Drift Current Density due to Holes Calculator

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MOS IC Fabrication

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✖Hole Concentration refers to the number of electrons per unit volume in a material.ⓘ Hole Concentration [p]			+10% -10%
✖Hole Mobility represents the ability of these charge carriers to move in response to an electric field.ⓘ Hole Mobility [μ_p]			+10% -10%
✖Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.ⓘ Electric Field Intensity [E_i]			+10% -10%

✖Drift Current Density due to Holes refers to the movement of charge carriers (holes) in a semiconductor material under the influence of an electric field.ⓘ Drift Current Density due to Holes [J_p]

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Formula

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Drift Current Density due to Holes

Formula

`"J"_{"p"} = "[Charge-e]"*"p"*"μ"_{"p"}*"E"_{"i"}`

Example

`"0.071778A/mm²"="[Charge-e]"*"1E^20electrons/m³"*"400m²/V*s"*"11.2V/m"`

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Drift Current Density due to Holes Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
J_p = [Charge-e]*p*μ_p*E_i
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Drift Current Density due to Holes - (Measured in Ampere per Square Meter) - Drift Current Density due to Holes refers to the movement of charge carriers (holes) in a semiconductor material under the influence of an electric field.
Hole Concentration - (Measured in Electrons per Cubic Meter) - Hole Concentration refers to the number of electrons per unit volume in a material.
Hole Mobility - (Measured in Square Meter per Volt per Second) - Hole Mobility represents the ability of these charge carriers to move in response to an electric field.
Electric Field Intensity - (Measured in Volt per Meter) - Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.

STEP 1: Convert Input(s) to Base Unit

Hole Concentration: 1E+20 Electrons per Cubic Meter --> 1E+20 Electrons per Cubic Meter No Conversion Required
Hole Mobility: 400 Square Meter per Volt per Second --> 400 Square Meter per Volt per Second No Conversion Required
Electric Field Intensity: 11.2 Volt per Meter --> 11.2 Volt per Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

J_p = [Charge-e]*p*μ_p*E_i --> [Charge-e]*1E+20*400*11.2

Evaluating ... ...

J_p = 71777.512576

STEP 3: Convert Result to Output's Unit

71777.512576 Ampere per Square Meter -->0.071777512576 Ampere per Square Millimeter (Check conversion here)

FINAL ANSWER

0.071777512576 ≈ 0.071778 Ampere per Square Millimeter <-- Drift Current Density due to Holes

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Drift Current Density due to Holes Formula

Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
J_p = [Charge-e]*p*μ_p*E_i

Why is drift current important in semiconductor devices?

Drift current contributes to the overall current in semiconductor devices, affecting their electrical behavior. Understanding drift current is crucial for designing and analyzing electronic devices like transistors.

How to Calculate Drift Current Density due to Holes?

Drift Current Density due to Holes calculator uses Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity to calculate the Drift Current Density due to Holes, The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor. Drift Current Density due to Holes is denoted by J_p symbol.

How to calculate Drift Current Density due to Holes using this online calculator? To use this online calculator for Drift Current Density due to Holes, enter Hole Concentration (p), Hole Mobility (μ_p) & Electric Field Intensity (E_i) and hit the calculate button. Here is how the Drift Current Density due to Holes calculation can be explained with given input values -> 7.2E-8 = [Charge-e]*1E+20*400*11.2.

FAQ

What is Drift Current Density due to Holes?

The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor and is represented as J_p = [Charge-e]*p*μ_p*E_i or Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity. Hole Concentration refers to the number of electrons per unit volume in a material, Hole Mobility represents the ability of these charge carriers to move in response to an electric field & Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.

How to calculate Drift Current Density due to Holes?

The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor is calculated using Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity. To calculate Drift Current Density due to Holes, you need Hole Concentration (p), Hole Mobility (μ_p) & Electric Field Intensity (E_i). With our tool, you need to enter the respective value for Hole Concentration, Hole Mobility & Electric Field Intensity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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