Drift Current Density due to Holes Solution

STEP 0: Pre-Calculation Summary
Formula Used
Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
Jp = [Charge-e]*p*μp*Ei
This formula uses 1 Constants, 4 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19 Coulomb
Variables Used
Drift Current Density due to holes - (Measured in Ampere per Square Meter) - Drift Current Density due to holes is the flow of holes in a semiconductor due to an electric field.
Hole Concentration - (Measured in Electrons per Cubic Meter) - Hole Concentration refers to the number of electrons per unit volume in a material.
Hole Mobility - (Measured in Square Meter per Volt per Second) - Hole Mobility represents the ability of these charge carriers to move in response to an electric field.
Electric Field Intensity - (Measured in Volt per Meter) - Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.
STEP 1: Convert Input(s) to Base Unit
Hole Concentration: 8.2 Electrons per Cubic Meter --> 8.2 Electrons per Cubic Meter No Conversion Required
Hole Mobility: 400 Square Meter per Volt per Second --> 400 Square Meter per Volt per Second No Conversion Required
Electric Field Intensity: 11.2 Volt per Meter --> 11.2 Volt per Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Jp = [Charge-e]*p*μp*Ei --> [Charge-e]*8.2*400*11.2
Evaluating ... ...
Jp = 5.885756031232E-15
STEP 3: Convert Result to Output's Unit
5.885756031232E-15 Ampere per Square Meter --> No Conversion Required
FINAL ANSWER
5.885756031232E-15 5.9E-15 Ampere per Square Meter <-- Drift Current Density due to holes
(Calculation completed in 00.004 seconds)

Credits

Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
banuprakash has created this Calculator and 25+ more calculators!
Verified by Santhosh Yadav
Dayananda Sagar College Of Engineering (DSCE), Banglore
Santhosh Yadav has verified this Calculator and 50+ more calculators!

15 MOS IC Fabrication Calculators

Switching Point Voltage
Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))
Drain Current of MOSFET at Saturation Region
Go Drain Current = 0.5*Electron Mobility*Oxide Capacitance*Transistor's Width*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)/Transistor's Length
Body Effect in MOSFET
Go Threshold Voltage = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to the Body)-sqrt(2*Bulk Fermi Potential))
Donor Dopant Concentration
Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance per Unit Area)
Channel Resistance
Go Channel Resistance = Transistor's Length*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2/(Electron Mobility*Oxide Capacitance*Transistor's Width*2)
Acceptor Dopant Concentration
Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance per Unit Area)
Maximum Dopant Concentration
Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))
Propagation Time
Go Propagation Time = 0.7*Number of Pass Transistors*(Number of Pass Transistors+1)/2*Resistance in MOSFET*Load Capaacitance
Drift Current Density due to Free Electrons
Go Drift Current Density due to electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity
MOSFET Unity-Gain Frequency
Go Unity Gain Frequency in MOSFET = 1/(2*pi)*MOSFET Transconductance/(Gate Source Capacitance+Gate Drain Capacitance)
Drift Current Density due to Holes
Go Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
Critical Dimension
Go Critical Dimension = Process Dependent Constant*Wavelength of Light/Numerical Aperture
Depth of Focus
Go Depth of Focus = Proportionality Factor*Wavelength of Light/(Numerical Aperture^2)
Equivalent Oxide Thickness
Go Equivalent Oxide Thickness = Thickness of the Material*(3.9/Dielectric Constant of Material)
Die Per Wafer
Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Drift Current Density due to Holes Formula

Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
Jp = [Charge-e]*p*μp*Ei

Why is drift current important in semiconductor devices?

Drift current contributes to the overall current in semiconductor devices, affecting their electrical behavior. Understanding drift current is crucial for designing and analyzing electronic devices like transistors.

How to Calculate Drift Current Density due to Holes?

Drift Current Density due to Holes calculator uses Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity to calculate the Drift Current Density due to holes, The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor. Drift Current Density due to holes is denoted by Jp symbol.

How to calculate Drift Current Density due to Holes using this online calculator? To use this online calculator for Drift Current Density due to Holes, enter Hole Concentration (p), Hole Mobility p) & Electric Field Intensity (Ei) and hit the calculate button. Here is how the Drift Current Density due to Holes calculation can be explained with given input values -> 5.9E-15 = [Charge-e]*8.2*400*11.2.

FAQ

What is Drift Current Density due to Holes?
The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor and is represented as Jp = [Charge-e]*p*μp*Ei or Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity. Hole Concentration refers to the number of electrons per unit volume in a material, Hole Mobility represents the ability of these charge carriers to move in response to an electric field & Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.
How to calculate Drift Current Density due to Holes?
The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor is calculated using Drift Current Density due to holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity. To calculate Drift Current Density due to Holes, you need Hole Concentration (p), Hole Mobility p) & Electric Field Intensity (Ei). With our tool, you need to enter the respective value for Hole Concentration, Hole Mobility & Electric Field Intensity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
Let Others Know
Facebook
Twitter
Reddit
LinkedIn
Email
WhatsApp
Copied!