## Base Transport Factor given Base Width Solution

STEP 0: Pre-Calculation Summary
Formula Used
Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)
αT = 1-(1/2*(Wp/Le)^2)
This formula uses 3 Variables
Variables Used
Base Transport Factor - Base Transport Factor tells us what fraction of the electron current which is injected into the base actually makes it to collector junction.
Physical Width - (Measured in Meter) - Physical Width refers to the width of the channel region between the source and drain terminals. This channel width determines the current-carrying capability of the MOSFET.
Electron Diffusion Length - (Measured in Meter) - Electron Diffusion Length is a concept used in semiconductor physics to describe the average distance an electron travels before it undergoes scattering or recombination.
STEP 1: Convert Input(s) to Base Unit
Physical Width: 1.532 Meter --> 1.532 Meter No Conversion Required
Electron Diffusion Length: 1.2 Meter --> 1.2 Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
αT = 1-(1/2*(Wp/Le)^2) --> 1-(1/2*(1.532/1.2)^2)
Evaluating ... ...
αT = 0.185061111111111
STEP 3: Convert Result to Output's Unit
0.185061111111111 --> No Conversion Required
0.185061111111111 0.185061 <-- Base Transport Factor
(Calculation completed in 00.004 seconds)
You are here -
Home »

## Credits

Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
banuprakash has created this Calculator and 50+ more calculators!
Verified by Santhosh Yadav
Dayananda Sagar College Of Engineering (DSCE), Banglore
Santhosh Yadav has verified this Calculator and 50+ more calculators!

## <Bipolar IC Fabrication Calculators

Conductivity of N-Type
​ Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))
Ohmic Conductivity of Impurity
​ Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)
Impurity with Intrinsic Concentration
​ Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)
Breakout Voltage of Collector Emitter
​ Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

## Base Transport Factor given Base Width Formula

Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)
αT = 1-(1/2*(Wp/Le)^2)

## How does the base transport factor impact the performance of a BJT?

The base transport factor is a key parameter in BJT analysis. A higher implies a higher likelihood that electrons injected from the emitter will successfully traverse the base region and contribute to the collector current, contributing to the overall performance of the transistor.

## How to Calculate Base Transport Factor given Base Width?

Base Transport Factor given Base Width calculator uses Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2) to calculate the Base Transport Factor, The Base Transport Factor given Base Width formula is defined as tells us what fraction of the electron current which is injected into the base actually makes it to collector junction. Base Transport Factor is denoted by αT symbol.

How to calculate Base Transport Factor given Base Width using this online calculator? To use this online calculator for Base Transport Factor given Base Width, enter Physical Width (Wp) & Electron Diffusion Length (Le) and hit the calculate button. Here is how the Base Transport Factor given Base Width calculation can be explained with given input values -> 0.21875 = 1-(1/2*(1.532/1.2)^2).

### FAQ

What is Base Transport Factor given Base Width?
The Base Transport Factor given Base Width formula is defined as tells us what fraction of the electron current which is injected into the base actually makes it to collector junction and is represented as αT = 1-(1/2*(Wp/Le)^2) or Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2). Physical Width refers to the width of the channel region between the source and drain terminals. This channel width determines the current-carrying capability of the MOSFET & Electron Diffusion Length is a concept used in semiconductor physics to describe the average distance an electron travels before it undergoes scattering or recombination.
How to calculate Base Transport Factor given Base Width?
The Base Transport Factor given Base Width formula is defined as tells us what fraction of the electron current which is injected into the base actually makes it to collector junction is calculated using Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2). To calculate Base Transport Factor given Base Width, you need Physical Width (Wp) & Electron Diffusion Length (Le). With our tool, you need to enter the respective value for Physical Width & Electron Diffusion Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
Let Others Know