Average Power Dissipated over Period of Time Calculator

✖Total Time Taken is the total time taken by the body to cover that space.ⓘ Total Time Taken [t_total]			+10% -10%
✖Voltage represents the electrical pressure that pushes electric current through a conductor.ⓘ Voltage [V_t]			+10% -10%
✖Current signifies the rate of flow of electric charge through a conductor.ⓘ Current [i_t]			+10% -10%
✖Total Time Taken is the total time taken by the body to cover that space.ⓘ Total Time Taken [t_total]			+10% -10%

✖Average Power refers to the rate at which energy is transferred or work is done, on average, over a certain period of time.ⓘ Average Power Dissipated over Period of Time [P_avg]

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Formula

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Average Power Dissipated over Period of Time

Formula

`"P"_{"avg"} = (1/"t"_{"total"})*int("V"_{"t"}*"i"_{"t"},x,0,"t"_{"total"})`

Example

`"18.8215W"=(1/"80s")*int("4.565V"*"4.123A",x,0,"80s")`

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Average Power Dissipated over Period of Time Solution

STEP 0: Pre-Calculation Summary

Formula Used

Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)
P_avg = (1/t_total)*int(V_t*i_t,x,0,t_total)
This formula uses 1 Functions, 5 Variables

Functions Used

int - The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis., int(expr, arg, from, to)

Variables Used

Average Power - (Measured in Watt) - Average Power refers to the rate at which energy is transferred or work is done, on average, over a certain period of time.
Total Time Taken - (Measured in Second) - Total Time Taken is the total time taken by the body to cover that space.
Voltage - (Measured in Volt) - Voltage represents the electrical pressure that pushes electric current through a conductor.
Current - (Measured in Ampere) - Current signifies the rate of flow of electric charge through a conductor.
Total Time Taken - (Measured in Second) - Total Time Taken is the total time taken by the body to cover that space.

STEP 1: Convert Input(s) to Base Unit

Total Time Taken: 80 Second --> 80 Second No Conversion Required
Voltage: 4.565 Volt --> 4.565 Volt No Conversion Required
Current: 4.123 Ampere --> 4.123 Ampere No Conversion Required
Total Time Taken: 80 Second --> 80 Second No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

P_avg = (1/t_total)*int(V_t*i_t,x,0,t_total) --> (1/80)*int(4.565*4.123,x,0,80)

Evaluating ... ...

P_avg = 18.821495

STEP 3: Convert Result to Output's Unit

18.821495 Watt --> No Conversion Required

FINAL ANSWER

18.821495 ≈ 18.8215 Watt <-- Average Power

(Calculation completed in 00.004 seconds)

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Created by Vignesh Naidu

Vellore Institute of Technology (VIT), Vellore,Tamil Nadu

Vignesh Naidu has created this Calculator and 25+ more calculators!

Verified by Dipanjona Mallick

Heritage Insitute of technology (HITK), Kolkata

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< 21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Pull down Current in Linear Region

Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))

Node Voltage at Given Instance

Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)

Pull down Current in Saturation Region

Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)

Saturation Time

Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)

Drain Current Flowing through MOS Transistor

Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)

Time Delay when NMOS Operates in Linear Region

Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)

Depletion Region Charge Density

Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))

Depth of Depletion Region Associated with Drain

Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))

Drain Current in Saturation Region in MOS Transistor

Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)

Fermi Potential for P Type

Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Maximum Depletion Depth

Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))

Fermi Potential for N Type

Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)

Equivalent Large Signal Capacitance

Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)

Built in Potential at Depletion Region

Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))

Depth of Depletion Region Associated with Source

Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))

Substrate Bias Coefficient

Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance

Average Power Dissipated over Period of Time

Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)

Equivalent Large Signal Junction Capacitance

Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Work Function in MOSFET

Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)

Zero Bias Sidewall Junction Capacitance per Unit Length

Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Average Power Dissipated over Period of Time Formula

Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)
P_avg = (1/t_total)*int(V_t*i_t,x,0,t_total)

What are the Applications of Average Power Dissipated over Period of Time ?

1. Component Selection: By calculating the average power dissipated in a component (like a resistor or transistor) within a circuit, engineers can choose components with appropriate power ratings. This ensures the components can handle the heat generated without overheating or failing.

2. Circuit Efficiency: Average power dissipation helps analyze how efficiently a circuit operates. Lower average power dissipation indicates less energy wasted as heat, leading to a more efficient design.

How to Calculate Average Power Dissipated over Period of Time?

Average Power Dissipated over Period of Time calculator uses Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken) to calculate the Average Power, The Average Power Dissipated over Period of Time formula refers to the rate at which energy is transferred or work is done, on average, over a certain period of time. In simpler terms, it's the amount of energy used per unit of time. Average Power is denoted by P_avg symbol.

How to calculate Average Power Dissipated over Period of Time using this online calculator? To use this online calculator for Average Power Dissipated over Period of Time, enter Total Time Taken (t_total), Voltage (V_t), Current (i_t) & Total Time Taken (t_total) and hit the calculate button. Here is how the Average Power Dissipated over Period of Time calculation can be explained with given input values -> 18.8215 = (1/80)*int(4.565*4.123,x,0,80).

FAQ

What is Average Power Dissipated over Period of Time?

The Average Power Dissipated over Period of Time formula refers to the rate at which energy is transferred or work is done, on average, over a certain period of time. In simpler terms, it's the amount of energy used per unit of time and is represented as P_avg = (1/t_total)*int(V_t*i_t,x,0,t_total) or Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken). Total Time Taken is the total time taken by the body to cover that space, Voltage represents the electrical pressure that pushes electric current through a conductor, Current signifies the rate of flow of electric charge through a conductor & Total Time Taken is the total time taken by the body to cover that space.

How to calculate Average Power Dissipated over Period of Time?

The Average Power Dissipated over Period of Time formula refers to the rate at which energy is transferred or work is done, on average, over a certain period of time. In simpler terms, it's the amount of energy used per unit of time is calculated using Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken). To calculate Average Power Dissipated over Period of Time, you need Total Time Taken (t_total), Voltage (V_t), Current (i_t) & Total Time Taken (t_total). With our tool, you need to enter the respective value for Total Time Taken, Voltage, Current & Total Time Taken and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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