Breakdown Voltage of Forward Biased of IGBT Calculator

✖Net Positive Charge of an Insulated-Gate Bipolar Transistor (IGBT) is the total amount of positive charge in the device.ⓘ Net Positive Charge [N⁺]

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✖Breakdown Voltage on Safe Operating Area (SOA) of an Insulated-Gate Bipolar Transistor (IGBT) is the maximum voltage that can be applied across the device without causing it to fail.ⓘ Breakdown Voltage of Forward Biased of IGBT [BV_soa]

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Formula

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Breakdown Voltage of Forward Biased of IGBT

Formula

`"BV"_{"soa"} = (5.34*10^13)/(("N"^{"+"})^(3/4))`

Example

`"37.53628V"=(5.34*10^13)/(("16e15C")^(3/4))`

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Breakdown Voltage of Forward Biased of IGBT Solution

STEP 0: Pre-Calculation Summary

Formula Used

Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4))
BV_soa = (5.34*10^13)/((N⁺)^(3/4))
This formula uses 2 Variables

Variables Used

Breakdown Voltage on Safe Operating Area - (Measured in Volt) - Breakdown Voltage on Safe Operating Area (SOA) of an Insulated-Gate Bipolar Transistor (IGBT) is the maximum voltage that can be applied across the device without causing it to fail.
Net Positive Charge - (Measured in Coulomb) - Net Positive Charge of an Insulated-Gate Bipolar Transistor (IGBT) is the total amount of positive charge in the device.

STEP 1: Convert Input(s) to Base Unit

Net Positive Charge: 1.6E+16 Coulomb --> 1.6E+16 Coulomb No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

BV_soa = (5.34*10^13)/((N⁺)^(3/4)) --> (5.34*10^13)/((1.6E+16)^(3/4))

Evaluating ... ...

BV_soa = 37.5362834564558

STEP 3: Convert Result to Output's Unit

37.5362834564558 Volt --> No Conversion Required

FINAL ANSWER

37.5362834564558 ≈ 37.53628 Volt <-- Breakdown Voltage on Safe Operating Area

(Calculation completed in 00.004 seconds)

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< 8 IGBT Calculators

Nominal Continuous Collector Current of IGBT

Go Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter)

Voltage Drop in IGBT in ON-State

Go Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1

Saturation Voltage of IGBT

Go Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance)

IGBT Turn OFF Time

Go Turn OFF Time = Delay Time+Initial Fall Time+Final Fall Time

Maximum Power Dissipation in IGBT

Go Maximum Power Dissipation = Maximum Operating Junction/Junction to Case Angle

Input Capacitance of IGBT

Go Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance

Breakdown Voltage of Forward Biased of IGBT

Go Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4))

Emitter Current of IGBT

Go Emitter Current = Hole Current+Electronic Current

Breakdown Voltage of Forward Biased of IGBT Formula

Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4))
BV_soa = (5.34*10^13)/((N⁺)^(3/4))

What is Breakdown Voltage of Forward Biased of IGBT ?

The term "breakdown voltage" is typically associated with the reverse-biased condition of a diode or a transistor, such as an IGBT. It represents the voltage at which the device starts to conduct significant current in the reverse direction (opposite to its intended operation). This phenomenon can result in damage to the device.

How to Calculate Breakdown Voltage of Forward Biased of IGBT?

Breakdown Voltage of Forward Biased of IGBT calculator uses Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4)) to calculate the Breakdown Voltage on Safe Operating Area, Breakdown Voltage of Forward Biased of IGBT is a characteristic often associated with reverse bias conditions, specifically the breakdown voltage in the off-state. When an IGBT is forward-biased (i.e., when the gate-emitter voltage is applied to turn it on), you are not generally concerned with breakdown voltage. In this state, the IGBT is conducting current as intended. Breakdown Voltage on Safe Operating Area is denoted by BV_soa symbol.

How to calculate Breakdown Voltage of Forward Biased of IGBT using this online calculator? To use this online calculator for Breakdown Voltage of Forward Biased of IGBT, enter Net Positive Charge (N⁺) and hit the calculate button. Here is how the Breakdown Voltage of Forward Biased of IGBT calculation can be explained with given input values -> 37.53628 = (5.34*10^13)/((1.6E+16)^(3/4)).

FAQ

What is Breakdown Voltage of Forward Biased of IGBT?

Breakdown Voltage of Forward Biased of IGBT is a characteristic often associated with reverse bias conditions, specifically the breakdown voltage in the off-state. When an IGBT is forward-biased (i.e., when the gate-emitter voltage is applied to turn it on), you are not generally concerned with breakdown voltage. In this state, the IGBT is conducting current as intended and is represented as BV_soa = (5.34*10^13)/((N⁺)^(3/4)) or Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4)). Net Positive Charge of an Insulated-Gate Bipolar Transistor (IGBT) is the total amount of positive charge in the device.

How to calculate Breakdown Voltage of Forward Biased of IGBT?

Breakdown Voltage of Forward Biased of IGBT is a characteristic often associated with reverse bias conditions, specifically the breakdown voltage in the off-state. When an IGBT is forward-biased (i.e., when the gate-emitter voltage is applied to turn it on), you are not generally concerned with breakdown voltage. In this state, the IGBT is conducting current as intended is calculated using Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4)). To calculate Breakdown Voltage of Forward Biased of IGBT, you need Net Positive Charge (N⁺). With our tool, you need to enter the respective value for Net Positive Charge and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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