Base Transport Factor given Base Width Calculator

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Bipolar IC Fabrication

MOS IC Fabrication

Schmitt Trigger

✖Physical Width refers to the width of the channel region between the source and drain terminals. This channel width determines the current-carrying capability of the MOSFET.ⓘ Physical Width [W_p]			+10% -10%
✖Electron Diffusion Length is a concept used in semiconductor physics to describe the average distance an electron travels before it undergoes scattering or recombination.ⓘ Electron Diffusion Length [L_e]			+10% -10%

✖Base Transport Factor tells us what fraction of the electron current which is injected into the base actually makes it to collector junction.ⓘ Base Transport Factor given Base Width [α_T]

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Formula

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Base Transport Factor given Base Width

Formula

`"α"_{"T"} = 1-(1/2*("W"_{"p"}/"L"_{"e"})^2)`

Example

`"0.185061"=1-(1/2*("1.532m"/"1.2m")^2)`

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Base Transport Factor given Base Width Solution

STEP 0: Pre-Calculation Summary

Formula Used

Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)
α_T = 1-(1/2*(W_p/L_e)^2)
This formula uses 3 Variables

Variables Used

Base Transport Factor - Base Transport Factor tells us what fraction of the electron current which is injected into the base actually makes it to collector junction.
Physical Width - (Measured in Meter) - Physical Width refers to the width of the channel region between the source and drain terminals. This channel width determines the current-carrying capability of the MOSFET.
Electron Diffusion Length - (Measured in Meter) - Electron Diffusion Length is a concept used in semiconductor physics to describe the average distance an electron travels before it undergoes scattering or recombination.

STEP 1: Convert Input(s) to Base Unit

Physical Width: 1.532 Meter --> 1.532 Meter No Conversion Required
Electron Diffusion Length: 1.2 Meter --> 1.2 Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

α_T = 1-(1/2*(W_p/L_e)^2) --> 1-(1/2*(1.532/1.2)^2)

Evaluating ... ...

α_T = 0.185061111111111

STEP 3: Convert Result to Output's Unit

0.185061111111111 --> No Conversion Required

FINAL ANSWER

0.185061111111111 ≈ 0.185061 <-- Base Transport Factor

(Calculation completed in 00.004 seconds)

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< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Base Transport Factor given Base Width Formula

Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)
α_T = 1-(1/2*(W_p/L_e)^2)

How does the base transport factor impact the performance of a BJT?

The base transport factor is a key parameter in BJT analysis. A higher implies a higher likelihood that electrons injected from the emitter will successfully traverse the base region and contribute to the collector current, contributing to the overall performance of the transistor.

How to Calculate Base Transport Factor given Base Width?

Base Transport Factor given Base Width calculator uses Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2) to calculate the Base Transport Factor, The Base Transport Factor given Base Width formula is defined as tells us what fraction of the electron current which is injected into the base actually makes it to collector junction. Base Transport Factor is denoted by α_T symbol.

How to calculate Base Transport Factor given Base Width using this online calculator? To use this online calculator for Base Transport Factor given Base Width, enter Physical Width (W_p) & Electron Diffusion Length (L_e) and hit the calculate button. Here is how the Base Transport Factor given Base Width calculation can be explained with given input values -> 0.21875 = 1-(1/2*(1.532/1.2)^2).

FAQ

What is Base Transport Factor given Base Width?

The Base Transport Factor given Base Width formula is defined as tells us what fraction of the electron current which is injected into the base actually makes it to collector junction and is represented as α_T = 1-(1/2*(W_p/L_e)^2) or Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2). Physical Width refers to the width of the channel region between the source and drain terminals. This channel width determines the current-carrying capability of the MOSFET & Electron Diffusion Length is a concept used in semiconductor physics to describe the average distance an electron travels before it undergoes scattering or recombination.

How to calculate Base Transport Factor given Base Width?

The Base Transport Factor given Base Width formula is defined as tells us what fraction of the electron current which is injected into the base actually makes it to collector junction is calculated using Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2). To calculate Base Transport Factor given Base Width, you need Physical Width (W_p) & Electron Diffusion Length (L_e). With our tool, you need to enter the respective value for Physical Width & Electron Diffusion Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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