voltage of MOSFET due to short channel effect is calculated using Short Channel Threshold Voltage Reduction = (sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))*Junction Depth)/(Oxide Capacitance per Unit Area*2*Channel Length)*((sqrt(1+(2*P-n Junction Depletion Depth with Source)/Junction Depth)-1)+(sqrt(1+(2*P-n Junction Depletion Depth with Drain)/Junction Depth)-1)). To calculate Short Channel Threshold Voltage Reduction VLSI, you need Acceptor Concentration (N_A), Surface Potential (Φ_s), Junction Depth (x_j), Oxide Capacitance per Unit Area (C_oxide), Channel Length (L), P-n Junction Depletion Depth with Source (x_dS) & P-n Junction Depletion Depth with Drain (x_dD). With our tool, you need to enter the respective value for Acceptor Concentration, Surface Potential, Junction Depth, Oxide Capacitance per Unit Area, Channel Length, P-n Junction Depletion Depth with Source & P-n Junction Depletion Depth with Drain and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search