Saturation Voltage of IGBT Calculator

✖Base Emitter Voltage of PNP TransistorIGBT. An IGBT is a hybrid device that combines the advantages of a MOSFET and a BJT.ⓘ Base Emitter Voltage of PNP Transistor [V_B-E(pnp)]			+10% -10%
✖Drain Current is the current that flow through the drain junction of the MOSFET and IGBT.ⓘ Drain Current [I_d]			+10% -10%
✖Conductivity resistance is the resistance of an insulated-gate bipolar transistor (IGBT) when it is turned on and conducting current.ⓘ Conductivity Resistance [R_s]			+10% -10%
✖N Channel Resistance of an IGBT is the resistance of the semiconductor material in the device when the IGBT is turned on.ⓘ N Channel Resistance [R_ch]			+10% -10%

✖Collector to Emitter Saturation Voltage of an insulated-gate bipolar transistor (IGBT) is the voltage drop across the IGBT when it is turned on and conducting current.ⓘ Saturation Voltage of IGBT [V_c-e(sat)]

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Formula

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Saturation Voltage of IGBT

Formula

`"V"_{"c-e(sat)"} = "V"_{"B-E(pnp)"}+"I"_{"d"}*("R"_{"s"}+"R"_{"ch"})`

Example

`"1222.25V"="2.15V"+"105mA"*("1.03kΩ"+"10.59kΩ")`

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Saturation Voltage of IGBT Solution

STEP 0: Pre-Calculation Summary

Formula Used

Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance)
V_c-e(sat) = V_B-E(pnp)+I_d*(R_s+R_ch)
This formula uses 5 Variables

Variables Used

Collector to Emitter Saturation Voltage - (Measured in Volt) - Collector to Emitter Saturation Voltage of an insulated-gate bipolar transistor (IGBT) is the voltage drop across the IGBT when it is turned on and conducting current.
Base Emitter Voltage of PNP Transistor - (Measured in Volt) - Base Emitter Voltage of PNP TransistorIGBT. An IGBT is a hybrid device that combines the advantages of a MOSFET and a BJT.
Drain Current - (Measured in Ampere) - Drain Current is the current that flow through the drain junction of the MOSFET and IGBT.
Conductivity Resistance - (Measured in Ohm) - Conductivity resistance is the resistance of an insulated-gate bipolar transistor (IGBT) when it is turned on and conducting current.
N Channel Resistance - (Measured in Ohm) - N Channel Resistance of an IGBT is the resistance of the semiconductor material in the device when the IGBT is turned on.

STEP 1: Convert Input(s) to Base Unit

Base Emitter Voltage of PNP Transistor: 2.15 Volt --> 2.15 Volt No Conversion Required
Drain Current: 105 Milliampere --> 0.105 Ampere (Check conversion here)
Conductivity Resistance: 1.03 Kilohm --> 1030 Ohm (Check conversion here)
N Channel Resistance: 10.59 Kilohm --> 10590 Ohm (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_c-e(sat) = V_B-E(pnp)+I_d*(R_s+R_ch) --> 2.15+0.105*(1030+10590)

Evaluating ... ...

V_c-e(sat) = 1222.25

STEP 3: Convert Result to Output's Unit

1222.25 Volt --> No Conversion Required

FINAL ANSWER

1222.25 Volt <-- Collector to Emitter Saturation Voltage

(Calculation completed in 00.004 seconds)

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Created by Mohamed Fazil V

Acharya institute of technology (AIT), Bengaluru

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< 8 IGBT Calculators

Nominal Continuous Collector Current of IGBT

Go Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter)

Voltage Drop in IGBT in ON-State

Go Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1

Saturation Voltage of IGBT

Go Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance)

IGBT Turn OFF Time

Go Turn OFF Time = Delay Time+Initial Fall Time+Final Fall Time

Maximum Power Dissipation in IGBT

Go Maximum Power Dissipation = Maximum Operating Junction/Junction to Case Angle

Input Capacitance of IGBT

Go Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance

Breakdown Voltage of Forward Biased of IGBT

Go Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4))

Emitter Current of IGBT

Go Emitter Current = Hole Current+Electronic Current

Saturation Voltage of IGBT Formula

Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance)
V_c-e(sat) = V_B-E(pnp)+I_d*(R_s+R_ch)

What is Saturation Voltage of IGBT ?

The saturation voltage of an IGBT (Insulated Gate Bipolar Transistor) is the voltage drop across the device when it is fully turned on and conducting current. It is a critical parameter because it determines how efficiently the IGBT can pass current without excessive power dissipation. When the IGBT is in the "on" state, it behaves like a low-resistance switch, and there is a voltage drop across it. This voltage drop is the saturation voltage. It represents the minimum voltage required to keep the IGBT in full conduction, and it depends on the specific IGBT model, current flowing through the device, and other factors such as temperature.

How to Calculate Saturation Voltage of IGBT?

Saturation Voltage of IGBT calculator uses Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance) to calculate the Collector to Emitter Saturation Voltage, Saturation Voltage of IGBT is the voltage drop across the device when it is in the "on" or conducting state. This voltage drop occurs due to the IGBT's inherent characteristics and is typically lower than the voltage drop across a standard bipolar junction transistor (BJT). The saturation voltage of an IGBT is influenced by several factors, including the IGBT's current rating, temperature, and the specific model or manufacturer. Collector to Emitter Saturation Voltage is denoted by V_c-e(sat) symbol.

How to calculate Saturation Voltage of IGBT using this online calculator? To use this online calculator for Saturation Voltage of IGBT, enter Base Emitter Voltage of PNP Transistor (V_B-E(pnp)), Drain Current (I_d), Conductivity Resistance (R_s) & N Channel Resistance (R_ch) and hit the calculate button. Here is how the Saturation Voltage of IGBT calculation can be explained with given input values -> 1.1E+6 = 2.15+105*(1.03+10590).

FAQ

What is Saturation Voltage of IGBT?

Saturation Voltage of IGBT is the voltage drop across the device when it is in the "on" or conducting state. This voltage drop occurs due to the IGBT's inherent characteristics and is typically lower than the voltage drop across a standard bipolar junction transistor (BJT). The saturation voltage of an IGBT is influenced by several factors, including the IGBT's current rating, temperature, and the specific model or manufacturer and is represented as V_c-e(sat) = V_B-E(pnp)+I_d*(R_s+R_ch) or Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance). Base Emitter Voltage of PNP TransistorIGBT. An IGBT is a hybrid device that combines the advantages of a MOSFET and a BJT, Drain Current is the current that flow through the drain junction of the MOSFET and IGBT, Conductivity resistance is the resistance of an insulated-gate bipolar transistor (IGBT) when it is turned on and conducting current & N Channel Resistance of an IGBT is the resistance of the semiconductor material in the device when the IGBT is turned on.

How to calculate Saturation Voltage of IGBT?

Saturation Voltage of IGBT is the voltage drop across the device when it is in the "on" or conducting state. This voltage drop occurs due to the IGBT's inherent characteristics and is typically lower than the voltage drop across a standard bipolar junction transistor (BJT). The saturation voltage of an IGBT is influenced by several factors, including the IGBT's current rating, temperature, and the specific model or manufacturer is calculated using Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance). To calculate Saturation Voltage of IGBT, you need Base Emitter Voltage of PNP Transistor (V_B-E(pnp)), Drain Current (I_d), Conductivity Resistance (R_s) & N Channel Resistance (R_ch). With our tool, you need to enter the respective value for Base Emitter Voltage of PNP Transistor, Drain Current, Conductivity Resistance & N Channel Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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