Propagation Time Calculator

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MOS IC Fabrication

Bipolar IC Fabrication

Schmitt Trigger

✖Number of Pass Transistors is number of transistors used to transfer signals from one part of the circuit to another.ⓘ Number of Pass Transistors [N]			+10% -10%
✖Resistance in MOSFET refers to the opposition to the flow of current in the circuit.ⓘ Resistance in MOSFET [R_m]			+10% -10%
✖Load Capacitance refers to the total capacitance that a device sees at its output, typically due to the capacitance of connected loads and the traces on a printed circuit board (PCB).ⓘ Load Capacitance [C_l]			+10% -10%

✖Propagation Time refers to the time it takes for a signal to propagate through the transistor from the input to the output.ⓘ Propagation Time [T_p]

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Formula

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Propagation Time

Formula

`"T"_{"p"} = 0.7*"N"*(("N"+1)/2)*"R"_{"m"}*"C"_{"l"}`

Example

`"0.778203s"=0.7*"13"*(("13"+1)/2)*"542Ω"*"22.54μF"`

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Propagation Time Solution

STEP 0: Pre-Calculation Summary

Formula Used

Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance
T_p = 0.7*N*((N+1)/2)*R_m*C_l
This formula uses 4 Variables

Variables Used

Propagation Time - (Measured in Second) - Propagation Time refers to the time it takes for a signal to propagate through the transistor from the input to the output.
Number of Pass Transistors - Number of Pass Transistors is number of transistors used to transfer signals from one part of the circuit to another.
Resistance in MOSFET - (Measured in Ohm) - Resistance in MOSFET refers to the opposition to the flow of current in the circuit.
Load Capacitance - (Measured in Farad) - Load Capacitance refers to the total capacitance that a device sees at its output, typically due to the capacitance of connected loads and the traces on a printed circuit board (PCB).

STEP 1: Convert Input(s) to Base Unit

Number of Pass Transistors: 13 --> No Conversion Required
Resistance in MOSFET: 542 Ohm --> 542 Ohm No Conversion Required
Load Capacitance: 22.54 Microfarad --> 2.254E-05 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

T_p = 0.7*N*((N+1)/2)*R_m*C_l --> 0.7*13*((13+1)/2)*542*2.254E-05

Evaluating ... ...

T_p = 0.778202516

STEP 3: Convert Result to Output's Unit

0.778202516 Second --> No Conversion Required

FINAL ANSWER

0.778202516 ≈ 0.778203 Second <-- Propagation Time

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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< 15 MOS IC Fabrication Calculators

Switching Point Voltage

Go Switching Point Voltage = (Supply Voltage+PMOS Threshold Voltage+NMOS Threshold Voltage*sqrt(NMOS Transistor Gain/PMOS Transistor Gain))/(1+sqrt(NMOS Transistor Gain/PMOS Transistor Gain))

Body Effect in MOSFET

Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Donor Dopant Concentration

Go Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)

Acceptor Dopant Concentration

Go Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance)

Drain Current of MOSFET at Saturation Region

Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Maximum Dopant Concentration

Go Maximum Dopant Concentration = Reference Concentration*exp(-Activation Energy for Solid Solubility/([BoltZ]*Absolute Temperature))

Propagation Time

Go Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance

Drift Current Density due to Free Electrons

Go Drift Current Density due to Electrons = [Charge-e]*Electron Concentration*Electron Mobility*Electric Field Intensity

Drift Current Density due to Holes

Go Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity

Channel Resistance

Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Critical Dimension

Go Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture

Depth of Focus

Go Depth of Focus = Proportionality Factor*Wavelength in Photolithography/(Numerical Aperture^2)

Die Per Wafer

Go Die Per Wafer = (pi*Wafer Diameter^2)/(4*Size of Each Die)

Equivalent Oxide Thickness

Go Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material)

Propagation Time Formula

Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance
T_p = 0.7*N*((N+1)/2)*R_m*C_l

What are the main components of propagation time in MOSFETs?

The propagation time in MOSFETs can be broken down into various components, including the input delay, internal delay within the transistor, and the output delay. These components collectively contribute to the overall time it takes for a signal to traverse the MOSFET.

How to Calculate Propagation Time?

Propagation Time calculator uses Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance to calculate the Propagation Time, The Propagation Time refers to the time it takes for a signal to propagate through the transistor from the input to the output. Propagation Time is denoted by T_p symbol.

How to calculate Propagation Time using this online calculator? To use this online calculator for Propagation Time, enter Number of Pass Transistors (N), Resistance in MOSFET (R_m) & Load Capacitance (C_l) and hit the calculate button. Here is how the Propagation Time calculation can be explained with given input values -> 0.778203 = 0.7*13*((13+1)/2)*542*2.254E-05.

FAQ

What is Propagation Time?

The Propagation Time refers to the time it takes for a signal to propagate through the transistor from the input to the output and is represented as T_p = 0.7*N*((N+1)/2)*R_m*C_l or Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance. Number of Pass Transistors is number of transistors used to transfer signals from one part of the circuit to another, Resistance in MOSFET refers to the opposition to the flow of current in the circuit & Load Capacitance refers to the total capacitance that a device sees at its output, typically due to the capacitance of connected loads and the traces on a printed circuit board (PCB).

How to calculate Propagation Time?

The Propagation Time refers to the time it takes for a signal to propagate through the transistor from the input to the output is calculated using Propagation Time = 0.7*Number of Pass Transistors*((Number of Pass Transistors+1)/2)*Resistance in MOSFET*Load Capacitance. To calculate Propagation Time, you need Number of Pass Transistors (N), Resistance in MOSFET (R_m) & Load Capacitance (C_l). With our tool, you need to enter the respective value for Number of Pass Transistors, Resistance in MOSFET & Load Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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